Abstract As ULSI circuits are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To reduce the RC delay time, many low dielectric constant materials have been developed. One of the most promising low-k materials is siloxane-based hydrogen silsesquioxane (HSQ) having the general formula (HSiO3/2)2n, n=2, 3, etc. available as Flowable Oxide (FOx). But low mechanical strength is the problem of HSQ. In order to modify the material composition and mechanical intensity of HSQ, a novel siloxane-based inorganic spin-on material Modified-HSQ has been developed for intermetal dielectric applications. In this thesis, the Intrinsic Properties of M-HSQ was investigated. And the effect of H2, O2 plasma treatment was investigated. Besides, In order to avoid the damage when remove the PR, to achieve small linewidth and reduce linewidth fluctuations. We employed E-Beam lithography to pattern the M-HSQ film. The leakage current of M-HSQ film by E-Beam curing is lower than film by conventional process.

Capacitive radio frequency (RF) micro-electromechanical (MEMS) switches are among the most promising applications in MEMS systems. They have been introduced in the last 15-20 years as a practical alternative over traditional semiconductor switches. Low-cost RF MEMS switches are prime candidates for replacing the conventional GaAs Field Effect Transistors (FET) and pin diode switches in RF and microwave communication systems, mainly due to their low insertion loss, good isolation, linear characteristic and low power consumption. Unfortunately, their commercialization is currently hindered by reliability problems. The most important problem is charging of the dielectric, causing unpredictable device behavior. The charging of the dielectric has been found to be a complicated process and is currently under intense research. Developing a good analytical model that would describe accumulating of charges in the dielectric and their influence on the device behavior would be the main step to achieving more reliable switches. This work intends to theoretically and experimentally investigate the dielectric charging effects of capacitive RF MEMS switches with silicon nitride and silicon dioxide as the dielectric layer. For the silicon nitride study, both MEMS switches and MIM capacitors were fabricated, and their charging behaviors were analyzed and compared. Several different dielectric stoichiometries, deposition temperatures, and thicknesses were examined in order to understand the effects of each parameter on the charging mechanisms of the dielectric. The goal was to determine the most favorable deposition conditions to induce minimum dielectric charging in silicon nitride capacitive switches. The switches were measured over a wide temperature range and the temperaturedependent behavior of the dielectric was examined to characterize and study its charging behaviors. For the silicon dioxide MEMS switches, several different actuation mechanisms were systematically analyzed, and their effects on the dielectric charging of the switches were studied. A general model of distributed charge and air gap was adopted and further developed to better explain the charging behavior of MEMS switches. The goal was to provide a deeper insight into the trapping processes in dielectric materials and their corresponding time constants. This will in turn aid in better modeling of charging processes in capacitive RF MEMS switches.

The thesis "Anlre resolved dielectric response in carbon nanotubes" is dedicated to expounding the the anisotropy in the fundamental dielectric response of carbon nanotubes. While nanotubes are along their axis essentially planar graphene, the rolled up topology gives rise to entirely new features for perpendicular polarizations.

<p>When polymer power cables were introduced into mediumvoltage applications in the late 1960s, the degradationphenomenon later referred to as<i>water treeing</i>was still unknown. However, this changedwithin a relatively short space of time. Just 5-10 years afterthese first polymer applications, faults began to appear thatcould be attributed to the new phenomenon-water treeing. Sincethen, cable manufacturers have been improving their designsgradually, and cables produced today are assumed to have muchlower susceptibility to water trees. However, water treeing isstill assumed to be the most important degradation process inthese applications.</p><p>There are huge amounts of polymer cable installations thatare degraded by water trees. Since many of these cables areinstalled in the same grid nets, one cable fault oftengenerates another. If two or more cables fail at the same time,the consequences can be extensive. A non-destructive diagnosticmethod makes it possible to assess cables and take action priorto failures.</p><p>This thesis presents the results of research work on thedevelopment of a measurement technique and diagnostic methodfor the assessment of medium voltage XLPE cables in the field.The method used is called high voltage dielectric spectroscopy,and involves the measurement of capacitance and loss as afunction of frequency at high voltages. The method is used in ashort frequency range of approximately one decade in thelow-frequency region (normally from 1 down to 0.1 Hz). Thevoltage levels used initially are all below the service-voltagelevel. If the cable is assessed to be free from water trees, aslightly increased voltage can be used.</p><p>Based on dielectric-spectroscopy measurements, specificwater-tree analysis and breakdown tests, a set of measurementprocedures and criteria that take into account differences incable designs has been proposed for the assessment of mediumvoltage XLPE cables. The characteristic responses of XLPEcables (in both non and water-tree-deteriorated cases) make itpossible to separate the cable response from the influence ofaccessories. Field experience shows thatwater-tree-deteriorated cables with relatively low breakdownstrengths can remain in service for many years.</p><p><b>Keywords:</b>dielectric spectroscopy, high voltage,variable frequency, diagnostics, non-destructive diagnostics,cables, medium voltage, polymer, XLPE, water trees, watertreeing</p>

<p>Clay, quartz and feldspar are widely available in Uganda. The location and properties of various clay deposits are reported in the literature, but little is reported on feldspar and quartz deposits. In this work an extended literature on ceramics and porcelains in particular, is documented. Samples from two deposits of feldspar and two deposits of quartz are characterised and found to possess requisite properties for making porcelain insulators. Sample porcelain bodies are made from materials collected from selected deposits using different mixing proportions of clay, feldspar and quartz. Their properties in relation to workability, firing temperature, dielectric and bending strengths are studied. It is found that a mixture consisting of 30% Mutaka kaolin, 15% Mukono ball clay, 30% Mutaka feldspar and 25% Lido beach flint yields a body with highest mechanical strength (72MPa) and dielectric strength (19kV/mm) when fired at 1250°C. The strength (both mechanical and dielectric) is found to decrease with increasing firing temperature. At high firing temperatures, the undissolved quartz in the body decreased, the glass content increases and pores are formed. Mullite content on the other hand does not change at temperatures above 1200°C but there are significant differences in the morphologies of the mullite crystals in the samples. Optimum mechanical and electrical properties are found at maximum virtification and a microstructure showing small closely packed mullite needles.</p>

<p>Silicon carbide rectifiers are commercially available since 2001, and MESFET switches are expected to enter the market within a year. Moreover, three inch SiC wafers can be purchased nowadays without critical defects for the device performance and four inch substrate wafers are announced for the year 2005. Despite this tremendous development in SiC technology, the reliability issues like device degradation or high channel mobility still remain to be solved.</p><p>This thesis focuses on SiC surface passivation and termination, a topic which is very important for the utilisation of the full potential of this semiconductor. Three dielectrics with high dielectric constants, Al2O3, AlN and TiO2, were deposited on SiC with different techniques. The structural and electrical properties of the dielectrics were measured and the best insulating layers were then deposited on fully processed and well characterised 1.2 kV 4H SiC PiN diodes. For the best Al2O3 layers, the leakage current was reduced to half its value and the breakdown voltage was extended by 0.5 kV, reaching 1.6 kV, compared to non passivated devices.</p><p>As important as the proper choice of dielectric material is a proper surface preparation prior to deposition of the insulator. In the thesis two surface treatments were tested, a standard HF termination used in silicon technology and an exposure to UV light from a mercury lamp. The second technique is highly interesting since a substantial improvement was observed when UV light was used prior to the dielectric deposition. Moreover, UV light stabilized the surface and reduced the leakage current by a factor of 100 for SiC devices after 10 Mrad γ ray exposition. The experiments indicate also that the measured leakage currents of the order of pA are dominated by surface leakage.</p>

Thesis (Ph. D.)--University of Queensland, 2001. / Includes bibliographical references.

Thesis (Ph. D.)--Washington State University. / Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 1999. / Vita. Includes bibliographical references (leaves 207-219). Available also in a digital version from Dissertation Abstracts.

Permanent dielectric materials are integral to the fabrication of microelectronic devices and packaging. Dielectrics are used throughout devices to electrically and mechanically isolate conductive components. As such, they are required to have low electrical permittivity and robust mechanical properties. For packaging applications, dielectrics can be directly photo-definable. Dielectrics need to have excellent lithographic properties. These properties are pivotal for enabling high yield and low cost fabrication of reliable, energy efficient devices. The aim of this work was to develop new positive tone dielectrics which have improved or application-specific lithographic, mechanical, and electrical properties. To this end, several new dielectric polymers and chemistries were evaluated and characterized. Initially, it was desired to develop a positive tone, polynorbornene (PNB) dielectric that utilizes diazonaphthoquinone (DNQ) photochemistry. Cross-linking was achieved with epoxy cross-linkers during a thermal cure. Several DNQ-containing compounds were evaluated, but only one had good miscibility with PNB. The dissolution characteristics of PNB were measured with respect to polymer composition, DNQ loading, and cross-linker loading. PNB films exhibited unique dissolution properties, and these measurements allowed for an optimum formulation to be developed. A formulation with 20 pphr DNQ and 10 pphr epoxy cross-linker had sufficient inhibition in unexposed regions and fast dissolution in exposed regions. The resulting dielectric was the first positive tone, DNQ-based PNB dielectric. After achieving photo-definability, the cross-linking of the cured dielectric was evaluated by characterizing the mechanical properties. It was discovered that DNQ acted as a cross-linker in these films, and this insight was key to achieving good curing of the dielectric. Several experiments were performed to support this conclusions, and the reaction kinetics of this cross-linking reaction were evaluated. This effort produced a functional, positive tone dielectric with a sensitivity of 408 mJ cm-2 and contrast of 2.3. The modulus was 2.0 to 2.6 GPa and the dielectric constant of 3.7 to 3.9, depending on the curing conditions. The DNQ cross-linking results led to the investigation of other cross-linking chemistries for positive tone dielectrics. A chemically amplified (CA) photochemistry was utilized along with a Fischer esterification cross-linking reaction. Patterning and cross-linking were demonstrated with a methacrylate polymer. Successful positive tone lithography was demonstrated at a high sensitivity of 32.4 mJ cm-2 and contrast of 5.2. Cross-linking was achieved at 120°C as shown by residual stress and solubility measurements. The CA photochemistry and Fischer esterification cross-linking were also demonstrated using a PNB dielectric, which was shown to have improved lithographic properties: a sensitivity of 8.09 mJ cm-2 and contrast of ≥ 14.2. Work was performed to evaluate the effect of the polymer composition on the mechanical and electrical properties. A polymer with 60 mol% hexafluoroisopropanol norbornene and 40 mol% tert-butyl ester norbornene exhibited a dielectric constant of 2.78, which is lower than existing positive tone dielectrics. It also outperformed existing dielectrics in several other categories, including dark erosion, volume change, cure temperature, and in-plane coefficient of thermal expansion. However, a limitation of this dielectric was cracking in thick films. The final study was to improve the mechanical properties of this CA PNB dielectric specifically to enable 5 µm thick films. First, a terpolymer was tested that included a non-functional third monomer. The dielectric constant increased to 3.48 with 24 mol% of the third monomer. Second, low molecular weight additives were used to lower the modulus. Only one of the five tested additives enabled high quality, thick films. This additive did not significantly affect the dielectric constant at low loadings. An optimized formulation was made, and processing parameters were studied. The additive decreased the lithographic properties, lowering the sensitivity to 175 mJ cm-2 and lowering the contrast to 4.36. In all, this work produced three functional dielectrics with positive tone photo-definability and good lithographic properties. Each dielectric can serve a variety of purposes in microelectronics packaging.