Les capteurs d’images cherchent de nos jours non seulement à être performant mais également à être adaptés à leur environnement et à de nouvelles utilisations. On peut évoquer le cas des machines et véhicules autonomes par exemple. En raison de la qualité d’image et son coût, une vaste majorité des applications ont aujourd’hui adopté l’usage des pixels CMOS actifs à photodiodes pincées et à illumination par la face arrière.L’originalité de la solution proposée dans ce manuscrit repose l’intégration d’une photogate, utilisée par les capteurs CCD, au sein d’un pixel CMOS. Son utilisation optimise alors l’espace disponible dans le pixel et diminue le nombre d’implantation nécessaire à sa réalisation. Ce développement a également conduit à l’emploi d’une grille de transfert spécifique. Ces deux nouvelles structures auront toutes les deux été élaborées durant cette thèse notamment à l’aide de simulations et de structures de test.La caractérisation de ce nouveau pixel aura démontré de nombreux atouts : entre autres, l’augmentation de la charge à saturation et la réduction du courant d’obscurité. De plus, l’étude détaillée du courant d’obscurité indique une distribution davantage centrée. Celle-ci permet l’identification de contaminants et une meilleure tenue en température en comparaison à une photodiode classique.De nombreuses perspectives s’offrent à la structure telle que la réduction du pas du pixel ou son utilisation dans un environnement contraint en température. / Nowadays image sensors look neither to be efficient, but rather to be adapted to their environment or to new uses. Autonomous machines and vehicles can be mentioned for instance. Because of image quality and cost, a large majority of applications employs CMOS pixels and pinned back-side illuminated photodiodes.The originality of the solution proposed in this manuscript relies on the integration of a photogate, used by CCD sensors, inside a CMOS pixel. Its use optimize the available space inside the pixel and decrease the number of implantation needed to its realization. This development has also led to the use of specific transfer gate. Both structures have been created during this thesis and designed using simulation and specific test structures.The characterization of the developed pixel demonstrate many assets such as an increase of saturation charges and a reduction of dark current. Furthermore, a detailed study of the dark currant indicates a more gathered pixel distribution, allowing the identification of contaminants and a better temperature handling in comparison to a classical photodiode.The proposed structure offers many perspectives such as reduction of the pixel pitch or its potential use in an environment with a temperature constraint.

Global shutter pixels are indispensable for applications wherein the minimisation of motion artefacts is of critical importance. However, these pixels are more complex than the common rolling shutter type pixels and require some form of per-pixel storage. They are almost invariably reliant upon metal light shielding in order to protect their in-pixel memory nodes and this prevents them from taking advantage of some of the latest developments in CMOS image sensor technology. Backside-illumination is the most prominent example of such a technology. The greater sensitivity afforded by the reduced optical stack height is indispensable for many applications, particularly in the mobile market where form factor and power consumption are constrained. The design challenge is to exploit these advantages offered by backside-illumination without making use of metal shielding of the per-pixel memory. The research in this thesis covers the design, implementation and characterisation of a back-illuminated voltage-domain global shutter pixel. The pixel architecture is a novel 10 transistor-per-pixel architecture with dual independent in-pixel storage nodes. Beginning with the pixel architecture, the design is developed through TCAD-driven photodiode and pixel layout co-optimisation. The behaviour of pixels with differential parasitic light sensitivity (PLS) behaviour is analysed in greater detail than previously reported and a prediction model is developed based upon this. The 10T pixel is characterised and found to have excellent PLS of -73:5 dB native and -82:5 dB differential PLS at 940 nm. The dual in-pixel storage enables the pixel to operate either in a low noise correlated double sampling mode with differential PLS, or in an exposure-bracketed high dynamic range imaging (HDR) mode. This HDR mode is successfully demonstrated and yields substantial enhancement of the pixel dynamic range.