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Développement d’un pixel photogate éclairé par la face arrière / Development of a back side illuminated photogate pixelSuler, Andrej 15 January 2019 (has links)
Les capteurs d’images cherchent de nos jours non seulement à être performant mais également à être adaptés à leur environnement et à de nouvelles utilisations. On peut évoquer le cas des machines et véhicules autonomes par exemple. En raison de la qualité d’image et son coût, une vaste majorité des applications ont aujourd’hui adopté l’usage des pixels CMOS actifs à photodiodes pincées et à illumination par la face arrière.L’originalité de la solution proposée dans ce manuscrit repose l’intégration d’une photogate, utilisée par les capteurs CCD, au sein d’un pixel CMOS. Son utilisation optimise alors l’espace disponible dans le pixel et diminue le nombre d’implantation nécessaire à sa réalisation. Ce développement a également conduit à l’emploi d’une grille de transfert spécifique. Ces deux nouvelles structures auront toutes les deux été élaborées durant cette thèse notamment à l’aide de simulations et de structures de test.La caractérisation de ce nouveau pixel aura démontré de nombreux atouts : entre autres, l’augmentation de la charge à saturation et la réduction du courant d’obscurité. De plus, l’étude détaillée du courant d’obscurité indique une distribution davantage centrée. Celle-ci permet l’identification de contaminants et une meilleure tenue en température en comparaison à une photodiode classique.De nombreuses perspectives s’offrent à la structure telle que la réduction du pas du pixel ou son utilisation dans un environnement contraint en température. / Nowadays image sensors look neither to be efficient, but rather to be adapted to their environment or to new uses. Autonomous machines and vehicles can be mentioned for instance. Because of image quality and cost, a large majority of applications employs CMOS pixels and pinned back-side illuminated photodiodes.The originality of the solution proposed in this manuscript relies on the integration of a photogate, used by CCD sensors, inside a CMOS pixel. Its use optimize the available space inside the pixel and decrease the number of implantation needed to its realization. This development has also led to the use of specific transfer gate. Both structures have been created during this thesis and designed using simulation and specific test structures.The characterization of the developed pixel demonstrate many assets such as an increase of saturation charges and a reduction of dark current. Furthermore, a detailed study of the dark currant indicates a more gathered pixel distribution, allowing the identification of contaminants and a better temperature handling in comparison to a classical photodiode.The proposed structure offers many perspectives such as reduction of the pixel pitch or its potential use in an environment with a temperature constraint.
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CMOS Active Pixel Sensors for Digital Cameras: Current State-of-the-ArtPalakodety, Atmaram 05 1900 (has links)
Image sensors play a vital role in many image sensing and capture applications. Among the various types of image sensors, complementary metal oxide semiconductor (CMOS) based active pixel sensors (APS), which are characterized by reduced pixel size, give fast readouts and reduced noise. APS are used in many applications such as mobile cameras, digital cameras, Webcams, and many consumer, commercial and scientific applications. With these developments and applications, CMOS APS designs are challenging the old and mature technology of charged couple device (CCD) sensors. With the continuous improvements of APS architecture, pixel designs, along with the development of nanometer CMOS fabrications technologies, APS are optimized for optical sensing. In addition, APS offers very low-power and low-voltage operations and is suitable for monolithic integration, thus allowing manufacturers to integrate more functionality on the array and building low-cost camera-on-a-chip. In this thesis, I explore the current state-of-the-art of CMOS APS by examining various types of APS. I show design and simulation results of one of the most commonly used APS in consumer applications, i.e. photodiode based APS. We also present an approach for technology scaling of the devices in photodiode APS to present CMOS technologies. Finally, I present the most modern CMOS APS technologies by reviewing different design models. The design of the photodiode APS is implemented using commercial CAD tools.
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