<p>High quality perovskite manganites, La1_-xA_xMnO₃ (A = Ca, Sr, Ba) are very attractive materials due to their great application potential for magnetic memory, uncooled infrared (IR) microbolometer and spintronics devices. This thesis presents studies of the growth and material characterization (including structural, electrical, magnetic and noise) of epitaxial manganite films on Si and GaAs. Furthermore, investigations about strain effect on structural and electrical properties of manganites, and finally fabrication of self-supported free standing microstructures for uncooled IR bolometer are also demonstrated.</p><p>To obtain high quality epitaxial manganite films on semiconductor substrates at room temperature, using a combination of La_0.67Sr₀.₃₃MnO₃(LSMO) and La_0.67Ca_0.33MnO₃(LCMO) compounds, La_0.67(Sr,Ca)_0.33MnO₃ (LSCMO) films were successfully grown on Si substrates with Bi₄Ti₃O₁₂(BTO)/CeO₂/YSZ buffers by pulsed laser deposition (PLD) technique. Crystallographic relations between layers shows cube-on-cube for BTO/CeO2/YSZ/Si and diagonal-on-side for LSCMO films on BTO layer. 4.4 %K^-1maximum temperature coefficient of resistivity (TCR = 1/ρ·dρ/dT) and 2.9 %kOe^-1 colossal magnetoresistance (CMR) were obtained at room temperature. Assuming of a prototype of temperature sensor, 1.2 μK/√Hz of noise equivalent temperature difference (NETD) and 2.9×10⁸ cm√Hz/W of detectivity are expected to achieve at 294 K, 30 Hz. For GaAs substrates, using MgO buffer layer, LCMO films shows 9.0 %K^-1 of TCR at 223 K while LSMO exhibits 2 %K^-1 at 327 K.</p><p>Systematic strain effects on structural and electrical properties of La₀.₇₅Sr_0.25MnO₃ LSMO) films on BTO/CeO2/YSZ-buffered Si, Si_1-xGe_x/Si (compressive strain, x = 0.05-0.20) and Si_1-yC_y/Si (tensile, y = 0.01) were investigated. The strain induced from Si_1-xGe_x/Si and Si_0.99C_0.01/Si has a tendency to decrease the roughness of CMR films compared to Si sample. High resistivity and low TCR values are observed for Si_0.8Ge₀.₂/Si and Si_0.99C_0.01/Si samples due to excessive strains whereas Si₀.₉Ge_0.1/Si and Si_0.95Ge_0.05/Si show slight improvements of films quality and TCR value.</p><p>To fabricate LSCMO manganite bolometer on Si, wet etching with KOH and BHF and dry etching methods with Ar ion beam etching (IBE) were studied. For KOH wet etching, LSCMO films show high chemical resistance with lower than 0.2 nm/min of etch rate. BHF wet etching shows high etching selectivity over photoresist mask and silicon substrates. The etch rates for LSCMO and BTO layers are 22 and 17 nm/min. For Ar IBE, LSCMO films and oxide buffer layers show similar etch rates, 16-17 nm/min that are lower compared to 24 nm/min for Si.</p><p>Free standing, self-supported heteroepitaxial LSCMO/BTO/CeO₂/YSZ membranes for bolometer pixels on Si was successfully fabricated by Ar IBE and ICP etching techniques using a preannealed photoresist. The structural investigation by TEM revealed the sharp interfaces between layers. The electrical property of the free standing membrane was slightly degraded due to strain release and multi-step etching effect. These results demonstrate feasibility to use heteroepitaxial oxide structures as a thermally isolated membrane with conventional photoresist patterning.</p>

In this thesis the InSb(111), InAs(111) and GaSb(001) surfaces have been studied by means of time- and angle-resolved photoemission spectroscopy based upon the femtosecond laser system. The pump-and-probe technique allows to analyse both electron states in the valence band and normally unpopulated electron states above the valence band, which can be occupied by transiently excited carriers at the optically pumped surface. The life time of excited carriers is analysed by controlling over the time delay between pump and probe pulses. Experimental studies of the InSb(111) surface and comparison with a previously studied InSb(110) surface show electron excitations in the bulk region with a minor surface contribution. Time-resolved experiments of carrier dynamics at the polar InAs(111)A and InAs(111)B surfaces show about the same life time of excited carriers, while no populated states above the valence band maximum have been found at the InAs(111)A due to the charge removal. Surface intergap electron states have been found at the GaSb(001) surface located at ~250 meV above the valence band maximum. Angle-resolved experiments showed a strong confinement of this state at the centre of the surface Brillouin zone. A new two dimensional angle-resolved multi-anode analyser for the femtosecond laser photoemission setup has been constructed. The analyser can resolve a cone opening angle of ~1º at a drift distance of ~0.5 m with an energy resolution of ~125 meV. A continuous series of binary system SrTiO3–PbZr0.52Ti0.48O3 has been grown by pulsed laser deposition (PLD) on sapphire substrate with crystalline quality control by x-ray diffraction (XRD). The maximum tunability has been tailored to room temperature, where STO�PZT (71/29) composition shows superior performance. A PbZr0.52Ti0.48O3 thin film pressure sensor has been fabricated by PLD and characterised by XRD and electrical measurements. The piezoelectric constant was found to be ~20 % higher compared to the bulk ceramics. A ferroelectric thin film electro-optical cell Na0.5K0.5NbO3/La0.5Sr0.5CoO3 (NKN/LSCO) on sapphire has been fabricated by PLD. Refractive indices and electro-optical coefficient of the cell were characterised by prism coupling refractometry. The tunability of the PLD fabricated 2 μm slot NKN thin film interdigital capacitor has been found ~23 % at 40 V bias voltage and frequency 1 MHz. / QC 20101015

<p>The work describes the development of a reliable device for profiling anion beam in the intensity cross section. A sensor head consisting of a Faradaycup in combination with a Channel Electron Multiplier was designedand built together with electronics including power supply and front endelectronics. The design was chosen considering financial and long term lifeaspects. Testing, first calibration and error analysis were done using the ionbeam facilities where the unit is supposed to be installed permanently. Theprofiling system performed as designed and the profile of the ion beam couldbe measured reliably with an accuracy down to the femto ampere range.</p>

The tokamak is so far the most promising magnetic configuration for achieving a net production of fusion energy. The D-T fusion reactions result in 3.5 MeV alpha-particles, which may destabilize Alfvén eigenmodes through wave-particle interaction. These instabilities redistribute the alpha-particles from the central region of the plasma towards the edge, where they are thermalized, and hence result in a reduced heating efficiency. The high-energy alpha-particles may even be thrown out of the plasma and may damage the wall. To investigate the destabilization of Alfvén eigenmodes by high-energy ions, ion cyclotron resonance heating (ICRH) and neutral beam injection (NBI) are often used to create a high-energy tail on the distribution function. The ICRH does not only produce high-energy anisotropic tails, it also decorrelates the wave-particle interaction with the Alfvén eigenmodes. Without decorrelation of the wave-particle interaction an ion will undergo a superadiabatic oscillation in phase space and there will be no net transfer of energy to the mode. For the thermal ions the decorrelation from collisions dominates while for the high-energy ions the decorrelation from ICRH dominates. As the unstable modes grow up, the gradients in phase space, which drive the mode, are reduced, resulting in a weaker drive. The dynamics of the system becomes non-linear due to a continuous restoration of the gradients by D-T reactions and ICRH. In this thesis the non-linear dynamics of toroidal Alfvén eigenmodes (TAEs) during ICRH has been investigated using the SELFO code. The SELFO code, which calculates the distribution function during ICRH self-consistently using a Monte-Carlo metod, has been upgraded to include interactions with TAEs. The fast decay of the mode amplitude as the ICRH is switched off, which is seen in experiments, as well as the oscillation of the mode amplitude as the distribution function is repetetively built up by the ICRH and flattened by the TAE has been reproduced using numerical simulations. In the presence of several unstable modes the dynamics become more complicated. The redistribution of an alpha-particle slowing down distribution function as well as the reduced heating efficiency in the presence of several modes has also been investigated. / QC 20100628

The subject of this thesis is a new chip to substrate interconnection technique using self-aligning elastic chip sockets. This work was focused on the technology steps which are necessary to fulfill in order to realize the suggested technique. Elastic chip sockets offer a solution for several assembly and packaging challenges, such a thermo-mechanical mismatch, effortless rework, environmental compatibility, high interconnection density, high frequency signal integrity, etc. Two of the most challenging technology aspects, metallization and etching of the silicone elastomer were studied, but also, air bubble free casting of the silicone elastomer was taken into consideration. Elastic chip sockets and single elastic micro-bump contacts of different shapes and sizes were manufactured and characterized. The contact resistance measurements revealed that the elastic micro-bump contacts manufactured by using the developed methods require less than one tenth of the contact force to achieve the same low contact resistance as compared to commercial elastic interconnection structures. The analysis and measurements of the high frequency properties of the elastic micro-bump structures have shown that they can operate up to several tens of GHz without a serious degradation of the signal quality. The same methods were applied to manufacture very high density contact area array (approximately 80000 connections/cm2), which until now was achieved only using so called chip-first techniques. The low contact resistance, the absence of environmentally harmful materials, no need of soldering, easy rework as well as capability of very high interconnecting density and very high frequency compatibility, indicates a high potential of this technique for assembly and packaging. Moreover, the presented technology of the silicone elastomer micromachining (metallization and RIE in particular) can be used for manufacturing of other microstructures, like chemical or biological micro reactors. / QC 20110114

Detta examensarbete undersöker effekter av en elektromagnetisk puls på IC-kretsar. För att kunna utvärdera inverkan har ett testobjekt, innehållande komponenter som skall testas, konstruerats. Detta testobjekt består av batteri, en enkel komponent och last. Ett pulsaggregat och en antenn användes för att generera de elektromagnetiska pulser som testobjektet utsattes för. Resultaten visar att inverkan på de testade komponenterna är möjlig. Inverkan visade sig vara beroende av bl.a. avståndet till antennen och den tid som testobjektet utsätts för störning. Störning har också utförts vid olika polariseringar. Ett mål var att kunna jämföra en elektromagnetisk störning via en antenn med en trådbunden störning, där pulsen genererats från samma pulsaggregat. Försöken att utföra trådbunden störning av testobjektet misslyckades då pulsen inte var tillräckligt bra. Detta examensarbete är en del av en artikel, High Power Ultra Wide Band and Vircator Source-Victim Experiment, som presenterades vid konferensen EMC Europe 2008. / This paper studies the effects of an electromagnetic pulse on IC-circuits. A DUT (device under test) has been constructed so that the effects of the pulse can be evaluated. The DUT consists of a battery, a load and the component, which is to be tested. A high voltage power supply and an antenna were used to generate the pulses that the DUT were exposed to. The results show that the effects were dependent on, among others, the distance between the antenna and the DUT and the time during which the DUT was exposed to the pulse. The DUT has also been exposed to different polarisations of the pulse. One of the objectives of the study was to compare the difference between a pulse from an antenna and from a wire. This was to be done with the same high voltage power supply. Attempts to use a wire, for injecting the pulse, were unsuccessful since the damped pulse was not satisfying. This paper is a part of a paper, High Power Ultra Wide Band and Vircator Source-Victim Experiment, that was presented at the conference EMC Europe 2008.

The work describes the development of a reliable device for profiling anion beam in the intensity cross section. A sensor head consisting of a Faradaycup in combination with a Channel Electron Multiplier was designedand built together with electronics including power supply and front endelectronics. The design was chosen considering financial and long term lifeaspects. Testing, first calibration and error analysis were done using the ionbeam facilities where the unit is supposed to be installed permanently. Theprofiling system performed as designed and the profile of the ion beam couldbe measured reliably with an accuracy down to the femto ampere range.

<p>The subject of this thesis is a new chip to substrate interconnection technique using self-aligning elastic chip sockets. This work was focused on the technology steps which are necessary to fulfill in order to realize the suggested technique. Elastic chip sockets offer a solution for several assembly and packaging challenges, such a thermo-mechanical mismatch, effortless rework, environmental compatibility, high interconnection density, high frequency signal integrity, etc.</p><p>Two of the most challenging technology aspects, metallization and etching of the silicone elastomer were studied, but also, air bubble free casting of the silicone elastomer was taken into consideration. Elastic chip sockets and single elastic micro-bump contacts of different shapes and sizes were manufactured and characterized.</p><p>The contact resistance measurements revealed that the elastic micro-bump contacts manufactured by using the developed methods require less than one tenth of the contact force to achieve the same low contact resistance as compared to commercial elastic interconnection structures.</p><p>The analysis and measurements of the high frequency properties of the elastic micro-bump structures have shown that they can operate up to several tens of GHz without a serious degradation of the signal quality.</p><p>The same methods were applied to manufacture very high density contact area array (approximately 80000 connections/cm2), which until now was achieved only using so called chip-first techniques.</p><p>The low contact resistance, the absence of environmentally harmful materials, no need of soldering, easy rework as well as capability of very high interconnecting density and very high frequency compatibility, indicates a high potential of this technique for assembly and packaging.</p><p>Moreover, the presented technology of the silicone elastomer micromachining (metallization and RIE in particular) can be used for manufacturing of other microstructures, like chemical or biological micro reactors.</p>

<p>Detta examensarbete undersöker effekter av en elektromagnetisk puls på IC-kretsar.</p><p>För att kunna utvärdera inverkan har ett testobjekt, innehållande komponenter som skall testas, konstruerats. Detta testobjekt består av batteri, en enkel komponent och last. Ett pulsaggregat och en antenn användes för att generera de elektromagnetiska pulser som testobjektet utsattes för. Resultaten visar att inverkan på de testade komponenterna är möjlig. Inverkan visade sig vara beroende av bl.a. avståndet till antennen och den tid som testobjektet utsätts för störning. Störning har också utförts vid olika polariseringar.</p><p>Ett mål var att kunna jämföra en elektromagnetisk störning via en antenn med en trådbunden störning, där pulsen genererats från samma pulsaggregat. Försöken att utföra trådbunden störning av testobjektet misslyckades då pulsen inte var tillräckligt bra.</p><p>Detta examensarbete är en del av en artikel, <em>High Power Ultra Wide Band </em>and <em>Vircator Source-Victim Experiment</em>, som presenterades vid konferensen EMC Europe 2008.</p> / <p>This paper studies the effects of an electromagnetic pulse on IC-circuits. A DUT (device under test) has been constructed so that the effects of the pulse can be evaluated. The DUT consists of a battery, a load and the component, which is to be tested. A high voltage power supply and an antenna were used to generate the pulses that the DUT were exposed to. The results show that the effects were dependent on, among others, the distance between the antenna and the DUT and the time during which the DUT was exposed to the pulse. The DUT has also been exposed to different polarisations of the pulse.</p><p>One of the objectives of the study was to compare the difference between a pulse from an antenna and from a wire. This was to be done with the same high voltage power supply. Attempts to use a wire, for injecting the pulse, were unsuccessful since the damped pulse was not satisfying.</p><p>This paper is a part of a paper, <em>High Power Ultra Wide Band</em> and <em>Vircator Source-Victim Experiment</em>, that was presented at the conference EMC Europe 2008.</p>

Control of MHD instabilities using a conducting wall together with external magnetic fields is an important route to improved performance and reliability in fusion devices. Active control of MHD modes is of interest for both the Advanced Tokamak and the Reversed Field Pinch (RFP) configurations. A wide range of unstable, current driven MHD modes is present in the RFP. An ideally conducting wall facing the plasma can in principle provide stabilization to these modes. However, a real, resistive wall characterized by a wall field diffusion time, cannot stabilize the ideal MHD modes unless they rotate with Alfvénic velocity, which is usually not the case. With a resistive wall, the ideal modes are converted into resistive wall modes (RWM) with growth rates comparable to the inverse wall time. Resistive wall modes have been studied in the EXTRAP T2R thin shell RFP device. Growth rates have been measured and found in agreement with linear MHD stability calculations. An advanced system for active control has been developed and installed on the EXTRAP T2R device. The system includes an array of 128 active saddle coils, fully covering the torus surface. Experiments on EXTRAP T2R have for the first time demonstrated simultaneous active suppression of multiple independent RWMs. In experiments with a partial array, coupling of different modes due to the limited number of feedback coils has been observed, in agreement with theory. Different feedback strategies, such as the intelligent shell, the rotating shell, and mode control have been studied. Further, feedback operation with different types of magnetic field sensors, measuring either the radial or the toroidal field components have been compared / QC 20100929