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This thesis describes the convenient routes and the preparation conditions (temperature, oxygen partial presssure) which lead to the formation of single phase materials within the quaternary system Cu-Ni-Fe-O. The investigated compositions are the solid solutions CuxNi1-xFe2O4, the ferrites occurring in the phase triangle Cu0.5Ni0.5Fe2O4 -Cu0.9Fe2.1O4 - Cu0.5Fe2.5O4 and some copper-nickel oxide solid solutions. Three synthesis routes have been used, namely (i) the preparation and the thermal decomposition of freeze-dried carboxylate precursors, (ii) the preparation and the oxidation of intermetallic phases and (iii) the preparation and the heat treatment in air of mixed oxide/metallic powders. The thermal decomposition of freeze-dried Cu-Ni-Fe formate has been found as a suitable method for preparing single spinel phases within the Cu-Ni-Fe-O system. In comparison with the conventional solid state reaction, the required temperature is much lower. Concerning the solid solution CuxNi1-xFe2O4 , a single phase spinel is formed at 1000¢XC for x < 0.7; for CuO is identified as second phase. In this latter range the formation of a pure phase required an increase of the iron content in the mixture. The other single spinel phases in the phase triangle Cu0.5Ni0.5Fe2O4 - Cu0.9Fe2.1O4 - Cu0.5Fe2.5O4 have been synthesized under special synthesis p(O2)/T-conditions. For copper ferrites Cu1-xFe2+xO4 with x ?­ 0.1, 0.2, 0.33, 0.4 and 0.5, the change in the conductivity with the temperature is irreversible. The deviation from the linearity of the conductivity ?ã as a function of the temperature occurs due to the thermal history of these samples. The saturation magnetic moment (nB) at 5K, of some synthesized CuxNi1-xFe2O4 compounds has been determined. It has been found that nB increases with the nickel content in the ferrite sample.

This thesis describes the convenient routes and the preparation conditions (temperature, oxygen partial presssure) which lead to the formation of single phase materials within the quaternary system Cu-Ni-Fe-O. The investigated compositions are the solid solutions CuxNi1-xFe2O4, the ferrites occurring in the phase triangle Cu0.5Ni0.5Fe2O4 -Cu0.9Fe2.1O4 - Cu0.5Fe2.5O4 and some copper-nickel oxide solid solutions. Three synthesis routes have been used, namely (i) the preparation and the thermal decomposition of freeze-dried carboxylate precursors, (ii) the preparation and the oxidation of intermetallic phases and (iii) the preparation and the heat treatment in air of mixed oxide/metallic powders. The thermal decomposition of freeze-dried Cu-Ni-Fe formate has been found as a suitable method for preparing single spinel phases within the Cu-Ni-Fe-O system. In comparison with the conventional solid state reaction, the required temperature is much lower. Concerning the solid solution CuxNi1-xFe2O4 , a single phase spinel is formed at 1000¢XC for x < 0.7; for CuO is identified as second phase. In this latter range the formation of a pure phase required an increase of the iron content in the mixture. The other single spinel phases in the phase triangle Cu0.5Ni0.5Fe2O4 - Cu0.9Fe2.1O4 - Cu0.5Fe2.5O4 have been synthesized under special synthesis p(O2)/T-conditions. For copper ferrites Cu1-xFe2+xO4 with x ?­ 0.1, 0.2, 0.33, 0.4 and 0.5, the change in the conductivity with the temperature is irreversible. The deviation from the linearity of the conductivity ?ã as a function of the temperature occurs due to the thermal history of these samples. The saturation magnetic moment (nB) at 5K, of some synthesized CuxNi1-xFe2O4 compounds has been determined. It has been found that nB increases with the nickel content in the ferrite sample.

Photoelectrodes and photovoltaic devices have been prepared via multiple thin film deposition methods. Aerosol assisted chemical vapour deposition (AACVD), electrodeposition (ED), chemical bath deposition (CBD) and doctor blade technique (DB) have been used to deposit binary and ternary metal oxide films on FTO glass substrates. The prepared thin films were characterised by a combination of SEM (Scanning Electron Microscopy), powder X-ray diffraction, mechanical strength tests and photochemical measurements. Nickel oxide (NiO) thin films prepared by AACVD were determined to have good mechanical strength . with a photocurrent of 7.6 μA cm-2 at 0 V and an onset potential of about 0.10 V. This contrasted with the dark current density of 0.3 μA cm-2 at 0 V. These NiO samples have very high porosity with crystalline columns evidenced by SEM. In comparison with the AACVD methodology, NiO films prepared using a combination of ED and DB show good mechanical strength but a higher photocurrent of 24 μA cm-2 at 0 V and an onset potential of about 0.10 V with a significantly greater dark current density of 7 μA cm-2 at 0 V. The characteristic features shown in the SEM are smaller pores compared to the AACVD method. Copper (II) oxide (CuO) and copper (I) oxide (Cu2O) films were fabricated by AACVD by varying the annealing temperature between 100-325°C in air using a fixed annealing time of 30 min. It was shown by photocurrent density (J-V) measurements that CuO produced at 325 °C was most stable and provided the highest photocurrent of 173 μA cm-2 at 0 V with an onset potential of about 0.23 V. The alignment of zinc oxide (ZnO) nano-rods and nano-tubes fabricated by CBD have been shown to be strongly affected by the seed layer on the FTO substrate. SEM images showed that AACVD provided the best seed layer for aligning the growth of the nano-rods perpendicular to the surface. Nano-rods were successfully altered into nano-tubes using a potassium chloride bath etching method. NiO prepared by both AACVD and the combined ED/DB method were sensitized to absorb more of the solar spectrum using AACVD to deposit CuO over the NiO. A large increase in the photocurrent was observed for the p-type photoelectrode. These p-type photoelectrode showed a photocurrent density of approximately 100 μA cm-2 at 0 V and an onset potential of 0.3 V. This photocathode was then used as a base to produce a solid state p-type solar cell. For the construction of the solid state solar cells several n-type semiconductors were used, these were ZnO, WO3 and BiVO4. WO3 and BiVO4 were successfully produced with BiVO4 proving to be the optimum choice. This cell was then studied more in depth and optimised by controlling the thickness of each layer and annealing temperatures. The best solid state solar cell produced had a Jsc of 0.541 μA cm-2 (541 nA) and a Voc of 0.14 V, TX146 made up of NiO 20 min, CuFe2O4 50 min, CuO 10 min, BiVO4 27 min, using AACVD and then annealed for 30 min at 600°C.