In this thesis the general Chebyshev filter synthesis procedure to generate transfer and reflection polynomials and coupling matrices were described. Key concepts such as coupled resonators, non-resonant nodes have been included. This is followed by microwave duplexer synthesis. Next, a technique to design dual band filter has been described including ways to achieve desired return loss and rejection levels at specific bands by manipulating the stopbands and transmission zeros. The concept of dual band filter synthesis has been applied on the synthesis of microwave duplexer to propose a method to synthesize dual band duplexers. Finally a numerical procedure using Cauchy method has been described to estimate the filter and duplexer polynomials from measured responses. The concepts in this thesis can be used to make microwave filters and duplexers more compact, efficient and cost effective.

This dissertation provides a comprehensive methodology for accurate analysis and design of miniaturized radio frequency (RF) surface acoustic wave (SAW) duplexer package. Full-wave analysis based on the three dimensional (3-D) finite element method (FEM) is successfully applied to model the package. The die model is obtained by combining the acoustics and die busbars parasitics models. The acoustics model is obtained using the coupling-of-models (COM) technique. The die busbars, bonding wires and printed circuit board (PCB) are modeled using full-wave analysis. After that, the models of package, die, and bonding wires are assembled together to get the total response. To take into account the mutual couplings, the methodology is extended to model the package, die busbars, and bonding wires together. The advantages and disadvantages of the methodology are also discussed. Based on the methodology, the Korea personal communication system (KPCS) duplexer is analyzed and designed. The isolation of KPCS duplexer package is significantly improved by redesigning inner ground plane, bonding wire scheme and ground via. A KPCS duplexer package is designed and excellent transmitter to receiver isolation in the transmission band is achieved. Simulation and measurement results are compared, and excellent agreement is found. Although we focus on investigating the methods to improve the isolation, the passband performance is also improved. The methodology is also successfully used for flip chip duplexer. The simulation results from our assembling method match the measurement results very well. Optimization method is applied to improve the transmit band isolation. With the new package and die design, the transmit band isolation can be improved from -53.6 dB to -65.2 dB. Based on the new package, the effect of the Rx ground trace on the isolation is investigated and the transmit band isolation can achieve -67.3 dB with the modification of the Rx ground trace. The technique developed in this dissertation reduces the design cycle time greatly and can be applied to various RF SAW device packages.

Plusieurs standards de téléphonie mobile ont été définis et sont utilisés actuellement. Dans un avenir proche, avec le développement de la 5G de nouveaux standards et de nouvelles bandes de fréquence faire leur apparition. De ce fait, avec l'utilisation de nombreux circuits dédiés à un standard et donc à une bande de fréquence, des difficultés d'intégration et desproblèmes de coûts apparaissent. Il est donc devenu nécessaire pour les concepteurs de proposer des circuits intégrés reconfigurables pour plusieurs gammes de fréquences avec des modes de fonctionnement différents.Dans un système d'émetteur récepteur, le duplexeur permet l'établissement d'une communication simultanée en utilisant une seule antenne pour la transmission et la réception de données, sans que celles-ci soient corrompues. C'est un composant vital, surtout pour la chaine de réception car la réception du signal désiré dépend de ses caractéristiques. Ce dispositif est conçu sur du matériau piézoélectrique, qui ne permet pas d'obtenir un filtre agile en fonction de la fréquence. Dans ce contexte, il est intéressant de rechercher une nouvelle architecture de duplexeur, permettant une réalisation intégrée et un fonctionnement agile.Plusieurs architectures de duplexeur ont été retenues en se basant sur des études récentes menées dans différentes équipes de recherche. Un classement de ces architectures a été proposé, avec des améliorations pour les rendre intégrables et reconfigurables. Parmi toutes les solutions de duplexeurs passifs étudiées, le duplexeur à coupleur hybride 3dB est unesolution permettant d'obtenir des performances attractives. Les simulations pour différentes bandes de fréquences ont montré qu’il était difficile de respecter les spécifications de l’isolation Tx/Rx. Des solutions possibles ont été présentées et des modifications de la structure d'un amplificateur du LNA ont été évaluées en simulation. Ainsi, les performancesd’isolation peuvent être améliorées grâce à des structures actives d’annulation du signal résiduel Tx.La conception, la réalisation et le test de coupleurs hybrides et duplexeurs sont présentés. Le circuit a été implémenté en utilisant la technologie SOI 0.13 micromètre de ST Microelectronics et mesuré avec un boitier BT soudé sur un support de test PCB. Les performances RF du duplexeur peuvent être ajustées en fonction de la bande de fréquence désirée grâce aux capacités commutées. Les performances RF du coupleur hybride 3dB permettent d’envisager l’application de la structure proposée pour les futurs développements de systèmes de téléphonie. / Several standards have been defined and are currently used on mobile phones. With the high request for the broadband, several new standards are developed and introduced in 5G. This results in the use of many circuits, dedicated to one standard and thus one frequency band, which increase the difficulty of integrating these dedicated circuits and therefore costly. It hasbecome necessary for designers to propose tunable integrated circuit that can address several frequency ranges with different operating modes.The duplexer allows the establishment of simultaneous communications, using a single antenna for sending and receiving data, without any interferences. It is a vital component, especially for receiver. In fact, the quality of the received signal depends greatly on the duplexer characteristics. This device is designed on the piezoelectric material, which does not allow to achieve a tunable filter according to the frequency. In this context, it seems interesting to study a new architecture of duplexer. Therefore, it is necessary to define the duplexer function based on studies and system simulations, thus identify the constraints and technology limitations. Several duplexer architectures were selected based on recent studies in different research teams.A classification of these architectures was proposed and also improvements to make them integrated and tunable. Among all the solutions studied, the duplexer using hybrid 3dB coupler shown the most attractive performance. Simulations for different frequency bands showed that it's difficult to achieve Tx/Rx isolation requirements. Different solutions have been presented and LNA structure have been changed and thus evaluated by simulations. Thanks to that, the Tx/Rx isolation can be improved through active cancellation structures.The final chapter presents the design, implementation and testing of hybrid 3dB coupler and duplexer. It has been implemented using SOI 0.13 micrometer from ST Microelectronics and tested on BT-resin substrat. The RF performance of the duplexer can be corrected according to the desired frequency band through the switched capacitor. The RF performance of the hybrid 3dB coupler is in the line with expectations and allows to consider its integration in future system developments.

The aim of this master’s theses was a designing of duplexer working in non license frequency band 5.6GHz. The theses is concerning with selection of suitable concept for a given duplexer, with creating a model in software for simulation of distribution of electromagnetic field and with subsequent implementation of duplexer and verifying its parameters.

Surface acoustic wave (SAW) technology has been in use for well over one century. In the last few decades, due to its low cost and high performance, this technology has been widely adopted in modern wireless communication systems, to build filtering devices at radio frequency (RF). SAW filters and duplexers can be virtually found inside every mobile handset. SAW devices are traditionally recognized as passive devices with high linear signal processing behavior. However, recent deployments of third generation (3G) and fourth generation (4G) mobile networks require the handsets to handle an increasing number of frequency bands with more complex modulation /demodulation schemes and higher data rate for more subscribers. These requirements directly demand more stringent linearity specifications on the front end devices, including the SAW duplexers. In the past, SAW duplexer design was based on empirically obtained design rules to meet the linearity specifications. Lack of predictability and an understanding of the root cause of the nonlinearity have limited the potential applications of SAW duplexers. Therefore, research on the nonlinearity characterization and an accurate modeling of SAW nonlinearity for mobile device applications are very much needed. The Ph.D. work presented here primarily focuses on developing a general nonlinear model for SAW resonators/duplexers. Their nonlinear characteristics were investigated by measuring the harmonic and intermodulation distortions of resonators. A nonlinear Mason model is developed and the characterization results are integrated into SAW duplexer design flows to help to simulate the nonlinear effects accurately and improve the linearity performance of the products. iv In this dissertation, first, a novel nonlinear Mason equivalent circuit model including a third order nonlinear coefficient in the wave propagation is presented. Next, the nonlinear distortions of SAW resonators are analyzed by measuring large-signal harmonic and intermodulation spurious emission on resonators using a wafer probe station. The influence of the setups on the measurement reliability and reproducibility is discussed. Further, the nonlinear Mason model is validated by comparing its simulation results with harmonic and intermodulation measurements on SAW resonators and a WCDMA Band 5 duplexer. The Mason model developed and presented here is the first and only nonlinear physical model for SAW devices based on the equivalent circuit approach. By using this new model, good simulation measurement agreements are obtained on both harmonic and intermodulation distortions for SAW resonators and duplexers. These outcomes demonstrate the validity of the research on both the characterization and modeling of SAW devices. The result obtained confirms that the assumption of the representation of the 3 rd order nonlinearity in the propagation by a single coefficient is valid

Ce travail porte sur la conception, la fabrication et la caractérisation d’une photodiode très haut débit (UTC PD) et son intégration avec un préamplificateur optique à semi-conducteur (SOA) pour les liaisons optiques à courte distance à 100 Gbit/s en bandes C et O. Il porte également sur la conception d'un duplexeur (Tx / Rx) avec liaison montante en bande C et liaison descendante en bande O. L'intégration monolithique d’un SOA avec une photodiode haut débit sans filtre optique entre les deux présente des avantages majeurs parmi lesquels: - Augmentation de la distance de transmission. - Augmentation du nombre d'utilisateurs connectés. - Diminution des coûts globaux de fabrication incluant l’assemblage. La première partie de cette étude porte sur l'optimisation SOA pour un fonctionnement à forte puissance (Psat). Un faible facteur de bruit (NF) et une faible dépendance à la polarisation (PDL) sont requis pour les récepteurs préamplifiés. De plus, un fonctionnement du et opérer en régime linéaire est nécessaire pour les schémas de modulation complexes. Le SOA actuel possède un gain de 18 dB avec un facteur de bruit de 8 dB, une faible PDL (<2 dB), et une bonne puissance de saturation en entrée (-8 dBm). Grâce à l’optimisation de la structure verticale du SOA et de son couplage avec la fibre les performances attendues sont améliores : Psat >-5 dBm, NF <8 dB, PDL et gain similaire. D'autre part, les interconnexions électriques de la photodiode ont été optimisées ce qui a permis de démontrer des photodiodes avec une bande passante supérieure à 100 GHz. Les photodiodes présentent un fort coefficient de réponse (R) (0,6 A/W à 1,3 μm et 0,55 A/W à 1,55 μm) et une faible PDL <1 dB. Un fort courant de saturation de 14 mA à 100 GHz a aussi été démonté. Enfin, la caractérisation des SOA-UTC réalisés a montré simultanément une très forte responsivité (95 A/W), une faible dépendance à la polarisation PDL (<2 dB), un faible NF (8 dB) et une large bande passante à 3 dB (> 95 GHz), qui placent nos composants au meilleur niveau de l’état de l’art avec un produit gain-bande record de 6,1 THz. Les Mesures numériques à 64 Gbit/s montrent que notre récepteur atteint une sensibilité de -17 dBm pour un taux d'erreur de 10-9, et la sensibilité attendue à 100 Gbit/s est de -14 dBm / This work focuses on the design, fabrication and measurements of a uni-travelling carrier high speed photodiode (UTC PD) and its integration with a semiconductor optical preamplifier (SOA) for short reach 100 Gbit/s optical links, in O- and C- bands. This work also focuses on the design of a duplexer (Tx/Rx) with downstream in O-band and upstream in C-band. The SOA monolithic integration with a high speed PD without an optical filter in between yields major benefits among which: - Increase in the transmission distance. - Increase in the split ratio correlated to the number of connected users. - Decrease of the overall fabrication and assembling cost. The first part of this work is dedicated to optimizing the SOA for high power operation (Psat). The low noise figure (NF), and polarization dependence loss (PDL) are critical parameters for a preamplified receiver. Also complex modulation formats require linear gain regime of the SOA. The current SOA presents 18 dB gain with NF (8 dB), low PDL (<2 dB), and good input power saturation (-8 dBm). Thanks to further optimization of the SOA vertical structure and coupling with the optical fiber, the expected SOA performance is higher Psat >-5 dBm, NF <8 dB, similar PDL and gain. Secondly, the electrical interconnects of the photodiode is optimized to increase the photodiodes’ bandwidth, which allows to demonstrate photodiode with >100 GHz bandwidth. The PD presents high responsivity (R) (0,6 A/W at 1,3 μm and 0.55 A/W at 1,55 μm) and low PDL <1 dB. Also the saturation photocurrent is high (14 mA at 100 GHz). Finally, the SOA-UTC demonstrates high responsivity (95 A/W), low PDL (<2 dB), low NF (8 dB) and a wide 3 dB bandwidth (>95 GHz), which yields a record gain-bandwidth product of 6.1 THz. Large signal measurements at 64 Gbit/s show that our receiver reaches a low sensitivity of -17 dBm for a bit error rate of 10-9, and is expected to reach -14 dBm at 100 Gbit/s