xiv, 114 p. A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / Electron spin coherence can arise through a coherent superposition of two spin states in the conduction band of a semiconductor and can persist over remarkably long time and length scales. The robust nature of electron spin coherence makes it an excellent model system for exploring coherent quantum phenomena in semiconductors. This dissertation presents both spectral- and time-domain nonlinear optical studies of electron spin coherence through Λ-type three-level systems in two- and zero-dimensional semiconductor systems. The spectral domain study focuses on the experimental realization of electromagnetically induced transparency (EIT), a phenomenon that exploits destructive interference induced by the spin coherence. Coherent Zeeman Resonance (CZR), a precursor to EIT, is demonstrated in two 2D systems, a GaAs mixed-type quantum well (MTQW) and a modulation doped CdTe quantum well (QW). For these studies, Λ-type three-level systems are formed via dipole coupling of a trion to two electron spin states. The CZR response can be described qualitatively by effective density matrix equations. In addition, effects of manybody Coulomb interactions on CZR are investigated by varying the electron density in the MTQW via optical carrier injection. Time-domain studies based on transient differential transmission (DT) are carried out to explore the excitation, manipulation, and detection of electron spin coherence and to better understand how manybody interactions affect coherent nonlinear optical processes in semiconductors. While electron spin coherence can be formed and detected via resonant excitation of excitons or trions, a surprising observation is that injecting excitons into the 2D electron gas in a modulation doped CdTe QW can significantly alter the oscillatory nonlinear response of the electron spin coherence, while the response remains qualitatively unchanged when trions are injected. These behaviors are attributed to an interplay between manybody effects and carrier heating generated by trion formation from excitons. Finally, donor-bound electrons in GaAs are used as a model of localized electron spins. Spin decoherence of order 10 ns, limited by nuclear hyperfine interactions, is observed. Electron spin rotation induced by a nearly resonant laser pulse is also observed, opening the door for further work on mitigating electron spin decoherence time through optical spin echoes. / Adviser: Hailin Wang

xvii, 110 p. : ill. (some col.) / Electron spin states in semiconductors feature long coherence lifetimes, which have stimulated intense interest in the use of these spins for applications in spin based electronics and quantum information processing (QIP). A principal requirement for these spins to be viable candidates in QIP is the ability to coherently control the spins on timescales much faster than the decoherence times. The ability to optically control the spin state can meet this requirement. The spin states of electrons exhibit strong radiative coupling to negatively charged exciton (trion) states, and this radiative coupling makes coherent optical control of spin states possible. This dissertation presents experimental demonstration of coherent control of an electron spin ensemble in a two-dimensional electron gas in a CdTe quantum well. We present two complimentary techniques to optically manipulate these electron spins using a Raman transition. The first demonstration is with a single off-resonant ultrafast optical pulse. This ultrafast pulse acts like an effective magnetic field in the propagation direction of the optical pulse. The second experiment utilizes phase-locked Raman resonant pulse pairs to coherently rotate the quantum state, where the relative phase of the pulse pair sets the axis of rotation. The Raman pulse pair acts like a microwave field driving the spin states. This research demonstrates two significant contributions to the field of coherent optical interactions with semiconductors. First, we have advanced the potential use of electron spin ensembles in semiconductors for optics based quantum information processing hardware through our demonstration of coherent spin flips and complete coherent control. Second, we have experimentally realized full coherent control through the use of phase-locked Raman pulse pairs that overcomes inherent limitations of the single-pulse optical rotation technique, which is the current standard technique used in coherent control. This dissertation includes previously published and unpublished co-authored material. / Committee in charge: Dr. Miriam Deutsch, Chairperson; Dr. Hailin Wang, Advisor; Dr. Steven van Enk, Member; Dr. Raghuveer Parthasarathy, Member; Dr. Catherine Page, Outside Member

A novel experimental setup has been realized to measure weak magnetic moments which can be modulated at radio frequencies (~1–5 MHz). Using an optimized radio-frequency (RF) pickup coil and lock-in amplifier, an experimental sensitivity of 10 -15 Am2 corresponding to 10 -18 emu has been demonstrated with a one second time constant. The detection limit at room temperature is 9.3 10 -16 Am2/√Hz limited by Johnson noise of the coil. In order to demonstrate the sensitivity of this technique it was used to electrically detect the polarized spins in semiconductors in zero applied magnetic fields. For example in GaAs, the magnetic moment due to a small number (~ 7 x 108) of spin polarized electrons generated by polarization modulated optical radiation was detected. Spin polarization was generated by optical injection using circularly polarized light which is modulated rapidly using an electro-optic cell. The modulated spin polarization generates a weak time-varying magnetic field which is detected by the sensitive radio-frequency coil. Using a radio-frequency lock-in amplifier, clear signals were obtained for bulk GaAs and Ge samples from which an optical spin orientation efficiency of ~ 10–20% could be determined for Ge at 1342 nm excitation wavelength at 127 K. In the presence of a small external magnetic field, the signal decayed according to the Hanle Effect, from which a spin lifetime of 4.6 ± 1.0 ns for electrons in bulk Ge at 127 K was extracted. The spin dynamics in n-Ge was further explored and the temperature dependence of the spin lifetime was plotted for a temperature range of about 90 K to 180 K. The temperature dependence of the optical pumping efficiency was also measured though no quantitative conclusions could be derived. The signals observed for semi-insulating GaAs, n-GaAs, GaSb and CdTe which are direct gap semiconductors are much larger than expected (almost two orders of magnitude). An attempt was made to explain this unexpected behavior of these direct gap semiconductors using the spin hall effect.