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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
531

THE RESPONSE OF TOMATO TO NITROGEN AND PHOSPHORUS IN THE SEEDLING STAGE.

Gaston, John Gregor. January 1984 (has links)
No description available.
532

ROOT DEVELOPMENT OF STEM CUTTINGS IN SELECTED PLANT SPECIES AS INFLUENCED BY BORON, CALCIUM, AND 1H-INDOLE-BUTANOIC ACID (IBA).

Livingston, Margaret. January 1985 (has links)
No description available.
533

THE PHYSIOLOGICAL CORRELATES OF INTERNAL AND EXTERNAL IMAGERY (MENTAL PRACTICE, ELECTROMYOGRAPHY).

Vigus, Tracy Lynn. January 1985 (has links)
No description available.
534

THE EFFECT OF CAFFEINE ON HEART RATE, RHYTHM AND BLOOD PRESSURE

Maune, Jerene Mary, 1953- January 1986 (has links)
No description available.
535

THE ROLE OF SEVERAL DRUGS AND COSOLVENTS ON INFUSION RELATED PHLEBITIS (THERMOGRAPHY)

Chawla, Monica Kapoor, 1950- January 1986 (has links)
No description available.
536

Fast-neutron-induced resistivity change in power MOSFETs

Safarjameh, Kourosh, 1961- January 1989 (has links)
Fast neutron irradiation tests were performed to determine the correlation of change of drain-source resistance and neutron fluence for power MOSFETs. The Objectives of the tests were: (1) to detect and measure the degradation of critical MOSFET device parameters as a function of neutron fluence (2) to compare the experimental results and the theoretical model. In general, the drain-source resistance increased from 1 Ohm to 100 Ohm after exposure to fast neutron fluence of 3 x 1014 neut/cm2, and decreased by a factor of five after high temperature annealing.
537

Simulation of radiation-induced parametric degradation in electronic amplifiers

Barbara, Nabil Victor, 1964- January 1989 (has links)
Many high performance amplifiers use power MOSFETs in their output stages, especially in operational amplifier applications whenever high current or power is needed. MOSFETs have advantages over bipolar transistors in amplifier output stage because MOSFETs are majority carrier devices. The result is wide frequency response, fast switching and better linearity than power bipolar transistors. But unlike bipolar circuits, which are relatively tolerant of ionizing radiation, MOSFETs may suffer severe parametric degradation at low total-dose levels. The effects of ionizing radiation on MOSFETs are discussed, and the performance of an amplifier circuit that uses a complementary MOSFET source follower in its output stage is simulated to examine the effect of MOSFET radiation damage on amplifier performance. An increase in power dissipation was the most significant degradation caused by ionizing radiation.
538

Effects of soil moisture stress and inter-plot competition on grain yield and other agronomic characteristics of sorghum and pearl millet

Rahman, Azizur, 1954- January 1989 (has links)
Sorghum (Sorghum bicolor L., Moench) and pearl millet (Pennisetum americanum L., Leeke) were intercropped under soil moisture non-stress and stress at Marana, Arizona during summer 1987. Effects of soil moisture stress and inter-row competition between sorghum and pearl millet on grain yield, 50% bloom, plant height, head length, head exsertion, 1000 grain weight, and number of effective tillers were evaluated. Interplot competition significantly reduced grain yield and head exsertion of peal millet. In sorghum, only plant height was significantly different due to competition. Agronomic characters were significantly different due to the effect of soil moisture stress except head length in pearl millet and head length, 1000 seed weight, and number of effective tillers in sorghum. Sorghum growing in a neighbor plot greatly suppressed millet grain yield under soil moisture stress. Relative yield total of the cereals under intercrop was less than unity under soil moisture stress.
539

Nitrogen fixation by alfalfa as affected by salt stress and nitrogen levels

Zhou, Maoqian, 1961- January 1989 (has links)
The growth and Nitrogen fixation by one low salt tolerant alfalfa (Medicago sativa L.) and two germination salt tolerant selections inoculated with were investigated at two salt levels (0, -0.6 Mpa) and two N rates (1, 5ppm) using a system which automatically recirculates a nutrient solution. The high level of salinity (-0.6 Mpa osmotic potential of culture solution) resulted in substantial reduction in the N fixation percentage and total fixed N. The effect of salinity was more pronounced for later cuttings than for the earlier cutting. The N fixation percentages were substantially decreased by increasing N level and the reduction was enhanced by time. The N treatment levels did not exhibit a significant effect on total fixed N. Cultivars did not differ in either growth or N fixation. However, the interaction of N and salinity significantly decreased the percentage and amount of N fixation.
540

Second light-scattering and Kerr-effect virial coefficients of molecules with linear and lower symmetry.

Couling, Vincent William. 01 October 2014 (has links)
Thesis (Ph.D.)-University of Natal, Pietermaritzburg, 1995.

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