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The mechanism of action of Chromatium Vinosum Flavocytochrome c-552Brown, Steven Louis January 1981 (has links)
No description available.
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ELECTRON LIFETIME AND ITS DEPENDENCE ON TEMPERATURE AND DOSE IN a-Se PHOTOCONDUCTORS2013 July 1900 (has links)
Electron transport in vacuum deposited a-Se films has been investigated by Interrupted-Field Time-of-Flight (IFTOF) transient photoconductivity experiments to examine the effect of sample temperature (T) and applied
electric field (F) on X-ray induced changes in the electron lifetime. Upon exposure to x-rays, the electron lifetime decreases. The decrease in normalized lifetime is almost linearly proportional to the absorbed dose, and is more significant at higher temperatures. Upon the cessation of x-ray irradiation, the lifetime recovers towards its equilibrium value through a structural relaxation process, and is characterized by a structural relaxation time. The structural relaxation time decreases with temperature in an Arrhenius fashion, and exhibits an activation energy that is roughly 1.4 eV. The structural relaxation time at room temperature (21 C) is 2 – 4 hrs whereas at 35 C, 6 – 10 mins. These
measurements are important in characterizing the charge collection efficiency of a-Se based x-ray detectors, and its dependence on x-ray exposure and temperature. The results indicate that the rate of change of electron lifetime per unit exposure is less than 2%/Gy.
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Microfabrication and characterization of carbon/molecule/metal molecular junctionsRu, Jie Unknown Date
No description available.
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Monte Carlo simulations of electron transport in bulk gallium nitrideKolnik, Jan 05 1900 (has links)
No description available.
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One-dimensional models of the transport of electrons in a quantum wireTajkowski, Kevin M. January 2001 (has links)
Although more emphasis is being placed on African Americans athletes, there are still disparities in the number of African American athletes compared to the number of African Americans in administrative positions. This study is based on the argument that supports the need for more African American in athletic administration positions, by examining the current hiring and retention of African American administrators and the critical issues underlying their employment.It is important to have more information readily available since there is such a large percent of African American athletes competing at institutions. Until the number of African American administrators is equitable to the number of participants creating revenue for their respective universities, there will always be a need for this study.This study utilized qualitative research methods to analyze interviews and survey data. The results of this study revealed that having role models, mentors, establishing a network, and enhancing enrollment and graduation rates of African Americans in graduate schools are key elements in increasing the numbers of African Americans in athletic administration positions. / Department of Physics and Astronomy
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Quantum transport of energetic electrons in ballistic nanostructuresHu, Hsiu-Lien January 2000 (has links)
The various electronic phenomena of electrons in the quasi-one-dimensional semiconducotor heterostructures have been largely investigated in the past research, due to its importance both on the theoretical understanding and the design of nanodevices. In particular, most research is currently based on the GaAs-AIGaAs material system with a 2-DEG interface. From the study of Hua Wu, following the Bohm's interpretation of quantum mechanics, energetic electrons approximately approach the classical behavior. The goal of this theoretical study is to investigate how the flow of energetic electrons may be controlled by the use of a tunable reflector. When encountering hard potential walls, energetic electrons in the nanostructure nearly follow the law of reflection. In addition, if the hard potential walls function as a reflector, the bouncing ball trajectory is also predicted. In this project, the fact that energetic electrons demonstrate semi-classical periodical flow motion is conceptually verified.The quantum wire (QW) with a tab and a notch nanostructure is selected as the practical model to achieve the project's goal. The resonant properties of the QW with a tab and the QW with a notch are individually investigated. The tight-binding recursive Green's function method is the theory underlying the numerical computation of the conductance in a nanodevice. / Department of Physics and Astronomy
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Electron transport through double quantum dots in an Aharonov-Bohm ringRoh, Chung-Hee. January 2008 (has links)
Quantum dots (QDs), which are formed by a double barrier resulting in resonant-state electrons, are one of the ideal experimental tools to confine electrons and to study the tunneling of an electron through a double barrier in a one-dimensional transmission channel. In our research, we have two laterally coupled QDs in an Aharonov-Bohm (AB) ring geometry in which the coupling between two dots can be controlled. We use the tight-binding model to compute the exact transmission amplitude of an electron through the discrete quasi-bound states in coupled QDs embedded in an AB ring. We study the effect of magnetic flux on the transmission as well as explore how the inter-dot coupling changes the resonant states in QDs. We confirm that the lead-dot couplings involve the lifetime of the quasi-bound states in a symmetrical interference experiment. By tracing the position of the resonances of quasi-bound states, we can predict the shift of bonding and antibonding states for both single and multiple state-identical QDs as a function of energy levels and inter-dot coupling parameters. / Electron transport and resonance phenomena through QDs -- The tight-binding model -- Electron transport in a double quantum dot -- Transmission throught multiple states in a coupled quantum dot. / Department of Physics and Astronomy
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Electron transport in semiconductor nanoconstrictons with and without an impurity in the channelAnduwan, Gabriel A. Y. January 1998 (has links)
The development of electronics has been growing at a fast rate in recent years. More and more ideas have been searched and are increasing at a faster rate. However, there is more detail work in the nanolevel or nanostructure yet to be understood. Thus, more and more semiconductor physicists have move to the new field of study in nanostructures. Nanostructures are the future of electronic devices. By understanding nanostructure electronic devices, electronics is the key for the progress of any modern equipment and advancement. This comes about when electronic transport of a nanostructure is thoroughly understood. Thus, future electronic devices can utilize the development of conductance through components having dimensions on the nanometer scale.The objective of the proposed research project is to study electronic transport in a ring with an infinite potential barrier at the center and a modulated external potential in one of the arms. The relative phase between the two paths in this structure can be controlled by applying electrostatic potential in one of the arms. One can compare these types of systems with optical interferometers, where the phase difference between the two arms is controlled by changing the refractive index of one arm through the electro-optic effect. By modulating the potential in one arm of the ring, we will study the interference effect on conductance. The method of finding the conductance of a nanostructure will be using the recursive Green's function method. This includes finding transverse eigenvalues, eigenfunctions, and hopping integrals to determine Green's propagators. A FORTRAN 77 computer program is used for numerical calculations.These remarkable ultra-small and ultra-clean quantum systems are currently achieved due to significant technological advancement in fabrication. For ultra-small quantum devices, the theoretical understanding of device performance must be based on quantum carrier transport of confined electrons and holes in the channel. This theoretical research will lead to the understanding of the effects of geometry and impurities on transport of the carriers in the nanochannels. / Department of Physics and Astronomy
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c Cytochromes as Electron Carriers in Microbial Chlorate RespirationSmedja Bäcklund, Anna January 2011 (has links)
Microbial respiration of oxochlorates is important for the biotreatment of effluents from industries where oxochlorates are produced or handled. Several bacterial species are capable to use perchlorate and/or chlorate as an alternative electron acceptor in absence of oxygen. The present study deals with the electron transport from the membrane-bound components to the periplasmic chlorate reductase, in the gram-negative bacterium Ideonella dechloratans. Both chlorate reductase and the terminal oxidase of I. dechloratans were found to utilize soluble c cytochromes as electron donors. For further investigation, two major heme-containing components were purified and characterized. The most abundant was a 9 kDa c-type cytochrome (class I), denoted cytochrome c-Id1. This protein was shown to serve as electron donor for both chlorate reductase, and for a terminal oxidase. The other major component was a 55 kDa homotetrameric cytochrome c', (class II). A function for this cytochrome could not be demonstrated but it does not appear to serve as electron donor to chlorate reductase. A gene predicted to encode a soluble c cytochrome was found in close proximity to the gene cluster for chlorate reduction. The predicted sequence did not match any of the cytochromes discussed above. The gene was cloned and expressed heterologously, and the resulting protein was investigated as a candidate electron donor for chlorate reductase. Electron transfer from this protein could not be demonstrated, suggesting that the gene product does not serve as immediate electron donor for chlorate reductase.
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Electron transport in nanoparticle single-electron transistorsLuo, Kang, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
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