- About
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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
provided by the
Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
Search results
Showing 211 to 220 of 761 (0.021 seconds)Spelling suggestions: "subject:"fieldeffect"" "subject:"fields:effect""
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Zinc oxide MESFET transistors : a thesis submitted in partial fulfilment of the requirements of the dgree of Master of Engineering at the University of Canterbury /Turner, Gary Chandler. January 2009 (has links)
Thesis (M.E.)--University of Canterbury, 2009. / Typescript (photocopy). "November 2009." Includes bibliographical references (leaves 73-78). Also available via the World Wide Web.
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| 212 |
Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement /Kong, Frederick. January 2002 (has links) (PDF)
Thesis (Ph.D.) - University of Queensland, 2003. / Includes bibliography.
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| 213 |
Process development, characterization, transient relaxation, and reliability study of HfO₂ and HfSi(x)O(y) gate oxide for 45nm technology and beyondAkbar, Mohammad Shahariar. Lee, Jack Chung-Yeung, January 2005 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Supervisor: Jack C. Lee. Vita. Includes bibliographical references.
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| 214 |
An analysis on the simulation of the leakage currents of independent double gate SOI MOSFET transistors a thesis presented to the faculty of the Graduate School, Tennessee Technological University /Moolamalla, Himaja Reddy, January 2009 (has links)
Thesis (M.S.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on June 29, 2010). Bibliography: leaves 56-66.
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| 215 |
On the inversion and accumulation layer mobilities in N-channel trench DMOSFETS /Ng, Chun Wai. January 2005 (has links)
Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2005. / Includes bibliographical references. Also available in electronic version.
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| 216 |
Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD /Feng, Zhihong. January 2006 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.
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| 217 |
Three dimensional multi-gates devices and circuits fabrication, characterization, and modeling /Wu, Xu Sheng. January 2005 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2005. / Includes bibliographical references. Also available in electronic version.
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| 218 |
Linearity analysis of single and double-gate silicon-on-insulator metal-oxide-semiconductor-field-effect-transistorMa, Wei. January 2004 (has links)
Thesis (M.S.)--Ohio University, August, 2004. / Title from PDF t.p. Includes bibliographical references (p. 64-66)
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| 219 |
Study of germanium MOSFETs with ultrathin high-k gate dielectricsChen, Jer-hueih, Banerjee, Sanjay, Guha, Supratik, January 2004 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisors: Sanjay K. Banerjee and Supratik Guha. Vita. Includes bibliographical references.
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| 220 |
Schottky field effect transistors and Schottky CMOS circuitry /Vega, Reinaldo A. January 2006 (has links)
Thesis (M.S.)--Rochester Institute of Technology, 2006. / Typescript. Includes bibliographical references.
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