• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 319
  • 40
  • 32
  • 23
  • 14
  • 9
  • 8
  • 5
  • 5
  • 4
  • 3
  • 1
  • 1
  • 1
  • 1
  • Tagged with
  • 567
  • 567
  • 557
  • 131
  • 120
  • 120
  • 88
  • 80
  • 73
  • 71
  • 70
  • 70
  • 57
  • 55
  • 51
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
101

Growth and characterization of group III-nitride power transistors, power rectifiers and solar-blind detectors by metalorganic chemical vapor deposition /

Lambert, Damien Jean Henri, January 2000 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 158-170). Available also in a digital version from Dissertation Abstracts.
102

Organometallic precursors for the chemical vapor deposition of LaB₆

Chotsuwan, Chuleekorn. January 2004 (has links)
Thesis (M.S.)--University of Florida, 2004. / Title from title page of source document. Document formatted into pages; contains 41 pages. Includes vita. Includes bibliographical references.
103

Flow structure and heat transfer in an impinging jet CVD reactor

Memon, Nasir, January 2009 (has links)
Thesis (M.S.)--Rutgers University, 2009. / "Graduate Program in Mechanical and Aerospace Engineering." Includes bibliographical references (p. 64-67).
104

Deposition of epitaxial Si/Si-Ge/Ge and novel high-K gate dielectrics using remote plasma chemical vapor deposition

Chen, Xiao, January 2003 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.
105

Chemical vapor deposition and characterization of zirconium tin titanate as a high dielectric constant material for potential electronic applications

Mays, Ebony Lynn, January 2003 (has links) (PDF)
Thesis (Ph. D.)--School of Materials Science and Engineering, Georgia Institute of Technology, 2004. Directed by Meilin Liu. / Includes bibliographical references (leaves 180-190).
106

Plasma deposition and treatment by a low temperature cascade arc torch

Yu, Qingsong, January 1998 (has links)
Thesis (Ph. D.)--University of Missouri-Columbia, 1998. / Typescript. Vita. Includes bibliographical references (leaves 154-161). Also available on the Internet.
107

Compound semiconductor native oxide-based technologies for optical and electrical devices grown on GaAs substrates using MOCVD /

Holmes, Adrian Lawrence, January 1999 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 147-151). Available also in a digital version from Dissertation Abstracts.
108

Synthesis of one-dimensional nanostructure materials

Zhou, Zhengzhi. January 2009 (has links)
Thesis (Ph.D)--Chemical Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Deng,Yulin; Committee Member: Hsieh, Jeffery S.; Committee Member: Nair, Sankar; Committee Member: Singh, Preet; Committee Member: Yao, Donggang. Part of the SMARTech Electronic Thesis and Dissertation Collection.
109

Low-energy electron induced processes in hydrocarbon films adsorbed on silicon surfaces

Shepperd, Kristin. January 2009 (has links)
Thesis (Ph. D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2010. / Committee Chair: Orlando, Thomas; Committee Member: El-Sayed, Mostafa; Committee Member: First, Phillip; Committee Member: Lackey, Jack; Committee Member: Tolbert, Laren. Part of the SMARTech Electronic Thesis and Dissertation Collection.
110

Cold wall reactor for ultra-high vacuum high temperature chemical vapor deposition

Points, Micah Shane 23 October 2013 (has links)
Chemical vapor deposition is a process that enables the deposition of thin films material with a high degree of thickness control, composition and film quality. In an ultra-high vacuum environment (UHV), films of high purity and controlled crystal structure can be achieved. The control of the crystal structure is achieved thanks to reduced contamination, e.g. oxygen, which allows the grown film to align itself with the underlying substrate. The film purity is also ensured by the reduced amount of contaminants present in the UHV environment. This master’s thesis discusses the design and construction of a cold wall reactor using a pyrolytic graphite heater encased in a thin layer of pyrolytic boron nitride, and an Oerlikon-Leybold Turbovac 361 turbomolecular pump. This heater is shown to achieve temperatures greater than 1200°C, as well as reach pressures in the 10-10 Torr range. Graphene growth on copper is discussed as well as the ultra-high vacuum annealing of graphene devices on boron nitride substrates. The graphene growth experiments coupled with this system’s annealing capabilities demonstrate the functionality and versatility of this type of chemical vapor deposition system. / text

Page generated in 0.0769 seconds