Thin film uniform and exponential distributed RC networks were fabricated and the network responses were investigated. It was necessary to take dielectric loss into consideration in the theoretical analysis before a close agreement could be obtained between the theoretical and experimental network responses. / Thesis / Master of Engineering (ME)

The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential to achieve such cost savings though (i) large-area deposition onto low-cost foreign substrates, (ii) more streamlined processing, (iii) monolithic cell interconnection, and very efficient use of the expensive semiconductor material. Polycrystalline silicon (poly-Si) on glass is a promising technology for the cost-effective large volume production of PV modules since it (i) makes use of an abundant raw material, (ii) is non-toxic, (iii) does not suffer from light-induced degradation, and (iv) does not rely on TCO layers. Usually plasma enhanced chemical vapour deposition (PECVD) is used for the layer formation. This thesis explores the use of e-beam evaporation as deposition method since it is potentially much faster and cheaper than PECVD. The resulting solar cells are referred to as EVA (from EVAporation). Two inherent shunting mechanisms in EVA cells are demonstrated to be shunting through sub-micron sized pinholes when the back electrode is deposited and shunting between the emitter and the absorber layer at the glass-side electrode. Through the improved understanding of these shunting mechanisms it was possible to develop a suitable metallisation scheme for EVA cells using an aligned deposition of emitter and back surface field line contacts and a specially developed shunt mitigation etching technique. For the first time appreciable efficiencies of up to 5.2% were demonstrated on this material. It was also shown that only very lightly doped absorber layers can lead to the required high short-circuit currents in EVA cells. The resulting cells are currently completely limited by space charge region recombination occurring with comparatively low ideality factors of only ~ 1.4 This thesis also demonstrates the usefulness of Jsc-Suns measurements and investigates optical loss mechanisms in the current devices. Advanced modelling of distributed series resistance effects, influencing Suns-Voc, m-Voc and Jsc-Suns curves, is employed. PC1D modelling is used to extract relevant device parameters. In this work it was found that the diffusion length in the best EVA cells is longer than the absorber layer and that insufficient light trapping is currently the major hurdle to higher cell efficiencies. From the obtained results it can be concluded that EVA solar cells are promising candidates for the low-cost and high-volume production of solar modules.

A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type Si substrate. The MIS device was rapid thermal annealed at 1000°C. Capacitance-voltage (C-V) measurements showed that, after rapid thermal annealing at 1000°C for 300s in Ar, the trilayer device exhibited charge storage property. The charge storage effect was not observed in a device with a bilayer structure without the Ge middle layer. With increasing rapid thermal annealing time from 0 to 400s, the width of the C-V hysteresis of the trilayer device increased significantly from 1.5V to ~11V, indicating that the charge storage capability was enhanced with increasing annealing time. High-resolution transmission electron microscopy results confirmed that with increasing annealing time, the 2.4nm amorphous middle Ge layer crystallized gradually. More Ge nanocrystals were formed and the crystallinity of the Ge layer improved as the annealing time was increased. When the measurement temperature was increased from –50°C to 150°C, the width of the hysteresis of the MIS device reduced from ~10V to ~6V. This means that the charge storage capability of the trilayer structure decreases with increasing measurement temperature. This is due to the fact that the leakage current in the trilayer structure increases with increasing measurement temperature. / Singapore-MIT Alliance (SMA)

In this research work, porous films on aluminum foil, with vertical through and through pores, were fabricated. The films were anodized at different applied voltages and the conditions were reported. In some cases, aluminum foil films were anodized under constant current conditions. Thicker aluminum films, referred to as aluminum tape in this thesis, were also anodized to get good porous films. While the porous alumina films using aluminum tape produced pores with good uniformity, the films did not produce through and through pores. Porous alumina films were also prepared on aluminum evaporated ITO substrate. The films on ITO substrate were different from the porous alumina films using aluminum foil/tape. In case of ITO substrate based films, an additional condition, temperature was also varied. The anodization process on ITO substrate based films was done at lower temperatures in order to reduce the effect of high currents on the process. The SEM images for different anodization conditions were compared and the porosity of films was calculated. CdS was electrodeposited inside porous alumina. D.C as well as a.c. voltages were applied and duration of the process was varied to study their effect on film morphology and the thickness of the deposited CdS. The current-voltage characteristics of the CdS-deposited alumina films were plotted and the phase of the electrodeposited CdS was found to be hexagonal using XRD.

The cost of photovoltaic electricity needs to be significantly reduced in order to achieve a high electricity market penetration. Thin-film solar cells have good potential to achieve such cost savings though (i) large-area deposition onto low-cost foreign substrates, (ii) more streamlined processing, (iii) monolithic cell interconnection, and very efficient use of the expensive semiconductor material. Polycrystalline silicon (poly-Si) on glass is a promising technology for the cost-effective large volume production of PV modules since it (i) makes use of an abundant raw material, (ii) is non-toxic, (iii) does not suffer from light-induced degradation, and (iv) does not rely on TCO layers. Usually plasma enhanced chemical vapour deposition (PECVD) is used for the layer formation. This thesis explores the use of e-beam evaporation as deposition method since it is potentially much faster and cheaper than PECVD. The resulting solar cells are referred to as EVA (from EVAporation). Two inherent shunting mechanisms in EVA cells are demonstrated to be shunting through sub-micron sized pinholes when the back electrode is deposited and shunting between the emitter and the absorber layer at the glass-side electrode. Through the improved understanding of these shunting mechanisms it was possible to develop a suitable metallisation scheme for EVA cells using an aligned deposition of emitter and back surface field line contacts and a specially developed shunt mitigation etching technique. For the first time appreciable efficiencies of up to 5.2% were demonstrated on this material. It was also shown that only very lightly doped absorber layers can lead to the required high short-circuit currents in EVA cells. The resulting cells are currently completely limited by space charge region recombination occurring with comparatively low ideality factors of only ~ 1.4 This thesis also demonstrates the usefulness of Jsc-Suns measurements and investigates optical loss mechanisms in the current devices. Advanced modelling of distributed series resistance effects, influencing Suns-Voc, m-Voc and Jsc-Suns curves, is employed. PC1D modelling is used to extract relevant device parameters. In this work it was found that the diffusion length in the best EVA cells is longer than the absorber layer and that insufficient light trapping is currently the major hurdle to higher cell efficiencies. From the obtained results it can be concluded that EVA solar cells are promising candidates for the low-cost and high-volume production of solar modules.

Orientador: Carlos José Leopoldo Constantino / Banca: José Alberto Giacometti / Banca: Henrique de Santana / Banca: Eduardo René Perez Gonzalez / Banca: Marcelo Mulato / Banca: Rogério Pinto Mota / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: Neste trabalho foram preparados filmes finos de ftalocianinas de zinco (ZnPc) e de níquel (NiPc) através da técnica de evaporação térmica à vácuo (PVD - physical vapor deposition) em diversas espessuras e em escala nanométrica com o objetivo de determinar a arquitetura molecular destes filmes bem como suas propriedades ópticas e elétricas. Em última análise buscam-se gerar subsídios para as possíveis aplicações, especialmente dispositivos eletrônicos a base de semicondutores orgânicos e sensores de gás. A ZnPc e a NiPc em pó foram caracterizadas utilizando-se as técnicas de termogravimetria (TG), calorimetria exploratória diferencial (DSC) e os filmes PVD por espectroscopias de absorção no ultravioleta-visível (UV-vis), no infravermelho com transformada de Fourier (FTIR), espalhamento Raman, difração de raios-X, microscopias óptica e de força atômica (AFM) e caracterização elétrica cc (tensão x corrente). Os resultados mostraram que é possível a fabricação de filmes PVD de ZnPc e NiPc, uma vez que estas moléculas não são termicamente degradadas durante o processo de evaporação térmica a vácuo, e que o crescimento dos filmes pode ser controlado em escala nanométrica para ambos os materiais. Em termos estruturais, os filmes PVD de ZnPc e NiPc são cristalinos (forma α) e possuem as moléculas arranjado-se na forma de agregados e monômetros e ordenadas com o anel macrociclo inclinado em relação à superfície do substrato. Tais agregados podem ser vistos em escala nanométrica, porém, em escala micrométrica os filmes apresentam-se morfologicamente homogêneos. Em relação às propriedades ópticas e elétricas, observou-se que ambos os filmes PVD absorvem na região do visível com a ZnPc apresentando fotoluminescência quando irradiado com laser 785 nm. A condutividade elétrica é de 1,2x'10 POT. -10' S/m para a ZnPc e de 72x'10 POT... (Resumo completo, clicar acesso eletrônico abaixo) / Abstract: In this work thin films of phthalocyanines of zinc (ZnPc) and nickel (NiPc) were fabricated through the vacuum thermal evaporation technique (PVD - physical vapor deposition) for different thicknesses at nanometric scale with the objective of determining the molecular architecture of these films as well as their optical and electrical properties. The final idea is to generate subsidies for applications of these films in electronic devices based on organic semiconductors and gas sensors. The PVD films were characterized using thermogravimetry (TG), differential scanning calorimetry (DSC), ultraviolet-visible (UV-vis) and Fourier transform infrared (FTIR) absorption spectroscopies, Raman scattering, X-ray diffraction, optical and atomic force (AFM) microscopies, and electrical characterization (tension x current dc). The results showed that the fabrication of ZnPc and NiPc films is possible since these molecules are not thermally degraded during the process of vacuum thermal evaporation and that the growth of the films can be controlled at nanometric scale for both materials. Structurally, the PVD films of ZnPc and NiPc possess the molecules organized with the macrocycle ring tilted in relation to the substrate surface. They are crystalline (α form) and possess molecular aggregates in the form of dimmers or higher order of aggregates and monomers. Such aggregates can be seen at nanometric scale, however, at micrometric scale the films are morphologically homogeneous. In relation to the optical and electrical properties, it was observed that boh PVD films absorb in the visible region with the ZnPc presenting photoluminescence when irradiated with the 785 nm laser line. The electric conductivity at 1,2x'10 POT. -10' S/m for ZnPc and 72x'10 POT. -10' S/m for NiPc. They also presented photoconductivity with the ZnPc more photoconductor than NiPc. Finally, after thermal treatment... (Complete abstract click electronic access below) / Doutor

Made available in DSpace on 2014-06-11T19:32:51Z (GMT). No. of bitstreams: 0 Previous issue date: 2009-06-26Bitstream added on 2014-06-13T19:43:38Z : No. of bitstreams: 1 zanfolim_aa_dr_bauru.pdf: 2078904 bytes, checksum: 89fecc6406c0fe251fffb9f3101d20dd (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Neste trabalho foram preparados filmes finos de ftalocianinas de zinco (ZnPc) e de níquel (NiPc) através da técnica de evaporação térmica à vácuo (PVD - physical vapor deposition) em diversas espessuras e em escala nanométrica com o objetivo de determinar a arquitetura molecular destes filmes bem como suas propriedades ópticas e elétricas. Em última análise buscam-se gerar subsídios para as possíveis aplicações, especialmente dispositivos eletrônicos a base de semicondutores orgânicos e sensores de gás. A ZnPc e a NiPc em pó foram caracterizadas utilizando-se as técnicas de termogravimetria (TG), calorimetria exploratória diferencial (DSC) e os filmes PVD por espectroscopias de absorção no ultravioleta-visível (UV-vis), no infravermelho com transformada de Fourier (FTIR), espalhamento Raman, difração de raios-X, microscopias óptica e de força atômica (AFM) e caracterização elétrica cc (tensão x corrente). Os resultados mostraram que é possível a fabricação de filmes PVD de ZnPc e NiPc, uma vez que estas moléculas não são termicamente degradadas durante o processo de evaporação térmica a vácuo, e que o crescimento dos filmes pode ser controlado em escala nanométrica para ambos os materiais. Em termos estruturais, os filmes PVD de ZnPc e NiPc são cristalinos (forma α) e possuem as moléculas arranjado-se na forma de agregados e monômetros e ordenadas com o anel macrociclo inclinado em relação à superfície do substrato. Tais agregados podem ser vistos em escala nanométrica, porém, em escala micrométrica os filmes apresentam-se morfologicamente homogêneos. Em relação às propriedades ópticas e elétricas, observou-se que ambos os filmes PVD absorvem na região do visível com a ZnPc apresentando fotoluminescência quando irradiado com laser 785 nm. A condutividade elétrica é de 1,2x'10 POT. -10' S/m para a ZnPc e de 72x'10 POT... / In this work thin films of phthalocyanines of zinc (ZnPc) and nickel (NiPc) were fabricated through the vacuum thermal evaporation technique (PVD - physical vapor deposition) for different thicknesses at nanometric scale with the objective of determining the molecular architecture of these films as well as their optical and electrical properties. The final idea is to generate subsidies for applications of these films in electronic devices based on organic semiconductors and gas sensors. The PVD films were characterized using thermogravimetry (TG), differential scanning calorimetry (DSC), ultraviolet-visible (UV-vis) and Fourier transform infrared (FTIR) absorption spectroscopies, Raman scattering, X-ray diffraction, optical and atomic force (AFM) microscopies, and electrical characterization (tension x current dc). The results showed that the fabrication of ZnPc and NiPc films is possible since these molecules are not thermally degraded during the process of vacuum thermal evaporation and that the growth of the films can be controlled at nanometric scale for both materials. Structurally, the PVD films of ZnPc and NiPc possess the molecules organized with the macrocycle ring tilted in relation to the substrate surface. They are crystalline (α form) and possess molecular aggregates in the form of dimmers or higher order of aggregates and monomers. Such aggregates can be seen at nanometric scale, however, at micrometric scale the films are morphologically homogeneous. In relation to the optical and electrical properties, it was observed that boh PVD films absorb in the visible region with the ZnPc presenting photoluminescence when irradiated with the 785 nm laser line. The electric conductivity at 1,2x'10 POT. -10' S/m for ZnPc and 72x'10 POT. -10' S/m for NiPc. They also presented photoconductivity with the ZnPc more photoconductor than NiPc. Finally, after thermal treatment... (Complete abstract click electronic access below)

In dieser Arbeit werden kalt-abgeschiedene Mehrkomponentenschichtelektroden hin-sichtlich ihrer elektrokatalytischen Eigenschaften untersucht. Die Mehrkomponenten-schichten aus Gold, Nickel und ggf. Antimon werden auf einem Kohlenstoffträgermaterial abgeschieden. Dabei handelt es sich um Metallkomponenten, die sich unter ther-modynamischen Bedingungen nicht mischen. Unter UHV-Bedingungen wird ein hochdispergierter bzw. amorpher Zustand erzwungen. Die frisch hergestellte Mehrkomponentenschicht ist elektrochemisch inert. Zyklovoltammetrische Untersuchungen führen zu dem Schluß, daß sich die Oberflächenschicht im elektrochemischen Experiment verändert. Die Elektrooxidation der Alkohole Methanol, Ethanol und Ethylenglykol in KOH-Lösung tritt erst nach einer Aktivierungsphase auf. Die elektrokatalytischen Eigenschaften der reinen Metalle treten zutage. Mittels der in situ Infrarotspektroskopie werden Formiat, Acetat und Glykolat als Oxidationsprodukte der obengenannten Alkohole identifiziert. Oberflächen-Ramanmessungen werden unter der Fragestellung durchgeführt, ob die kalt-abgeschiedenen Schichten einen Oberflächenverstärkungseffekt (SERS-Effekt) zeigen: Es werden Ramanmessungen von Pyridin als Sondenmolekül in KOH-Lösung an Mehrkomponentenschichtelektroden und an massiven Mehrkomponentenelektroden durchgeführt. / The electrooxidation of methanol, ethanol and ethylene glycol at cold deposited trimetallic thin layers of gold, nickel and antimony on glassy carbon in contact with an alkaline electrolyte solution was studied with cyclic voltammetry and in situ infrared reflection absorption spectroscopy. A new procedure of spectra acquisition resulting in an improved suppression of spurious bands caused by volatile components in the sample chamber of the infrared spectrometer was employed. Formate, acetate and glycolate are detected as oxidation products. The thin layer electrodes are also investigated with Raman spectroscopy (surface enhanced Raman spectroscopy), whereby pyridine is used as probe molecule.

In dieser Arbeit werden kalt-abgeschiedene Mehrkomponentenschichtelektroden hin-sichtlich ihrer elektrokatalytischen Eigenschaften untersucht. Die Mehrkomponenten-schichten aus Gold, Nickel und ggf. Antimon werden auf einem Kohlenstoffträgermaterial abgeschieden. Dabei handelt es sich um Metallkomponenten, die sich unter ther-modynamischen Bedingungen nicht mischen. Unter UHV-Bedingungen wird ein hochdispergierter bzw. amorpher Zustand erzwungen. Die frisch hergestellte Mehrkomponentenschicht ist elektrochemisch inert. Zyklovoltammetrische Untersuchungen führen zu dem Schluß, daß sich die Oberflächenschicht im elektrochemischen Experiment verändert. Die Elektrooxidation der Alkohole Methanol, Ethanol und Ethylenglykol in KOH-Lösung tritt erst nach einer Aktivierungsphase auf. Die elektrokatalytischen Eigenschaften der reinen Metalle treten zutage. Mittels der in situ Infrarotspektroskopie werden Formiat, Acetat und Glykolat als Oxidationsprodukte der obengenannten Alkohole identifiziert. Oberflächen-Ramanmessungen werden unter der Fragestellung durchgeführt, ob die kalt-abgeschiedenen Schichten einen Oberflächenverstärkungseffekt (SERS-Effekt) zeigen: Es werden Ramanmessungen von Pyridin als Sondenmolekül in KOH-Lösung an Mehrkomponentenschichtelektroden und an massiven Mehrkomponentenelektroden durchgeführt. / The electrooxidation of methanol, ethanol and ethylene glycol at cold deposited trimetallic thin layers of gold, nickel and antimony on glassy carbon in contact with an alkaline electrolyte solution was studied with cyclic voltammetry and in situ infrared reflection absorption spectroscopy. A new procedure of spectra acquisition resulting in an improved suppression of spurious bands caused by volatile components in the sample chamber of the infrared spectrometer was employed. Formate, acetate and glycolate are detected as oxidation products. The thin layer electrodes are also investigated with Raman spectroscopy (surface enhanced Raman spectroscopy), whereby pyridine is used as probe molecule.

Jádrem této disertační práce bylo studovat optické a elektrické charakteristiky tenkovrstvých elektroluminiscenčních součástek řízených střídavým proudem (ACTFEL) a zejména vliv procesu stárnutí luminiforů na jejich optické a elektrické vlastnosti. Cílem této studie měl být příspěvek ke zvýšení celkové účinnosti luminoforů, vyjádřené pomocí jasu, účinnosti a stability. Vzhledem k tomu, že současnou dominantní technologií plochých obrazovek je LCD, musí se další alternativní technologie plošných displejů porovnávat s LCD. Výhodou ACTFEL displejů proti LCD je lepší rozlišení, větší teplotní rozsah činnosti, větší čtecí úhel, či možnost čtení při mnohem vyšší intenzitě pozadí. Na druhou stranu je jejich nevýhodou vyšší energetická náročnost, problém s odpovídající barevností tří základních barev a podstatně vyšší napětí nutné pro činnost displeje. K dosažení tohoto cíle jsme provedli optická, elektrická a optoelektrická měření ACTFEL struktur a ZnS:Mn luminoforů. Navíc jsme studovali vliv dotování vrstvy pomocí KCl na chování mikrostruktury a na elektroluminiscenční vlastnosti (zejména na jas a světelnou účinnost) ZnS:Mn luminoforů. Provedli jsme i některá, ne zcela obvyklá, měření ACTFEL součástek. Vypočítali jsme i rozptylový poměr nabitých barevných center a simulovali transportní charakteristiky v ACTFEL součástkách. Studovali jsme vliv stárnutí dvou typů ZnS:Mn luminoforů (s vrstvou napařenou či získanou pomocí epitaxe atomových vrstev) monitorováním závislostí svítivost-napětí (L-V), velikost vnitřního náboje - elektrické pole luminoforu (Q-Fp) a kapacitance-napětí (C-V) ve zvolených časových intervalech v průběhu stárnutí. Provedli jsme krátkodobá i dlouhodobá měření a pokusili jsme se i o vizualizaci struktury luminoforu se subvlnovým rozlišením pomocí optického rastrovacího mikroskopu pracujícího v blízkém poli (SNOM). Na praktickém případu zeleného Zn2GeO4:Mn (2% Mn) ACTFEL displeje, pracujícího při 50 Hz, jsme také studovali stabilitu svítivosti pomocí měření závislosti svítivosti na napětí (L-V) a světelné účinnosti na napětí (eta-V). Přitom byl zhodnocen význam těchto charakteristik. Nezanedbatelnou a neoddělitelnou součástí této práce je i její pedagogický aspekt. Předložený text by mohl být využit i jako učebnice pro studenty na mé univerzitě v Lybii.