The South African gold mining sector consumes 47% of the mining industry’s electricity. On a deep level gold mine, 20% of the energy is consumed by the refrigeration system. The refrigeration system cools 67 ˚C virgin rock temperatures underground. Underground cooling demand increases significantly with deeper mining activities. Various cooling systems are available for underground cooling. This study focuses on the electricity usage of an ice storage system versus a chilled water system for underground cooling. An energy-savings approach was developed to determine possible power savings on the surface refrigeration system of Mine M. The savings approach involved converting an ice storage system to a chilled water system and varying the water flow through the system. The water flow was varied by installing variable speed drives on the evaporator and condenser water pumps. The feasibility of the energy-efficiency approach was simulated with a verified simulation model. Simulation results indicated the feasibility of converting the thermal ice storage to a chilled water system and implementing the energy-efficiency approach on Mine M. Simulated results indicated a 9% electricity saving when using a chilled water system. Various problems encountered by the mine were also a motivation to convert the thermal ice storage system. Converting an ice storage facility to a chilled water system for energy efficiency on a deep level gold mine Energy management is achieved through the monitoring, controlling and reporting of the implemented savings approach. Converting the glycol plant and recommissioning the chilled water plant gave the mine an additional chiller as backup to sufficiently meet underground demand. An annual summer power saving of 1.5 MW was achieved through the conversion and control strategy. It is concluded that conversion of the thermal ice storage system on Mine M results in an energy- and cost saving. / MIng (Mechanical Engineering), North-West University, Potchefstroom Campus, 2015

The fundamental physics and techniques employed in Laplace transform deep level transient spectroscopy (L-DLTS) are reviewed. A Laplace-DLTS system has been constructed. The high resolving power of this system has been demonstrated experimentally. The L-DLTS system was applied to characterize the defects in undoped n-type ZnO thin film grown by the pulsed laser deposition (PLD) method. A 0.3 eV deep trap has been identified. The formations of Ec-0.39eV and Ec-0.20eVcan be enhanced when the sample surface is seriously damaged by high temperature annealing.AnEc-0.25eV trap is identified in the freshly grown samples, but would disappear after the storage of 3 months. Copper doped n-type ZnO thin film samples with low carrier concentration (n~〖10〗^16 〖cm〗^(-3)) were investigated by using both conventional and Laplace DLTS techniques. Positive DLTS signal peaks were detected that are suspected to be contributed by the minority carrier (hole carrier) emission. A physics model involving the inversion layer of a metal-insulator-semiconductor contact has been invoked to interpret the hole carrier concentration existing near the metal-semiconductor interface. Expression for the defect concentration is determined as a function of the temperature of DLTS peaks. AnEv+0.6eV defect with high concentration (N_T~〖10〗^17 〖cm〗^(-3)) was detected. The concentration of Ev+0.6eVcan be enhanced when the annealing temperature was increased from 750 to 900 degree C. / published_or_final_version / Physics / Master / Master of Philosophy

Thesis (Ph. D.)--University of Hong Kong, 2007. / Title proper from title frame. Also available in printed format.

The thesis includes two aspects. The first part includes designs and optical study of electro-absorption modulator structures. Three structures are designed near 1.5

Thesis (M. Phil.)--University of Hong Kong, 2001. / Includes bibliographical references.

Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its wide applicability. In order to obtain semiconductor devices with stable and reproducible properties further study of deep level defects is essential. DLTS (Deep level Transient Spectroscopy) is a direct and straightforward techniqueto determine the energy level of the deep level defects. Other information such as activation energy and capture cross section of the defect can also be obtained through this method. In our study ZnO single crystal samples were implanted by oxygen with the energy of 150keV. After the pretreatment of hydrogen peroxide, Schottky contacts were fabricated with Au film deposited by thermal evaporation. Deep level defects were studied by deep level transient spectroscopy (DLTS). Single peak spectra were observed in the as-implanted sample and samples anneal at 350oC, 650oC and 750oC with the corresponding activation energy decreasing with the annealing temperature from ~0.29eV as found in theas-implanted sample. Three peaks were identified in the DLTS spectra of the 900oC sample, with the activation energies of 0.11eV, 0.16eV and 0.37eV respectively.After analysis in detail we found some peaks in the DLTS spectra were the combination of two other peaks, dominated in different temperature range. The thermal evolutions of the deep levels up to the temperature of 1200oC were also investigated. / published_or_final_version / Physics / Master / Master of Philosophy

published_or_final_version / Physics / Master / Master of Philosophy

Thesis (M.S.)--Texas State University-San Marcos, 2008. / Vita. Appendices: leaves 132 -234. Includes bibliographical references (leaves 235-236). Also available on microfilm.

Thesis (M. Phil.)--University of Hong Kong, 2008. / Includes bibliographical references (leaf 68-75) Also available in print.

Thesis (Ph.D.(Physics))--University of Pretoria, 2009. / Includes abstract in English. Includes bibliographical references. Also available online.