The relation between the electrical property and the material microstructure of InSb grown on Si utilizing electron beam evaporation technology has been investigated. The improvement of the InSb electrical property with controlling annealing environment after post annealing is demonstrated. The crystal structure of InSb thin films were characterized with X-ray diffraction (XRD) and the surface morphology was examined by scanning electron microscope (SEM). The composition of InSb films was analyzed by electron probe microscope analysis (EPMA) and the mobility of InSb films were measured by Hall measurement. Finally, the grain size and texture of InSb films microstructure were studied by transmission electron microscope (TEM). The films were grown with different In/Sb flux ratio by controlling electron energy during electron evaporation. The results show that the poly-InSb films were formed due to large lattice difference between Si and InSb . The InSb films which had higher In concentration behave higher mobility. The highest mobility of the as-grown film is around 12000(cm2/Vs). The mobility of InSb can be improved to 26000 (cm2/Vs) by added extra Sb source annealed at 500¢J for 5 hours in an sealed ampoule. The extra Sb which dissolved with the existed In droplet in the film and adjust the composition ratio of In/Sb closing to 1:1. Besides, the post-annealing process provides the InSb film to gain much better texture. Both these two factors contribute to improve the electrical property of InSb films.

In this study, the AZO thin films were deposited with various manufacturing conditions, such as working pressure of oxygen and substrate temperature, by e-beam evaporation. The microstructure of the AZO film was observed by SEM and AFM. Sheet resistance was measured using four-point probe method. Optical transmittance was measured in the visible range by UV spectrophotometer. Finally, AZO transparent film was used as a substitute for ITO to fabricate the radiation-resistant glasses. The optimum parameters for depositing AZO films are glass substrates of 80¢J and working pressure of 1¡Ñ10-4 Torr. The film resistance is 9.2¡Ñ10-4 £[-cm with a film thickness of 60 nm. The refractive index was measured to be 2.05 at a wavelength of 510 nm. The optical transmittance of the prepared films was above 83 % in the visible range. The manufacturing conditions for depositing AZO multilayer coatings are working pressure of 5.0¡Ñ10-5 Torr, ion gun working pressure of 6.0¡Ñ10-5 Torr, voltage of 6.2 V, oxygen gas flow rate of 36 sccm and glass substrates of 80¢J. The optical transmittance of the glass was above 94 % in the visible range.

In this work, we will focus on the quaternary system Cu1-xAgxInSe2 (CAIS) to investigate the effects of silver (Ag) contribution and exchange with copper (Cu) in CuInSe2. This system is located between the ternary semiconducting chalcopyrite compounds CuInSe2 and AgInSe2. These are two most popular materials applied in photovoltaic cells because of their high optical absorption coefficient, which is an important factor for the manufacture of devices, direct energy gap with values Eg ~1.05 and 1.24 eV, respectively, and excellent thermal stabilities in air. As being a quaternary alloy, we expect that Cu1-xAgxInSe2 will show the advantage of a large degree of variation of their properties as a function of the composition, which allows adjusting of the band gap and other properties. We will analyze the behavior of Ag in the structure depending on the annealing and the effects of the Ag exchange to the Cu vacancies in this crystal structure by changing x (Ag content). The crystals will be characterized structurally by X-ray diffraction (XRD). It will be used to prove crystallinity, determine perfection and lattice parameters depending on composition. Surface morphology and stoichiometry will be examined using scanning electron microscope (SEM) equipped with EDXA. Moreover, electrical properties including the temperature dependent electrical conductivity, and carrier concentrations and mobility extracted from Hall effect measurements, and, optical properties including absorption coefficient, photoconductivity, spectral transmission, and optical band gap have been determined to characterize Cu1-xAgxInSe2 thin films deposited using e-beam evaporation technique.

Direct conversion of solar energy, which is the most powerful and unlimited one among the renewable energy sources / into the electrical energy by the photovoltaic devices, is a promising way of meeting the energy needs of future. Thin film semiconductor materials show great promise for the production of efficient, low-cost solar cell devices. Recently advanced research on thin film photovoltaics in all aspects, has attracted intense attention. Thin film semiconductors for the photovoltaic applications are deposited in large areas by different methods. In this study, deposition and characterization of CuIn1-x GaxSe2 ( CIGS ) semiconductor thin films by thermal evaporation and e-beam evaporation methods were investigated. Material properties and deposition parameters of the thin films are aimed to be optimized for solar cell applications. Structural properties of the deposited CIGS thin films were examined through X-ray diffraction and Energy Dispersive X-ray Analysis. The temperature dependent electrical conductivity, Hall effect and photoconductivity of these samples have been measured between 100 and 400 K. For the optical characterization of CIGS thin films, the transmission measurements have been carried out in the wavelength region of 325-900 nm. The changes in the structural, electrical and optical properties of samples through post-depositional annealing effect were also analyzed.

Near infrared region (NIR) of the electromagnetic spectrum (EM) is defined as 700nm to 1400nm wavelength interval by International Commission on Illumination(CIE). This wavelength interval is extensively used for target acquisition, night vision, wireless communication etc. Therefore, filtering the desired portion of EM spectra becomes a need for that kind of applications. Interference filters are multilayer optical devices which can be designed and produced for the desired wavelength intervals. The production of near infrared interference filters is a process of depositing thin material layers on the suitable substrates. In this thesis, a multilayer NIR filter will be designed for a selected wavelength interval by the use of dierent materials. Then, transmission quality, thermal stability, dependence of the transmission values on the incoming beam angle, performance and durability of the filter will be studied.

In the present study, the effect of S and Se substitution on structural, electrical and optical properties of AgGa(Se2-xSx) thin films has been investigated. AgGa(Se0.5S0.5 )2 thin films were prepared by using the thermal evaporation method. X-ray diffraction (XRD) analysis has revealed that the transformation from amorphous to polycrystalline structure took place at about 450 oC. The detailed information about the stoichometry and the segregation mechanisms of the constituent elements in the structure has been obtained by performing both energy dispersive X-ray analysis (EDXA) and X-ray photoelectron spectroscopy (XPS) measurements. AgGaSe2 thin films were deposited by using both electron-beam (e-beam) and sputtering techniques. In e-beam evaporated thin films, the effect of annealing on the structural and morphological properties of the deposited films has been studied by means of XRD, XPS, scanning electron microscopy (SEM) and EDXA measurements. Structural analysis has shown that samples annealed between 300 and 600 oC were in polycrystalline structure with co-existance of Ag, Ga2Se3, GaSe, and AgGaSe2. The variation of surface morphology, chemical composition and bonding nature of constituent elements on post-annealing has been determined by EDXA and XPS analyses. AgGaSe2 thin films were also prepared by using sputtering technique. XRD measurements have shown that the mono-phase AgGaSe2 structure is formed at annealing temperature of 600 oC. The crystal-field and spin-orbit splitting levels were resolved. These levels around 2.03 and 2.30 eV were also detected from the photospectral response measurements. Thin films of Ag-Ga-S (AGS) compound were prepared by using AgGaS2 single crystalline powder and deposition of the excess silver (Ag) intralayer with double source thermal evaporation method. As a consequence of systematic optimization of thickness of Ag layer, Ag(Ga,S) with the stoichiometry of AgGa5S8 and AgGaS2 were obtained and systematic study to obtain structural, electrical and optical properties was carried out.

A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.

A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.

CdSe thin films were deposited by thermal evaporation and e-beam evaporation techniques on to well cleaned glass substrates. Low dose of boron have been implanted on a group of samples. EDAX and X-ray patterns revealed that almost stoichiometric polycrystalline films have been deposited in (002) preferred orientation. An analysis of optical measurements revealed a sharp increase in absorption coefficient below 700 nm and existence of a direct allowed transition. The calculated band gap was around 1.7 eV. The room temperature conductivity values of the samples were found to be between 9.4 and 7.5x10-4 (&amp / #937 / -cm)-1 and 1.6x10-6 and 5.7x10-7 (&amp / #937 / -cm)-1for the thermally evaporated and e-beam evaporated samples respectively. After B implantation conductivity of these films increased 5 and 8 times respectively. Hall mobility measurements could be performed only on the thermally evaporated and B-implanted e-beam evaporated samples and found to be between 8.8 and 86.8 (cm2/V.s). The dominant conduction mechanism were determined to be thermionic emission above 250 K for all samples. Tunneling and v variable range hopping mechanisms have been observed between 150-240 K and 80- 140 K respectively. Photoconductivity &amp / #8211 / illumination intensity plots indicated two recombination centers dominating at the low and high regions of studied temperature range of 80-400 K. Photoresponse measurements have corrected optical band gap measurements by giving peak value at 1.72 eV.

A novel process for the fabrication of Long Range Surface Plasmon Polariton (LRSPP) waveguide based biosensors is presented herein. The structure of the biosensor is comprised of Au stripe waveguide devices embedded in thick CYTOP claddings with a SiO2 solvent diffusion barrier and etch-stop layer. The SiO2 layer is introduced to improve the end quality of Au waveguide structures, which previously deformed during the deposit of the upper cladding process and to limit the over-etching of CYTOP to create micro-fluidic channels. The E-beam evaporation method is adapted to deposit a thin SiO2 on the bottom cladding of CYTOP. A new micro-fluidic design pattern is introduced. Micro-fluidic channels were created on selective Au waveguides through O2 plasma etching. The presented data and figures are refractive index measurements of different materials, thickness measurements, microscope images, and AFM images. Optical power cutback measurements were performed on fully CYTOP-cladded symmetric LRSPP waveguides. The end-fire coupling method was used to excite LRSPP modes with cleaved polarization maintaining (PM) fibre. The measured mode power attenuation (MPA) was 6.7 dB/mm after using index-matched liquid at input and output fibre-waveguide interfaces. The results were compared with the theoretical calculations and simulations. Poor coupling efficiency and scattering due to the SiO2 are suspected for off-target measurements.