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Three phase current controlled PWM inverter using bipolar transistorsSalmon, John C. January 1984 (has links)
No description available.
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IGBT design, modelling and novel devicesHsieh, Pei-Shan January 2015 (has links)
No description available.
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LIGBT design, physics and modellingCamuso, Gianluca January 2015 (has links)
No description available.
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Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar TransistorsWoywode, Oliver 13 February 1996 (has links)
The nonlinear behaviour of the base emitter junction in HBTs is investigated. Nonlinearities cause troublesome distortion and intermodulation of signals and raise the bit error rate. They are therefore a key issue in microwave communication systems. Hewlett-Packard's Microwave Design System (MDS) software package has been used to simulate these phenomena. The simulation results are verified by an analytical method called nonlinear current method which is a derivative of the Volterra series approach. With the aid of this method new analytical expressions are derived that provide insight into the subtleties of nonlinear phenomena. These expressions are evaluated by the program MAPLE and subsequently compared with the MDS results. Two different models for the B-E junction are juxtaposed. The derived equations reveal the identity and correspondence between the two models. Finally, this thesis also addresses harmonic balance simulation which is the type of simulation MDS employs to simulate nonlinear circuits.
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The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistorOkada, David N January 1986 (has links)
Typescript. / Thesis (Ph. D.)--University of Hawaii at Manoa, 1986. / Bibliography: leaves 308-310. / Photocopy. / xxix, 310 leaves, bound ill. 29 cm
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Development of a statistical model for NPN bipolar transistor mismatchLamontagne, Maurice. January 2007 (has links)
Thesis (M.S.) -- Worcester Polytechnic Institute. / Keywords: statistical model; mismatch; bipolar transistor. Includes bibliographical references (p.29).
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Improved RF noise modeling for silicon-germanium heterojunction bipolar transistorsXia, Kejun Niu, Guofu. January 2006 (has links) (PDF)
Dissertation (Ph.D.)--Auburn University, 2006. / Abstract. Vita. Includes bibliographic references.
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Modeling of thermal coupling in multifinger bipolar transistors /Celo, Dritan, January 1900 (has links)
Thesis (M. App. Sc.)--Carleton University, 2001. / Includes bibliographical references (p. 133-137). Also available in electronic format on the Internet.
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Impact of charge collection mechanisms on single event effects in SiGe HBT circuitsZhang, Tong, Niu, Guofu, January 2009 (has links)
Thesis--Auburn University, 2009. / Abstract. Vita. Includes bibliographical references (p. 77-81).
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Controlled IGBT switching for power electronics building blockYang, Xin January 2014 (has links)
No description available.
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