Grâce à l'explosion du marché grand public des smartphones et tablettes, les capteurs d'image CMOS ont bénéficiés de développements technologiques majeurs leur permettant de rivaliser voir même de devancer les performances des capteurs CCD. En parallèle, dans les domaines de l'aérospatial ou de l'imagerie médicale, des capteurs CMOS ont également été développés pour des applications à fortes valeurs ajoutées avec des technologies reconnues pour leur robustesse en environnement ionisant. Le travail de cette thèse a pour but de réunir dans une même architecture de pixel les dernières avancées technologiques développées pour les capteurs grands publics avec une solution novatrice de durcissement aux rayonnements ionisants récemment développée chez STMicroelectronics. Pour la première fois, cette nouvelle architecture de pixel de 1,4µm de côté et éclairée par la face arrière intègre une photodiode pincée verticale à collection de trous, une chaine de lecture composée de transistors PMOS et des tranchées d'isolation profondes à passivation passive ou active. Ce type de pixel a été conçu à l'aide de simulations TCAD en trois dimensions qui ont permis d'optimiser l'intégration de procédés pour sa fabrication. Il a été caractérisé et comparé à un pixel équivalent de type N avant et après irradiation par rayonnement gamma. Le pixel développé au cours de cette thèse présente intrinsèquement un plus faible courant d'obscurité que son homologue de type N et une meilleure résistance aux radiations. La passivation active des tranchées d'isolation profondes permet d'atténuer fortement l'impact des dégradations habituellement observées au niveau des interfaces Si/SiO2 et s'avère donc prometteuse en environnement ionisant. Des mécanismes intrinsèquement différents de formation de pixels blancs sous irradiation ont été mis en évidence pour les pixels de type P et de type N. Enfin, les technologies de l'éclairement par la face arrière et de la photodiode verticale contribuent chacune à la bonne efficacité quantique du pixel ainsi qu'à sa capacité de stockage importante / Thanks to the growing smartphones and tablets consumer markets, CMOS image sensors have benefited from major technology developments and are able to rival with and even outperform CCD sensors. In parallel, for spatial and medical imaging applications, CMOS sensors have been developed using technologies recognized for their robustness in harsh ionizing environment. This Ph.D. thesis work aims at combining in one single pixel architecture the latest technology developments driven by consumer applications with a novel solution for radiation hardening recently developed at STMicroelectronics. For the first time, this innovative back-side illuminated pixel architecture integrates within a 1.4µm pitch a vertical pinned photodiode based on hole-collection, a PMOS readout chain and deep trench isolation with either passive or active interface passivation. This pixel has been developed using 3D-TCAD simulations allowing fast and efficient optimization of its fabrication process. Through a series of electro-optical characterizations, we have compared its performances to its N-type equivalent before and after irradiation with gamma rays. The pixel developed during this thesis exhibits intrinsically lower level of dark current than its N-type counterpart and improved radiation hardness. Active passivation of deep trench isolation greatly decreases the impact of degradations usually observed at Si/SiO2 interfaces and therefore shows very promising results in ionizing environment. Evidence of intrinsically different mechanisms of white pixel formation under irradiation for N-type and P-type pixels have been presented. Finally, back-side illumination technology and the vertical photodiode both contribute to the pixel’s high full well capacity and good quantum efficiency

The BRIght Target Explorer (BRITE) constellation is revolutionary in the sense that the same scientific objectives can be achieved smaller (cm3 versus m3 ) and lighter (< 10kg versus 1, 000kg). It is a space astronomy mission, observing the variations in the apparent brightness of stars. The work presented herein focuses on the assembly, integration and test of the instrument used on-board six nanosatellites that form the constellation. The instrument is composed of an optical telescope equipped with a Charge Coupled Device (CCD) imager and a dedicated computer. This thesis provides a particular in-depth look into the inner workings of CCD. Methods used to characterize the instrument CCD in terms of its bias level stability, gain factor determination, saturation, dark current and readout noise level evaluation are provided. These methodologies are not limited to CCDs and they provide the basis for anyone who wishes to characterize any type of imager for scientic applications.

The BRIght Target Explorer (BRITE) constellation is revolutionary in the sense that the same scientific objectives can be achieved smaller (cm3 versus m3 ) and lighter (< 10kg versus 1, 000kg). It is a space astronomy mission, observing the variations in the apparent brightness of stars. The work presented herein focuses on the assembly, integration and test of the instrument used on-board six nanosatellites that form the constellation. The instrument is composed of an optical telescope equipped with a Charge Coupled Device (CCD) imager and a dedicated computer. This thesis provides a particular in-depth look into the inner workings of CCD. Methods used to characterize the instrument CCD in terms of its bias level stability, gain factor determination, saturation, dark current and readout noise level evaluation are provided. These methodologies are not limited to CCDs and they provide the basis for anyone who wishes to characterize any type of imager for scientic applications.

In this work, homojunction interfacial workfunction internal photoemission (HIWIP) detectors based on GaAs, and heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors based mainly on the Gallium Arsenide/Aluminum Gallium Arsenide material system are presented. Design principles of HIWIP and HEIWIP detectors, such as free carrier absorption, photocarrier generation, photoemission, and responsivity, are discussed in detail. Results of p-type HIWIPs based on GaAs material are presented. Homojunction detectors based on p-type GaAs were found to limit their operating wavelength range. This is mainly due to band depletion arising through carrier transitions from the heavy/light hole bands to the split off band. Designing n-type GaAs HIWIP detectors is difficult as it is strenuous to control their workfunction. Heterojunction detectors based on Gallium Arsenide/Aluminum Gallium Arsenide material system will allow tuning their threshold wavelength by adjusting the alloy composition of the Aluminum Gallium Arsenide/Gallium Arsenide barrier, while keeping a fixed doping density in the emitter. The detectors covered in this work operate from 1 to 128 micron (300 to 2.3 THz). Enhancement of detector response using resonance cavity architecture is demonstrated. Threshold wavelength extension of HEIWIPs by varying the Al composition of the barrier was investigated. The threshold limit of approximately 3.3 THz (92 micron), due to a practical Al fraction limit of approximately 0.005, can be overcome by replacing GaAs emitters in Gallium Arsenide/Aluminum Gallium Arsenide HEIWIPs with Aluminum Gallium Arsenide/Gallium Arsenide emitters. As the initial step, terahertz absorption for 1 micron-thick Be-doped Aluminum Gallium Arsenide epilayers (with different Al fraction and doping density) grown on GaAs substrates was measured. The absorption probability of the epilayers was derived from these absorption measurements. Based on the terahertz absorption results, an Aluminum Gallium Arsenide/Gallium Arsenide HEIWIP detector was designed and the extension of threshold frequency (f0) to 2.3 THz was successfully demonstrated. In a different study, switching in Gallium Arsenide/Aluminum Gallium Arsenide heterostructures from a tunneling dominated low conductance branch to a thermal emission dominated high conductance branch was investigated. This bistability leads to neuron-like voltage pulses observed in some heterostructure devices. The bias field that initiates the switching was determined from an iterative method that uses feedback information, such as carrier drift velocity and electron temperature, from hot carrier transport. The bias voltage needed to switch the device was found to decrease with the increasing device temperature.

Electrical and optical characterizations of heterostructures and thin films based on group III-V compound semiconductors are presented. Optical properties of GaMnN thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on GaN/Sapphire templates were investigated using IR reflection spectroscopy. Experimental reflection spectra were fitted using a non - linear fitting algorithm, and the high frequency dielectric constant (ε∞), optical phonon frequencies of E1(TO) and E1(LO), and their oscillator strengths (S) and broadening constants (Γ) were obtained for GaMnN thin films with different Mn fraction. The high frequency dielectric constant (ε∞) of InN thin films grown by the high pressure chemical vapor deposition (HPCVD) method was also investigated by IR reflection spectroscopy and the average was found to vary between 7.0 - 8.6. The mobility of free carriers in InN thin films was calculated using the damping constant of the plasma oscillator. The terahertz detection capability of n-type GaAs/AlGaAs Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures was demonstrated. A threshold frequency of 3.2 THz (93 µm) with a peak responsivity of 6.5 A/W at 7.1 THz was obtained using a 0.7 µm thick 1E18 cm−3 n - type doped GaAs emitter layer and a 1 µm thick undoped Al(0.04)Ga(0.96)As barrier layer. Using n - type doped GaAs emitter layers, the possibility of obtaining small workfunctions (∆) required for terahertz detectors has been successfully demonstrated. In addition, the possibility of using GaN (GaMnN) and InN materials for terahertz detection was investigated and a possible GaN base terahertz detector design is presented. The non - linear behavior of the Inter Pulse Time Intervals (IPTI) of neuron - like electric pulses triggered externally in a GaAs/InGaAs Multi Quantum Well (MQW) structure at low temperature (~10 K) was investigated. It was found that a grouping behavior of IPTIs exists at slow triggering pulse rates. Furthermore, the calculated correlation dimension reveals that the dimensionality of the system is higher than the average dimension found in most of the natural systems. Finally, an investigation of terahertz radiation efect on biological system is reported.

The innovative design of flat panel volume computed tomography (CT) systems has recently led to the emergence of a wide spectrum of new applications for both diagnostic and interventional purposes, such as ultra-high resolution bone imaging, image guided interventions, dynamic CT angiography, and interventional neuroradiology. Most of these applications require low X-ray dose to limit potential harm to the patient. One of the main challenges of low dose imaging is to maintain a quantum noise limited system to achieve the highest possible signal to noise ratio (SNR) at a given dose. One potential method to achieve a quantum noise limited system is to employ a high gain detector. Current flat panel CT technology is based on indirect conversion detectors that contain a scintillator and hydrogenated amorphous silicon (a-Si:H) p-i-n photodetectors which have a gain below unity and require a specialized p-layer. In this thesis, an alternative detector to the p-i-n photodetector, which can achieve gain above unity and thus aid in achieving quantum noise limited systems is investigated for large area flat panel imaging. The proposed detector is based on amorphous selenium (a-Se). Amorphous selenium is the most highly developed photoconductor for large area direct conversion X-ray imaging and is still the only commercially available large area direct conversion flat panel X-ray detector. However, the use of a-Se for indirect conversion imaging has not been significantly explored. Amorphous selenium has field dependent mobility and conversion efficiency, which increase with increasing electric field. It is also the only large area compatible avalanche-capable material; a property that was discovered more than 30 years ago. This unique property could be leveraged to provide the gain necessary for low dose medical imaging applications. The only current commercial avalanche capable a-Se optical detector uses electron beam readout in vacuum, which is not large area compatible and makes integration with pixelated readout electronics challenging. The detector structure proposed in this research seeks to address the challenges associated with integration of an avalanche capable a-Se detector with large area X-ray imager. One important aspect in the development of a-Se avalanche detectors is reducing the dark current and preventing a-Se breakdown as the electric field across the device is increased. A high dark current reduces the dynamic range of the detector, it increases the noise level, and it can lead to crystallization of the detector due to joule heating. To overcome the dark current problem, different blocking layers that allow for integration with large area flat panel imagers were investigated. Experimental results from fabricated devices provided the basis for the choice of the most suitable blocking layer. Two device structures are proposed using the selected blocking layer, a vertical structure and a lateral structure, each having associated benefits and drawbacks. It was shown that introducing a polyimide blocking layer brought down the dark current more than four orders of magnitude at high electric fields and does not deteriorate the charge transport properties of the detectors. The polyimide blocking layer also greatly minimizes physical stress related crystallization in a-Se improving reliability. Gain above unity was observed in the vertical structure and the initiation of impact ionization was verified by performing time-of-flight experiments. Although impact ionization was not verified in the lateral structure, this device structure was found to be highly sensitive to ultraviolet light due to the absence of a top contact layer. Devices were fabricated on several different substrates, including a CMOS substrate, to demonstrate their integration compatibility with large area readout electronics. The exhibited performance of the vertical device structure demonstrates that it is a suitable alternative to the p-i-n photodetector for low dose imaging applications.

Les capteurs d’images CMOS connaissent une croissance rapide vers des applications à fortes valeurs ajoutées. Certains marchés en devenir, comme les applications d’imagerie médicale,sont axés sur la tenue aux rayonnements ionisants. Des solutions de durcissement par dessin existent actuellement pour limiter les effets de ces dégradations. Cependant, ces dernières peuvent contraindre assez fortement certains paramètres du pixel. Dans ce contexte, cette thèse propose une solution novatrice de durcissement aux effets d’ionisation par les procédés.Elle suggère l’utilisation de pixels intégrant une photodiode pincée à collection de trous pour limiter la dégradation du courant d’obscurité : paramètre le plus sévèrement impacté lors d’irradiations ionisantes. Cette étude est donc premièrement centrée sur la modélisation et l’étude du courant d’obscurité sur des capteurs CMOS standards aussi bien avant qu’après irradiation. Ces dernières assimilées, un démonstrateur d’un capteur intégrant des pixels de1.4 μm à détection de trous est proposé et réalisé. Les résultats en courant d’obscurité, induit par la contribution des interfaces, montrent de belles perspectives avant irradiation. Ce capteur a d’ailleurs été utilisé pour effectuer une comparaison directe sous irradiation entre un capteur à détection de trous et d’électrons à design identique. Ces essais montrent une réduction significative du courant d’obscurité aux fortes doses. Des voies d’amélioration sont proposées pour améliorer l’efficacité quantique du capteur, principal point à optimiser pour des applications aussi bien grand public que médicales. / CMOS image sensors are rapidly gaining momentum in high end applications. Some emerging markets like medical imaging applications are focused on hardening against ionizing radiation. Design solutions currently exist to mitigate the effects of these degradations. However, they may introduce additional limitations on pixel performances. In this context, this thesis proposes an innovative solution of hardening by process against ionization effects. It suggests using hole pinned photodiode pixels to mitigate the dark current degradation: one of the most severely impacted parameter during ionizing radiation. This study is first focused on the modeling and understanding of dark current variation on standard CMOS sensors before and after irradiation. Next, a sensor integrating hole-based 1.4 micron pixels is proposed and demonstrated. Dark current performances induced by interfaces contribution are promising before irradiation. A direct comparison under irradiation between hole and electron based sensors with similar design has been carried out. These experiments show a significant reduction in dark current at high doses. Ways of improvement are proposed to enhance the quantum efficiency of this sensor, the main area for improvement as well consumer as medical applications.

Le domaine de l’imagerie a toujours fait l’objet de curiosité, que ce soitpour enregistrer une scène, ou voir au-delà des limites de l’oeil humain grâce aux détecteursinfrarouges. Ces deux types d’imagerie sont réalisés avec différents matériaux. Dans le domainedu visible, c’est le silicium qui domine, car son absorbance spectrale correspond bien au spectrevisible et que ce matériau a été très étudié dans les dernières décennies. Dans le domainede l’infrarouge, plus particulièrement le MWIR (Middle Wave InfraRed), l’InSb est un boncandidat car il s’agit d’un matériau très stable. Cependant, certaines contraintes telles qu’unebande interdite étroite peuvent être limitantes et cela nécessite une température d’opérationcryogénique. Dans ces travaux, un signal parasite commun à ces deux matériaux est étudié : ils’agit du signal des télégraphistes (RTS : Random telegraph Signal) du courant d’obscurité. Cephénomène provient d’un courant de fuite de l’élément photosensible du pixel (photodiode).En effet, même dans le noir, certains pixels des imageurs vont avoir une réponse temporellequi va varier de façon discrète et aléatoire. Cela peut causer des problèmes de calibration, oude la mauvaise détection d’étoiles par exemple. Dans cette étude, deux axes principaux sontétudiés : la caractérisation du signal pour pouvoir mieux l’appréhender, et la localisation dessources à l’origine du RTS dans la photodiode afin d’essayer de l’atténuer. / Imaging has always been an interesting field, all the more so as it is nowpossible to see further than human eyes in the infrared and ultraviolet spectra. For each fieldof application, materials are more or less adapted : in order to capture visible light, Siliconis a good candidate, because it has been widely studied, and is also used in our everydaylife. Concerning the infrared, more particularly the MWIR spectral band, InSb has provedto be stable and reliable, even if it need to operate at cryogenic temperatures because ofa narrow bandgap.. In this work, a parasitic signal called Random Telegraph Signal (RTS)which appears in both materials (and also others, such as HgCdTe or InGaAs) is analyzed.This signal comes from the pixel photodiiode and corresponds to a discrete dark currentfluctuation with time, like blinking signals. This can cause detector calibration troubles, orfalse star detection for example. This study aims at characterizing RTS and localize the exactorigin in the photodiode in order to be able to predict or mitigate the phenomenon.

In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at ∼ 6.25, ∼ 10.5 and ∼ 23.3 µm. In T-QDIP structures, photoexcited carriers are selectively collected from InGaAs QDs through resonant tunneling, while the dark current is blocked using AlGaAs/InGaAsAlGaAs/ blocking barriers placed in the structure. A two-color T-QDIP with photoresponse peaks at 6 and 17 µm operating at room temperature and a 6 THz detector operating at 150 K are presented. Bi-QDIPs consist of two layers of InAs QDs with different QD sizes. The detector exhibits three distinct peaks at 5.6, 8.0, and 23.0 µm. A typical HIWIP/HEIWIP detector structure consists of a single (or series of) doped emitter(s) and undoped barrier(s), which are placed between two highly doped contact layers. The dual-band response arises from interband transitions of carriers in the undoped barrier and intraband transitions in the doped emitter. Two HIWIP detectors, p-GaAs/GaAs and p-Si/Si, showing interband responses with wavelength thresholds at 0.82 and 1.05 µm, and intraband responses with zero response thresholds at 70 and 32 µm, respectively, are presented. HEIWIP detectors based on n-GaN/AlGaN show an interband response in the UV region and intraband response in the 2-14 µm region. A GaN/AlGaN detector structure consisting of three electrical contacts for separate UV and IR active regions is proposed for simultaneous measurements of the two components of the photocurrent generated by UV and IR radiation.

Organic semiconductor technology has gained attention in both the sensor and display markets due to its low cost and simple fabrication techniques. The ability to fabricate organic semiconductor devices such as photodetectors and transistors on a flexible, lightweight substrate makes them less fragile and ideal candidates for portable large-area imaging applications. The use of organic semiconductor technology in large-area medical imaging can bring about a new generation of flexible and lightweight indirect X-ray imagers. These imagers are immune to mechanical shock and should be ideal for portable intraoral X-ray radiology. In order to realize these organic flexible imagers and their use in large-area medical imaging, many challenges associated with the device performance and fabrication need to be overcome. Among these challenges, one of the greatest is to improve the dark current performance of the organic semiconductor photodetectors (key for imager performance) with a high-photo to-dark current ratio. Low dark current is needed to improve the sensitivity of the imager, whereas a large photo-to-dark current ratio reduces noise in the extracted image. Numerous techniques have been reported to improve the dark current performance in vertical organic photodetector design; however, lateral photodetectors still lack research attention. This thesis presents a lateral multilayer photodetector design and a simplified technique to improve the dark current performance of lateral organic semiconductor photodetectors. Our technique allows us to apply a large bias voltage while maintaining a low dark current, high photo-to-dark current ratio, and improves detector speed; thus, the overall sensitivity of the detector is improved. We further show the integration of an organic photodetector with an organic backplane readout circuit to form a flexible large-area imager. This imager can be used for large-area digital imaging applications such as in medical radiology.