Silicon carbide (SiC) integrated circuits (ICs) can enable the emergence of robust and reliable systems, including data acquisition and on-site control for extreme environments with high temperature and high radiation such as deep earth drilling, space and aviation, electric and hybrid vehicles, and combustion engines. In particular, SiC ICs provide significant benefit by reducing power dissipation and leakage current at temperatures above 300 °C compared to the Si counterpart. In fact, Si-based ICs have a limited maximum operating temperature which is around 300 °C for silicon on insulator (SOI). Owing to its superior material properties such as wide bandgap, three times larger than Silicon, and low intrinsic carrier concentration, SiC is an excellent candidate for high-temperature applications. In this thesis, analog and mixed-signal circuits have been implemented using SiC bipolar technology, including bandgap references, amplifiers, a master-slave comparator, an 8-bit R-2R ladder-based digital-to-analog converter (DAC), a 4-bit flash analog-to-digital converter (ADC), and a 10-bit successive-approximation-register (SAR) ADC. Spice models were developed at binned temperature points from room temperature to 500 °C, to simulate and predict the circuits’ behavior with temperature variation. The high-temperature performance of the fabricated chips has been investigated and verified over a wide temperature range from 25 °C to 500 °C. A stable gain of 39 dB was measured in the temperature range from 25 °C up to 500 °C for the inverting operational amplifier with ideal closed-loop gain of 40 dB. Although the circuit design in an immature SiC bipolar technology is challenging due to the low current gain of the transistors and lack of complete AC models, various circuit techniques have been applied to mitigate these problems. This thesis details the challenges faced and methods employed for device modeling, integrated circuit design, layout implementation and finally performance verification using on-wafer characterization of the fabricated SiC ICs over a wide temperature range. / <p>QC 20170905</p>

A digital system is often required to operate under a specific frequency. A ring oscillator can be helpful in this circumstance because it can generate a signal with a specific frequency. However, a ring oscillator is also sensitive to the environment temperature. With the increasing requirement of accuracy and stability, many approaches appear worldwide to make a temperature-insensitive ring oscillator. This thesis project presents an approach to compensate the temperature effect on a Current Starved Ring Oscillator(CSRO). More concretely, we researched how to achieve temperature compensation for CSRO in a digitally-controlled configuration. A Phase Frequency Detector (PFD) block is adapted to sense the frequency difference between the reference frequency and CSRO frequency. Two Charge Pumps (CP)are used to quantify the difference in voltage signal. A Dynamic Comparator block compares the signals from CPs. A following Bidirectional Counter block can count up or down to change the current in CSRO by a four-bit signal. In the end, the CSRO can generate an oscillating signal at the appropriate frequency after some adaptation time. This proposed circuit was realized with AMS 0.35 um CMOS technology and simulated using the Cadence tools. Power consumption, temperature compensation analysis and voltage supply compensation analysis under different temperatures are also performed in the project.

This thesis deals with the design of automated system of electroplating. The first part is centered on designing the technological process for this electroplating and the setout of operating vats. It also deals with the project of mechanical construction, electrical system, with the computing procedure and the optimum choice of gear for galvanic line model. The work includes the design of a DC motor controller, the computing procedure and the construction of heating element for vats heater simulation. The last part of this thesis offers an insight to the control system and the assembled program. In the addendum, the photo of the realized model, the wiring scheme, and the programme transcript for control galvanic line model can be found.

Diplomová práce obsahuje stručný teoretický základ pro designéra/ku A/D převodníku v technologii CMOS a přehled architektur A/D převodníků používaných v automobilovém průmyslu. Volba vhodné architektury pro konkrétní aplikaci byla zásadním úkolem zpra- covaným v semestrálním projektu předcházejícím tuto práci a je rovněž součástí této práce. Analýza v Matlabu, ze které by mělo vyplynout, je-li třeba zahrnout do architek- tury podblok Sample and Hold, je také součástí práce. Klíčovou částí práce je dokumen- tace návrhu jednotlivých podbloků A/D převodníku – operačního zesilovače, kompará- toru a R-2R D/A převodníku – a ověření jejich funkčnosti. V závěru práce je ověřena funkčnost A/D převodníku jako celku.