This thesis presents rubidium packaging methods for integration using anti-resonant reflecting optical waveguides (ARROWs) on a planar chip. The atomic vapor ARROW confines light through rubidium vapor, increases the light-vapor interaction length, decreases the size of the atomic cell to chip scales, and opens up possibilities for waveguide systems on chips for additional optoelectronic devices. Rubidium vapor packaging for long-life times are essential for realizing feasibly useful devices. Considerations of outgassing, leaking and chemical compatibilities of materials in rubidium vapor cells lead to an all-metal design. The effect of these characteristics on the rubidium D2 line spectra is considered.

Orientador: Luis Eduardo Evangelista de Araujo / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-08T01:12:06Z (GMT). No. of bitstreams: 1 Carvalho_SilvaniaAlvesde_M.pdf: 47841969 bytes, checksum: 80b56cd870f97d9119c7f4935d7685ad (MD5) Previous issue date: 2006 / Resumo: Neste trabalho estudamos o fenômeno de transparência induzida eletromag-neticamente (EIT) em sistemas de três níveis nas configurações lambda, V e cascata. Nestes sistemas, a transparência de um feixe de prova é induzida por um feixe de acoplamento mais forte. Uma comparação sistemática da largura do sinal de EIT e da dispersão no meio para os três sistemas, usando diferentes valores relativos de comprimento de onda dos dois feixes, é apresentada para meios atômicos alargados inomogeneamente. A dependência da EIT com o ângulo entre os feixes de prova e acoplamento é também investigada. Observamos que, embora os sinais de EIT mais estreitos e profundos, e uma maior inclinação da curva de dispersão sejam obtidos para o sistema lambda, o sistema V é o mais robusto com relação ao ângulo entre os feixes e ao comprimento de onda relativo dos feixes. Por fim, apresentamos os resultados obtidos no experimento realizado em um sistema de 3 níveis na configuração cascata levando em conta os níveis 1S01 1P01 e 1D2em átomos de cálcio, descrevendo o uso inédito da técnica de deteção optogalvânica na observação de EIT. Neste experimento observamos EIT em uma lâmpada de catodo oco de Ca com vapor de fundo de Kr que nos forneceu até 76% de cancelamento da absorção de um laser em 423 nm induzido por um laser amarelo 586 nm forte contrapropagante. EIT neste mesmo sistema cascata considerando uma geometria copropagante dos feixes de laser foi observada / Abstract: In this work we studied the phenomenon of electromagnetically induced trans-parency (EIT) in three level systems in the L, Vee and cascade configurations. In these systems, the transparency of a probe beam is induced by a strong coupling beam. A systematic comparison of the EIT signal width and the dispersion in the medium for the three systems for different relative values of wavelength of the two beams is presented for inhomogeneously Doppler-broadened medium. EIT dependence on the angle between the probe and coupling beams is also investigated. We observe that although the narrowest and deepest EIT signal, and the greatest slope of the dispersion curve are obtained for the L system, the V system is the more robust relative to the angle between the beams and to the relative wavelength of the beams. Finally, we present the results obtained in an experiment in a three level cascade system considering the levels 1S01 1P01 and 1D2 in Ca atoms. We describe, for the first time to our knowledge, the use of the optogalvanic detection technique for observing EIT. In this experiment we observed EIT in a Ca hollow cathode lamp with Kr buffer gas, obtaining up to 76% cancellation of absorption of a blue laser beam (423 nm) induced by a strong and counterpropagating yellow beam (586 nm). EIT in a cascade system considering a copropagating geometry of the laser beams was observed. / Mestrado / Física Atômica e Molecular / Mestre em Física

Light-matter interactions are fundamentally based on the quantum mechanical principles that govern photons, electrons and other fundamental particles. One very interesting phenomenon within all of light-matter interactions is Electromagnetically Induced Transparency(EIT). This phenomenon causes an otherwise absorbing atomic transition to stop absorbing through quantum mechanical interference of probability wave functions. Corresponding to that change in absorption, will be a sudden, large change in the index of refraction. This change in the index of refraction leads to another phenomenon in which the group velocity of light can be slowed down dramatically. In the past, many researchers have been able to achieve both EIT and slow light in bulk atomic vapor cells. In an attempt to miniaturize this process and we have been using a platform of Anti Resonant Reflecting Optical Waveguides (ARROW) devices to both guide light and contain the interacting matter. However, the platform creates a whole new set of challenges when integrating rubidium vapor into the hollow waveguides as rubidium is highly reactive and it is difficult to maintain an inert atmosphere for the rubidium vapor. A variety of sealing methods were attempted and their appropriateness and effectiveness was analyzed. Among these sealing methods were PMMA, Crystal Wax, Active Solder, Epoxy, and Indium Solder. PMMA, Crystal Wax and Active Solder each had major faults in one or more of the sealing requirements. We have used a high temperature epoxy with relative success to contain the rubidium vapor. However, the epoxy degrades very quickly at the high temperatures required for EIT testing. Indium solder is the most recent application method. It has high potential although we have yet to fully test its effectiveness. We were able to successfully demonstrate the first EIT and slow light on a chip with our ARROW atomic vapor cell system. In the slow light experiment, we were able to slow light down to 2.5x105m/s. The group velocity of light decreased from the standard 3x108m/s by a factor of 1200. We believe we can achieve even lower group velocities using this same platform through further experimentation.

The author presents the successful development of an on-chip, monolithic, integrated rubidium vapor-cell. These vapor-cells integrate ridge waveguide techniques with hollow-core waveguiding technology known as Anti-Resonant Reflecting Optical Waveguides (ARROWs). These devices are manufactured on-site in BYU's Integrated Microelectronic Laboratory (IML) using common silicon wafer microfabrication techniques. The ARROW platform fabrication is outlined, but the bulk of the dissertation focuses on novel packaging techniques that allow for the successful introduction and sealing of rubidium vapor into these micro-sized vapor-cells. The unique geometries and materials utilized in the ARROW platform render common vapor-cell sealing techniques unusable. The development of three generations of successful vapor-cells is chronicled. The sealing techniques represented in these three generations of vapor-cells include high-temperature epoxy seals, cold-weld copper crimping, variable pressure vacuum capabilities, indium solder seals, and electroplated passivation coatings. The performance of these seals are quantified using accelerated lifetime tests combined with optical spectroscopy. Finally, the successful probing of the rubidium absorption spectrum, electromagnetically induced transparency, and slow light on the ARROW-based vapor-cell platform is reported.

No description available.

Made available in DSpace on 2015-05-14T12:14:09Z (GMT). No. of bitstreams: 1 arquivototal.pdf: 5247280 bytes, checksum: a825d4cf1e9d423d3daa9794ddd2962e (MD5) Previous issue date: 2013-07-23 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - CAPES / The response of a material to an incident radiation can be described in terms of the susceptibility of the medium. In an atomic vapor, this susceptibility strongly depends on the frequency of the radiation and can vary over several orders of magnitude near the resonance. When a material is illuminated by light whose electric field is intense, the Kerr effect may become significant, showing a linear variation of the refractive index as a function of the intensity of the laser beam. Several techniques allow the measurement of this nonlinear effect. One of the simplest and most accurate is the z-scan technique. It consists in moving the medium to be probed along the axis of a focused laser beam. The transmittance through an aperture is measured as a function of the cell position and the obtained curve allows one to determine the nonlinear refractive index (n2) of the material. In this work, we investigate the nonlinear refractive index of a vapor of cesium atoms. We used the z-scan technique for various detunings around the Cs D2 transition (wavelength at 852 nm). To monitor the frequency of the laser, we simultaneously used an auxiliary saturated absorption setup and a Fabry-Perot analyzer. Through simple relationships between n2 and the aperture transmittance, we obtained a value for n2 as a function of the laser detuning. A theoretical model was developed to be compared to our experimental results. We used the density matrix formalism to calculate n2, taking into account the velocity distribution of the atoms in the calculation of the matrix elements. We started by treating the atoms as two-level systems, which allows us to test different limits of velocity integration. We then carried out a more realistic model for the D2 line of Cs, considering one fundamental level and three excited levels. We showed that for each hyperfine transition, the third-order fundamental-excited coherence depends on the population of the excited states as well as on the coherence created between the excited levels. To our knowledge, our experimental results are the first measurements of n2 for a cesium vapor, using the z-scan technique. The measured values of n2 are consistent with our theoretical calculations. / A resposta de um meio material à radiação incidente pode ser descrita em termos da susceptibilidade ótica desse meio. Em vapores atômicos, essa susceptibilidade depende fortemente da freqüência da radiação e pode variar, em torno da ressonância, por várias ordens de grandeza. Quando um material é iluminado por um feixe de luz cujo campo elétrico é muito intenso, evidencia-se o efeito Kerr, ou seja, o próprio índice de refração do material varia linearmente com a intensidade do feixe laser. Para medir esse efeito não linear da polarização do material, existem varias técnicas na literatura. Uma das mais simples e precisa é a varredura z (z-scan). O z-scan consiste em deslocar o meio a ser estudado ao longo do eixo de um feixe laser focalizado. Mede-se então a transmitância através de uma abertura, em função da posição da célula. A partir dessa curva de transmitância, é possível determinar o índice de refração não linear do material. Neste trabalho, investigamos a dependência espectral do índice de refração não linear do vapor atômico de césio. Realizamos experimentos com a técnica z-scan para várias dessintonizações na linha D2 (comprimento de onda de 852 nm). O monitoramento da freqüência do laser é feito através de uma montagem auxiliar de absorção saturada e de uma cavidade Fabry-Pérot. Utilizando relações simples entre n2 e a transmitância na abertura, obtivemos um valor de n2 para cada dessintonização. Para interpretar os resultados experimentais, usamos o formalismo de matriz densidade para calcular teoricamente o n2. No cálculo dos elementos da matriz densidade, deve-se levar em consideração a distribuição de velocidades dos átomos. Iniciamos nosso modelo tratando os átomos como sistemas de dois níveis, com o objetivo de compreender os diferentes limites da integração em velocidade. Em seguida passamos para um modelo mais realista para a linha D2 do Cs envolvendo um nível fundamental e três excitados. Mostramos que, para cada transição hiperfina, a coerência fundamental-excitada de terceira ordem depende de efeito de população dos estados excitados e da coerência criada entre eles. Nossos resultados experimentais são, até onde sabemos, as primeiras medidas usando z-scan para a obtenção do indice de refração de vapor de césio. Os valores medidos de n2 são condizentes com os nossos cálculos teóricos.