Fe chalcogenides : The discovery of superconductivity in Fe based compounds trig- gered an intense research activity in this field with significant importance given to material synthesis. As a result, numerous materials falling into four major classes and sharing similarities in physical properties were synthesized and investigated. In spite of subtle differences, all of them share many common features like crystal symmetry, magnetic ground state, close resemblance in phase diagram etc. Fe super- conductors are broadly classified into Fe pnictides (with Fe − pnictogen layer) and Fe chalcogenides (with Fe − chalcogen layer) in which the binary Fe chalcogenides possess the simplest crystal structure. The distinct magnetic and superconducting properties make them interesting candidates for research. Detailed study on such systems demand high quality single crystals. This thesis discusses single crystal growth and properties of Fe1+yTe1−xSex. Struc- tural, magnetic, superconducting and thermal properties of pristine and substituted compounds are explored. A characteristic feature associated with binary chalco- genides is the presence of excess Fe in the interstitial sites represented by y in the chemical formula. By fine tuning the composition, the effect of interstitial Fe on various physical properties can be analyzed. The current work deals with the influence of interstitial excess Fe on the structural, magnetic and superconducting properties of the parent compound Fe1+yTe and Se substituted Fe1+yTe1−xSex. The results are organized into eight chapters; an outline of each chapter is given below. Chapter 1 gives an introduction to the broad field of Fe superconductors. A de- tailed literature review providing comparison of Fe pnictides with chalcogenides is included. The background of the current work is discussed with reference to the im- portant aspects of crystal structure and its relation to the ordered ground states. An overview of the important theories on magnetic ordering and superconducting pair- ing is provided. In the later part, a generic phase diagram along with the individual phase diagrams of important systems are discussed. This is followed by a discus- sion of the characteristic properties of iron chalcogenides and different methods of bulk synthesis. The chapter is concluded with a note on the motivation behind the present work. Chapter 2 discusses the crystal growth techniques and experimental methods used in the present work. The basic working principles are briefly explained. Chapter 3 provides a detailed discussion of the single crystal growth procedure, its customization and basic characterization. Single crystals of all compositions un- der discussion are grown by a modified horizontal Bridgman method. Material preparation, growth parameters and overall temperature profile of crystal growth process are described. Single crystalline nature of the as-grown crystals is con- firmed with Laue scattering technique. All crystals show tetragonal symmetry at room temperature. The approximate crystal orientation is deduced by indexing the X-ray diffraction pattern of the cleaved crystals. The diffraction patterns exhibit a set of (00l) peaks. A detailed composition analysis is performed on the samples. The sample properties are very sensitive to composition and careful estimation is per- formed by conducting repeated measurements at multiple points on the samples under study. Chapter 4 deals with superconducting and magnetic properties of Fe1+yTe0.5Se0.5. Single crystals of two different Fe concentration, y=0.04 and 0.09 are grown in which the concentration of Se and Te are maintained close to 0.5. Among binary Fe chalcogenides, half substituted iron telluride shows the highest TC (15 K) at ambient pressure. Accordingly, this composition is chosen to evaluate the role of Fe concentration in modulating the superconducting behavior. Two different batches of both the samples are grown, one set containing small amounts of impurity phases and the other, representing a pure primary phase. Resistivity measurements performed on both compositions, y=0.04 and 0.09, show onset of superconductivity near 15 K. In the normal state above TC, the temperature derivative of resistivity dρ/dT changes from positive to negative as the excess Fe concentration rises. At higher Fe concentrations, a log 1/T divergence is discernible in the normal state. The contribution of interstitial Fe to superconductivity has been analyzed using magnetization measurement techniques. An increase in the width of superconducting transition is seen in all measurements as the Fe content increases. The superconducting volume fraction estimated from susceptibility data demonstrates that high concentration of Fe is not favorable to superconductivity. The upper and lower critical field are esti- mated from electric resistivity data (in applied magnetic field) and magnetization isotherms respectively. Comparison of the lower critical field between two compo- sitions strengthens the argument that higher excess Fe leads to suppression of super- conductivity. The second set of crystals with impurity phases reveals an anomalous magnetization peak near 125 K. The results from resistivity, DC magnetization and ac susceptibility are compared. Chapter 5 addresses the influence of excess Fe on the ordered ground state. The antiferromagnetic parent compound, Fe1+yTe single crystals, are also grown using the same procedure. It is proposed that excess Fe occupying the interstitial sites possess local moments which could interact with the magnetic phases. In an at- tempt to understand their magnetic properties in detail, single crystals are grown with y=0.06, 0.09, 0.11, 0.12, 0.13 and 0.15. Fe1+yTe undergoes magnetostructural transition at TN=67 K. As the concentration of Fe varies from 0.06 to 0.13, a marked suppression of TN occurs from 67 K to 56 K. Moreover, a single first order transi- tion is seen to split into two at the critical concentration, y=0.12. The derivative plot of magnetization and specific heat data clearly illustrate two well-separated peaks. The two transitions are denoted as TN=57 K and TS=46 K. TN here is identified as a second order transition and TS as a first order transition. The second order transi- tion is evident from the λ-like nature of the peak in the specific heat measurement. The first order transition is associated with a large thermal hysteresis in the heat- ing and cooling cycle. Raw data from the heat capacity calorimeter gives a clear hint towards the first order nature of TS. As the composition of Fe rises further, the multiple transitions subside and disappear. For higher concentration, y=0.15, a sin- gle continuous phase transition is observed. Impurity free, pure phase is noticed in most of the samples as evident in powder X-ray diffraction and bulk magneti- zation measurements. The thermal data of various compositions are analyzed and compared. Electrical resistivity data clearly reveals the shift in phase transition and the presence of multiple transitions. Unlike Fe1+yTe1−xSex, all compositions here display similar behavior above TN, irrespective of the concentration of excess Fe. Chapter 6 devotes special emphasis to the evolution of structural and magnetic properties of the critical composition, Fe1.12Te where multiple transitions are ob- served. The low temperature structure of the crystal is studied in detail using syn- chrotron powder X-ray diffraction. The data in the vicinity of the two transitions, TN and TS are carefully analyzed. The room temperature crystal structure belongs to tetragonal symmetry with P4/nmm space group, where it is paramagnetic. As the sample is cooled to just below TN, a magnetostructural transition occurs from tetragonal to orthorhombic space group Pmmn. Below TN, the XRD pattern of the tetragonal (200) peak splits into (200) and (020) representing an orthorhombic distortion. The second transition is observed at TS where the orthorhombic struc- ture undergoes a monoclinic distortion, to P21/m. Below TS, a mixed phase of or thorhombic and monoclinic structures are present. The powder diffraction studies are supplemented with thermodynamic measurements. From specific heat analy- sis, the different contributions and the change in entropy across the transitions are estimated. Linear thermal expansion study has confirmed the two structural transi- tions. The changes occurring in lattice parameters, bond distances, bond angles and unit cell volume as a function of temperature are calculated using powder pattern refinement. Synchrotron data, linear thermal expansion and thermodynamic mea- surement results all point to strong magnetostructural coupling in this material. A temperature-composition phase diagram is formulated using results obtained from different Fe compositions. Transition temperature is plotted as a function of excess Fe content, highlighting its role in determining the structural and magnetic phases in Fe1+yTe. Chapter 7 deals with the magnetic and superconducting properties of Se substi- tuted Fe1+yTe1−xSex. Single crystals are grown by carefully varying the concen- tration of Se from x=0.02 to 0.25 while keeping the nominal composition of excess Fe more or less same. In this work, focus is given to Fe-rich, selenium substituted compositions. The intention is to explore how Se substitution affects the multiple transitions observed in Fe1.12Te. At 2% Se substitution, the split peaks are evident with a slight shift in temperature. The temperature interval between the two tran- sitions decreases in comparison to the pristine compound. For further increases in Se concentration, instead of two well separated peaks, a weak broad hump is ob- served. For compositions with x >0.10, long range magnetic ordering is suppressed. As x increases above 0.15 the electrical resistivity drops indicating the onset of su- perconductivity. However, in the composition range 0.15 ≤ x ≤ 0.25, neither long range magnetic order nor bulk superconductivity is present. Alternately, weak magnetic transitions above the superconducting transition are visible. The transport and magnetic properties are similar to that observed in Fe1.09Te0.5Se0.5. By tuning the Se composition in Fe-rich samples, the magnetic and structural transitions, originally seen in the parent compound are suppressed. The emergence of superconductivity is also discussed. The last section of the chapter provides the modified phase diagram as a function of Se concentration, combining all compositions discussed in the thesis. This gives a detailed description of Fe chalcogenides in the composition range, x=0 to 0.5 with special emphasis on Fe rich samples. The different regions in the phases diagram describe the peculiar properties of Fe chalcogenides. Chapter 8 concludes the thesis with general conclusions pertaining to various observations made in the different chapters. Prospects for future work are briefly outlined.

The growing speed and bandwidth requirements of telecommunication systems demand all-optical on-chip solutions. Microphotonic devices can deliver low power nonlinear signal processing solutions. This thesis looks at the slow light photonic crystals in chalcogenide glasses to enhance low power nonlinear operation. I demonstrate the development of new fabrication techniques for this delicate class of materials. Both, reactive ion etching and chemically assisted ion beam etching are investigated for high quality photonic crystal fabrication. A new resist-removal technique was developed for the chemical, mechanical and light sensitive thin films. I have developed a membraning method based on vapor phase etching in combination with the development of a save and economical etching tool that can be used for a variety of vapour phase processes. Dispersion engineered slow light photonic crystals in Ge₃₃As₁₂Se₅₅ are designed and fabricated. The demonstration of low losses down to 21±8dB/cm is a prerequisite for the successful demonstration of dispersion engineered slow light waveguides up to a group index of around n[subscript(g)] ≈ 40. The slow light waveguides are used to demonstrate highly efficient third harmonic generation and the first advantages of a pure chalcogenide system over the commonly used silicon. Ge₁₁.₅As₂₄24Se₆₄.₅ is used for the fabrication of photonic crystal cavities. Quality factors of up to 13000 are demonstrated. The low nonlinear losses have enabled the demonstration of second and third harmonic generation in those cavities with powers up to twice as high as possible in silicon. A computationally efficient model for designing coupled resonator bandpass filters is used to design bandpass filters. Single ring resonators are fabricated using a novel method to define the circular shape of the rings to improve the fabrication quality. The spectral responses of the ring resonators are used to determine the coupling coefficient needed for the design and fabrication of the bandpass filters. A flat top bandpass filter is fabricated and characterized as demonstration of this method. A passive all-optical regenerator is proposed, by integrating a slow-light photonic crystal waveguide with a band-pass filter based on coupled ring resonators. A route of designing the regenerator is proposed by first using the dispersion engineering results for nonlinear pulse propagation and then using the filter responses to calculate the nonlinear transfer function.

Chemical Engineering / The successful commercialization of lithium-ion batteries is responsible for the ubiquity of personal electronics. The continued development of battery technology, as well as its application to new emerging markets such as electric vehicles, is dependent on developing safer, higher energy density, and cheaper electrode materials and battery chemistries. The focus of this dissertation is on identifying, characterizing and optimizing new materials for lithium- and sodium-ion batteries. Batteries are incredibly complex engineered systems with each electrode composed of conductive additive and polymeric binder in addition to the active material. All of these components must work together for the electrode system to function properly. In this work, glancing angle deposition (GLAD) and reactive ballistic deposition (RBD) are employed to grow thin films of novel materials with reproducible morphology for use as battery electrodes. The use of these thin film electrodes eliminated the need for conductive additives and polymer binders allowing for the active materials themselves to be studied rather than the whole electrode system. Two techniques are employed to modify the chemical properties of the electrode materials grown by RBD and GLAD: Alloying (Si-Ge alloys for Li-ion batteries and Sn-Ge alloys for Na-ion batteries) and partial chalcogenation (partial oxidation of silicon, and partial sulfidation and selenidation of germanium for Li-ion batteries). Both of these techniques are successfully employed to enhance the electrochemical properties of the materials presented in this dissertation. / text

Une nouvelle famille de vitrocéramiques, avec une microstructure inédite, a été fabriquée par une cristallisation contrôlée des verres dans le système GeSe2-Sb2Se3-CuI. L'influence de la composition et du processus de cristallisation des verres de base, sur la microstructure et sur l’intensité du photo-courant des vitrocéramiques a été étudiée. Une composition optimisée, le 40GeSe2-40Sb2Se3-20CuI, a été particulièrement étudiée avec des résultats suivants: (1) Après une étude systématique , il a été constaté que cette composition donne la plus forte intensité de photo-courant parmi tous les verres étudiés dans ce système pseudo-ternaire GeSe2-Sb2Se3-Cul. Il a été également démontré que le photo-courant généré par différentes vitrocéramiques est non seulement déterminé par la composition, mais aussi par la microstructure composite de la vitrocéramique, qui est déterminée par le processus de céramisation. Ce processus de céramisation a ensuite été optimisé. Par rapport au procédé de traitement thermique en deux étapes, le procédé en une seule étape à basse température est une stratégie plus appropriée pour obtenir une microstructure efficace, favorisant la séparation des charges, construisant des canaux conducteurs et donnant une intensité de photo-courant élevée dans la vitrocéramique. (2) La microstructure composite inédite, discutée ci-dessus est composée de micro-domaines conducteurs interconnectés, formées par des cristaux Sb2Se3 faiblement conducteur en forme de tiges, couverts par des nano-cristaux de Cu2GeSe3 beaucoup plus conducteurs. Le procédé le plus probable de la photo-génération efficace des charges est le suivant: les photons sont efficacement et essentiellement absorbés par Sb2Se3 ainsi que par Cu2GeSe3. Les hétérojonctions formées par les Sb2Se3 du type n et les Cu2GeSe3 du type p, favorisent la séparation de charges, tandis que les Cu2GeSe3 interconnectées et conductrices fournissent des canaux conducteurs et jouent ainsi le rôle de collecteur efficace de charges. Il en résulte ainsi une très longue durée de vie des porteurs de charge et un fort photo-courant. (3) La formation de nano-hétérojonctions entre les cristaux Sb2Se3 et Cu2GeSe3 dans un seul micro-domaine peut conduire à une séparation efficace des électrons et des trous photo-générés. Par conséquent, pour application photo-catalytique, il n’est pas nécessaire de former des canaux conducteurs (conducteurs interconnectés des micro-domaines) dans l'ensemble de la vitrocéramique. De plus, la formation de ces canaux conducteurs, nécessiterait une augmentation de la durée ou/et la température de recuit, pouvant conduire à une diminution de l'activité photo-catalytique à cause de la taille relativement grande des grains cristallins. Les vitrocéramiques optimisées montrent une bonne capacité de désamination oxydative et une forte activité photo-catalytique en général, démontrant ainsi son potentiel en tant que photo-catalyseur efficace. / A totally new family of glass ceramics with a unique microstructure was fabricated by controlling the crystallization of the GeSe2-Sb2Se3-CuI glass system. The influences of the material composition and the crystallizing process of the precursor glasses on the microstructure and photocurrent of the prepared glass ceramics were investigated. An optimized composition, 40GeSe2-40Sb2Se3-20CuI, was particularly studied with the following significant results: (1) After a systematic study, it was found that this particular composition shows the highest photocurrent density among all studied glasses in the pseudo-ternary GeSe2-Sb2Se3-CuI system. It is also demonstrated that the photocurrent generated by different glass ceramics is not only determined by the composition, but also by the composite microstructure of the glass ceramic, which is determined by the ceramisation process. This process was then carefully studied. Compared with the two-step heat treatment process, the single-step process at a low temperature is a more efficient strategy to build up an efficient composite microstructure, which promotes charge carrier separation and provides a conductive channel, leading to a high photocurrent intensity in the glass ceramic. (2) The above-mentioned unique composite microstructure is composed of interconnected conductive microdomains, formed by low conductive rod-like Sb2Se3 crystals, covered by relatively high conductive Cu2GeSe3 nanocrystals. The most likely process for efficient photogeneration of charges is proposed as follows: photons are efficiently and essentially absorbed by Sb2Se3 as well as by Cu2GeSe3, and then the heterojunction formed by n-type Sb2Se3 and p-type Cu2GeSe3 promotes the charge separation, whereas the oriented and relatively conductive Cu2GeSe3 aggregate provides a conductive channel and plays the role of efficient charge collector. This structure results in exceptionally long lifetime of charge carriers (around 16 µs) and high photocurrent (at least 100 times higher than any of Sb2Se3 and Cu2GeSe3 individually). (3) The formation of nano-heterojunctions between Sb2Se3 and Cu2GeSe3 crystals within a single conductive microdomain can fully lead to an efficient separation of photo-generated electrons and holes. Therefore, for the photocatalytic application, it is unnecessary to form conductive channels (interconnected conductive microdomains) in the whole glass ceramic. Moreover, in order to form conductive channels, the necessary increase of annealing time or/and temperature may decrease the photocatalytic activity due to its relatively large crystal grain size. The optimized glass ceramic exhibits a good oxidative deamination ability and high photocatalytic activity, demonstrating its potential as an efficient photocatalyst.

The objective of this thesis was to develop novel technologies for measuring the physical characteristics of high-speed pulse trains, for use in performance monitoring applications. This thesis describes the development of three separate techniques that perform measurements in either the time domain, frequency domain or the phase space of the optical signal. The first section investigates phase-sensitive pulse measurement techniques. A high- resolution SHG-FROG apparatus was custom-designed to measure 40GHz RZ pulse trains, from which an operational characterisation of a Mach-Zehnder modulator (MZM) was realised. A numerical model of a nonlinear pulse compressor was developed to compress 40GHz RZ pulses from 8.5ps down to 3.4ps. These pulses were time-division multiplexed to 80GHz, and phase-retrievals of the 80GHz pulse trains were measured. A comparison between the techniques of SHG-FROG and linear spectrogram has been undertaken for 10GHz pulse sources, exposing SHG-FROG's weaknesses at this particular repetition rate. The second section investigates a simple, time-averaged, nonlinear detection technique. Two-photon absorption in a GaAs/InGaAs quantum-well laser diode was used to measure the duty cycle (and by extension, the pulse duration) of a range of pulse sources. This technique was further developed to measure the extinction ratio of NRZ pulse trains. Additionally, the pulse duration of a mode-locked laser source was measured using the nonlinear absorption in a 1-m length of As2Se3 Chalcogenide glass fiber. This demonstrates that the nonlinear properties of this glass may well find application in future instrumentation. The third section investigates the development of an ultra-high resolution swept heterodyne spectrometer. This spectrometer was used to spectrally-distinguish repetitive 8-bit NRZ patterns at 2.5Gbit/s. It was also used to measure the chirp parameter of an X-cut LiNbO3 MZM, revealing a chirp parameter of απ/2 < 0.1 across a modulation band- width of 250-2500MHz. Additionally, the distinctive CW spectrum of a DFB laser diode was measured. Analysis of the measured CW spectrum yielded a linewidth enhancement factor of α≃ 1.8 and also the relative intensity noise of the DFB laser diode.

Chalcogenide glasses have attracted considerable attention due to their infrared transparency, low phonon energy, and high non linear optical properties. They have been explored as promising candidate for optical memories, gratings, switching devices etc. Because of their low phonon energy and high refractive indices, now a days these are used for high efficiency fibre amplifiers. Nevertheless, the availability of amorphous semiconductors in the form of high quality multilayers provides potential applications in the field of micro and optoelectronics. Among amorphous multilayers, chalcogenide multilayers are attractive because of the prominent photoinduced effects. Studies in chalcogenide amorphous multilayer have been directed towards two phenomena. One is photoinduced interdiffusion in short period multilayer systems which finds potential applications in holographic recording and fabrication of phase gratings . The other is photo darkening or photobleaching which is also known in thick films. These multilayers exhibit prominent photoinduced effects, similar to those exhibited by uniform thin films. In spite of its practical usefulness, the mechanism of photoinduced interdiffusion is not properly understood. Since most structural transformations are related to atomic diffusion, understanding of the structural transformation must be based on the diffusion process. The main aim of this thesis is to study the photoinduced diffusion in Sb/As2S3 multilayered films and (As2S3)1-xSbx thin films. In literature, there are reports about the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films, but the mechanisms of photoinduced interdiffusion of these elements are not very clear. Raman scattering and infrared spectroscopy techniques have been used to study the photoinduced interdiffusion in Se/As2S3 and Bi/As2S3 multilayered films by Malyovanik et al. (M. Malyovanik, M. Shiplyak, V. Cheresnya, T. Remeta, S. Ivan, and A. Kikineshi, J. Optoelectron. Adv. Mater. 5, 397 (2003). But many questions remain unanswered. The characteristic spectra of components in the multilayer and those of the diffused layer were rather similar. In the present thesis, photoinduced interdiffusion in Sb/As2S3 multilayered samples are studied by Fourier Transform Infrared spectroscopy (FTIR) at room and low temperature and X-ray photoelectron spectroscopy (XPS). The photoinduced effects in (As2S3)1-xSbx thin films are studied by FTIR, XPS and Raman Spectroscopy. The detailed information about the distribution of electronic states in the absorption edge, localized states and the new bonds formed between the components due to photoinduced interdiffusion elucidated from the above studies will give more insight into the mechanism and kinetics of photoinduced interdiffusion. The thesis consists of seven chapters. References are given at the end of each chapter.

Arsenic trisulfide (As₂S₃) waveguide devices on lithium niobate substrates (LiNbO₃) provide a set of compact and versatile means for guiding and manipulating optical modes in infrared integrated optical circuits, including the integrated trace gas detection system. As a member of the chalcogenide glass family, As₂S₃ has many properties superior to other materials, such as high transparency up to 10 [mu]m, large refractive index and high nonlinear coefficient. At the wavelength of 4.8[mu]m, low-loss As₂S₃ waveguides are achieved: The propagation loss is 0.33 dB/cm; the coupling efficiency is estimated to be 81 %; and less than 3 dB loss is measured for a 90-degree bent waveguide of 250 [mu]m bending radius. They offer an ideal solution to the optical interconnection -- the fundamental element of an optical circuit. LiNbO₃ is a birefringent crystal that has long been studied as the substrate material. Titanium diffused waveguides in lithium niobate substrate (Ti: LiNbO₃) have excellent electro-optical properties, based on which, on-chip polarization converters are demonstrated. New benefits can be obtained by integrating As₂S₃ and Ti: LiNbO₃ to form a hybrid waveguide, which benefits from the high index contrast of As₂S₃ and the electro-optical properties of Ti: LiNbO₃ as well as its easy connection with commercial single mode fibers. For hybrid waveguides, the mode coupling is key. A taper coupler is preferred owing to its simplicity in design and fabrication. Although preliminary experiments have shown the feasibility of such integration, the underlying mechanism is not well understood and guidelines for design are lacking. Therefore, a simulation method is first developed and then applied to the taper coupler design. Devices based on taper couplers are then fabricated and characterized. The study reveals that in the presence of mode beating, it is not necessarily the longer taper that is the better coupling. There exists an optimum length for a taper with fixed width variation. A two-stage taper design can largely reduce the total length, e. g. by 64%, while keeping the coupling efficiency above 90%. According to the frequency domain analysis, these practical taper couplers work for a wavelength range instead of a single wavelength.

During the last few years the scientific interest in chalcogenides glasses has been provoked on account of their properties and new application possibilities. These materials exhibit electrical and optical properties, which make them useful for several potential applications. Specifically the threshold and memory switching behavior and the infrared transmission of many of these glasses make the materials to be well suitable for use in memory devices and in fiber optics. Multicomponent glasses have been found to be more useful for many of these applications since the properties could be tailored for the specific uses. On account of this there has been great deal of interest in recent years in understanding the composition dependent variations of physical properties in these glasses. Models based on network topology and chemical ordering have been proposed to explain the composition dependence of physical properties. The Chemically Ordered Covalent Network (COCN) model is one of the best efforts put forth in this subject. This model predicts distinctive physical properties of these glasses for compositions at which there is a maximum number of heteropolar bonds. A physical model based on changes in network topology with composition has been proposed recently. This model predicts the rigidity to percolate in the network at the mean coordination number <r> = 2.40. This critical value of <r> at which the rigidity percolates is called the mechanical threshold or the rigidity percolation threshold. One more argument based on medium range interactions, existing in these glassy networks, suggests that the mechanical threshold should occur at <r> = 2.67. A general lack of consensus in the existing experimental reports on the mechanical threshold in some chalcogenides glasses prevents one from identifying the correct threshold value of <r>. A systematic study of the composition dependence of glasses with a large glass-forming region is necessary to resolve this controversy. The correct threshold value of <r> and the reason for the departure from this value in the other cases is the first step towards verifying the applicability of this model to chalcogenide glasses. Glasses belonging to IV — V — VI groups are natural candidates for this study because of their large glass forming region. It also seems possible to isolate the chemical threshold from interfering with the mechanical threshold in some of these glasses. In device applications of any semiconductor the optical and the electrical band gaps need to be varied and this is commonly done by doping. The large density of valence alteration pairs and intrinsic disorder of amorphous semiconductors counter-balances the effects of external additives. As a result, it is hard to electrically dope these materials. Non-equilibrium experimental techniques have been used to some extent, but one of the limitations is that they are confined to the thin film state. The finding that p to n type conduction sign changes can be induced by Bi and Pb in bulk Ge-M (M= S, Se and Te) glasses has therefore created special interest. This thesis deals with Ge-Se glass matrix doped with Te, Bi and Pb. The optical, thermal and electrical properties have been studied. The present thesis work is arranged in several chapters. The basic introduction of chalcogenide glasses is given in chapter one. This includes an introduction to chalcogenide glasses followed by a brief discussion on the important structural models, the possible defects in chalcogenide glasses and the electrical, optical and thermal properties of chalcogenide glasses. The second chapter discusses the experimental techniques used in the present investigations. The basic principles and theory behind the experiments, the experimental setup and the experimental procedure leading to the determination of the physical properties are given here. These include information about Differential Scanning Calorimetry (DSC), Photo acoustic (PA) spectroscopy and Photoluminescence studies. In the third chapter the experimental investigations on Ge-Se-Te glasses are presented. The chapter starts with the preparation and characterization of these glasses. It then gives an account of the earlier studies on Ge-Se-Te glasses that are relevant to the present work. The results of the DSC and PA studies are discussed in the following two sections. In the systems with Gex Se80-x Te20 and Gex Se75.x Te25, glasses with less than 20 at. % of Ge do not show any crystallization peak due to Se rich content. But Te and Ge-rich glasses show strong crystallization tendency. The composition dependence of Tg of this glassy system gives an evidence for the occurrence of the topological threshold or mechanical threshold at <r> = 2.40 and chemical threshold at <r> = 2.67. These can be explained on the basis of COCN model. The optical band gap and thermal diffusivity studies also show anomalous behavior at <r> = 2.40 and <r> = 2.67. The experimental results on Ge-Se-Te glasses are summarized in the last section of this chapter. The investigations on Bi doped Ge-Se and Ge-Se-Te glasses are given in the fourth chapter. The chapter starts with a brief introduction of preparation, characterization and a short review of earlier work. In PA studies the anomalous behavior is observed in thermal diffusivity and thermal diffusion length plot at 8-9 at. % of Bi doping of the Ge-Se and Ge-Se-Te glasses where the conduction changes from p to n type. These results are explained on the basis of percolation model and the formation of Bi2Se3 microcrystalline phase. Finally these results are summarized at the end of the chapter. The fifth chapter is devoted to the investigations on Pb doped Ge-Se glasses. It is arranged in five sections; preparation and characterization, earlier work, Photo acoustic and Photoluminescence studies. In PA studies the composition dependence of thermal diffusivity show anomalous behavior at x =F 9 at % of Pb in Pbx Ge42-x Sesg glasses and y = 21 at. % of Ge in Pb2o Gey Seso-y glasses where the conduction changes from p to n type. After that it reaches the maximum. After the conduction sign changes the conductivity increases with addition of respective Pb and Ge concentration in both series of glasses, which is reflected in thermal diffusivity value also. The results have been explained on the basis of COCN model. From PL studies, the PL intensity is high in un-doped Ge42 Scss glasses. With the addition of Pb into Ge-Se system the PL intensity goes down drastically up to 9 at. % of Pb, beyond 9 at. % the PL intensity is approximately the same up to 15 at. %. In the last section the results are summarized. Chapter six summarizes the essential features of the work reported in the thesis. These conclusions are drawn from the present and the earlier reported studies on Ge-Se-Te glasses, Bi doped Ge-Se and Ge-Se-Te glasses and Pb doped Ge-Se glasses. Finally based on the present experimental results, some future work has been suggested which could throw some light on a better understanding of/? to n transition and defects state of these glasses. It is worth extending the microscopic phase separation studies in these glasses. Highly sensitive experimental techniques are needed in this regard. Also some simulation work like Monte-Carlo simulation and Molecular dynamics simulation needs to be undertaken for understanding the microscopic phase separation and the role of defects in carrier type reversal in these glassy materials. All the references cited in the thesis are collected and listed at the end of the thesis.

Owing to their excellent infrared transmittance and good rheological properties, selenium based chalcogenide glasses have been materials of choice for a number of technological applications. However, chalcogenide glasses can undergo substantial structural relaxation even at room temperature due to their low glass transition temperatures. The origins of these dynamic processes and their correlation to the glass structure is therefore of fundamental and practical interest. In particular, a deep understanding of the dynamic response near the glass transition region could help elucidate the mechanism of these structural relaxation processes. The correlation between structure and dynamic properties of selenium based glass systems were therefore investigated. NMR and Raman spectroscopy measurements reveal that the structure of AsₓSe₁₋ₓ glass follow the chain crossing model in selenium-rich glasses but contain increasing amounts of cage molecules in arsenic-rich compositions. This structural pattern leads to systematic extrema in physical properties at the stoichiometric composition As₄₀Se₆₀.The dynamic response of AsₓSe₁₋ₓ glasses investigated by heat capacity spectroscopy shows two minima in melt fragility as a function of composition which correlate well with the dimensionality of the glassy network. The structure evolves from 2D to 3D during crosslinking of selenium chains by arsenic but reduces into a 2D layer-like structure at the stoichiometric composition. Upon precipitation of arsenic-rich cages the network first reverts back to 3D and eventually becomes a mix of 2D and 0D structural units. The presence of molecular clusters in the network is evidenced by a strong bimodal dynamic response at high arsenic contents. NMR and Raman spectroscopy measurements of GeₓSe₁₋ₓ glasses suggest a structure composed of aggregated tetrahedral units and long selenium chains with little or no connectivity. Distinct dynamic responses of these two separated structural motifs are revealed by heat capacity spectroscopy. A non-Gaussian distribution of the imaginary heat capacity peak provided further evidence for the structural heterogeneity. This behavior is consistent with high temperature NMR measurements which show that the dynamic response of floppy selenium chains is distinct from that of rigid tetrahedral units. Finally, heat capacity spectroscopy applied to pure selenium provides strong evidence for the microscopic origin of the non-exponential structural relaxation, a universal feature of fragile glasses. The evolution of the imaginary heat capacity peak shape during annealing shows a non-monotonic trend which remarkably matches model predictions based on the enthalpy landscape. These results indicate that the non-exponential character of the relaxation process is linked to density fluctuations in the glass.

The objective of this thesis was to develop novel technologies for measuring the physical characteristics of high-speed pulse trains, for use in performance monitoring applications. This thesis describes the development of three separate techniques that perform measurements in either the time domain, frequency domain or the phase space of the optical signal. The first section investigates phase-sensitive pulse measurement techniques. A high- resolution SHG-FROG apparatus was custom-designed to measure 40GHz RZ pulse trains, from which an operational characterisation of a Mach-Zehnder modulator (MZM) was realised. A numerical model of a nonlinear pulse compressor was developed to compress 40GHz RZ pulses from 8.5ps down to 3.4ps. These pulses were time-division multiplexed to 80GHz, and phase-retrievals of the 80GHz pulse trains were measured. A comparison between the techniques of SHG-FROG and linear spectrogram has been undertaken for 10GHz pulse sources, exposing SHG-FROG's weaknesses at this particular repetition rate. The second section investigates a simple, time-averaged, nonlinear detection technique. Two-photon absorption in a GaAs/InGaAs quantum-well laser diode was used to measure the duty cycle (and by extension, the pulse duration) of a range of pulse sources. This technique was further developed to measure the extinction ratio of NRZ pulse trains. Additionally, the pulse duration of a mode-locked laser source was measured using the nonlinear absorption in a 1-m length of As2Se3 Chalcogenide glass fiber. This demonstrates that the nonlinear properties of this glass may well find application in future instrumentation. The third section investigates the development of an ultra-high resolution swept heterodyne spectrometer. This spectrometer was used to spectrally-distinguish repetitive 8-bit NRZ patterns at 2.5Gbit/s. It was also used to measure the chirp parameter of an X-cut LiNbO3 MZM, revealing a chirp parameter of απ/2 < 0.1 across a modulation band- width of 250-2500MHz. Additionally, the distinctive CW spectrum of a DFB laser diode was measured. Analysis of the measured CW spectrum yielded a linewidth enhancement factor of α≃ 1.8 and also the relative intensity noise of the DFB laser diode.