In this thesis we describe in detail the Monte Carlo simulation (LVDG4) built to interpret the experimental data collected by LVD and to measure the muon-induced neutron yield in iron and liquid scintillator. A full Monte Carlo simulation, based on the Geant4 (v 9.3) toolkit, has been developed and validation tests have been performed. We used the LVDG4 to determine the active vetoing and the shielding power of LVD. The idea was to evaluate the feasibility to host a dark matter detector in the most internal part, called Core Facility (LVD-CF). The first conclusion is that LVD is a good moderator, but the iron supporting structure produce a great number of neutrons near the core. The second conclusions is that if LVD is used as an active veto for muons, the neutron flux in the LVD-CF is reduced by a factor 50, of the same order of magnitude of the neutron flux in the deepest laboratory of the world, Sudbury. Finally, the muon-induced neutron yield has been measured. In liquid scintillator we found $(3.2 \pm 0.2) \times 10^{-4}$ n/g/cm$^2$, in agreement with previous measurements performed at different depths and with the general trend predicted by theoretical calculations and Monte Carlo simulations. Moreover we present the first measurement, in our knowledge, of the neutron yield in iron: $(1.9 \pm 0.1) \times 10^{-3}$ n/g/cm$^2$. That measurement provides an important check for the MC of neutron production in heavy materials that are often used as shield in low background experiments.

Lo scopo del Progetto Extreme Energy Events (EEE) e` di studiare raggi cosmici di energia estrema, eventi molto rari ma ricchi di informazioni. La grande difficolta` nell'affrontare la fisica dei raggi cosmici di altissima energia risiede nel flusso estremamente basso con cui tali particelle giungono sulla terra. Si utilizzano infatti reti molto estese di rivelatori: le informazioni che si possono ricavare derivano dalla rivelazione delle particelle secondarie prodotte nello sviluppo di sciami estesi di raggi cosmici primari che interagiscono con l'atmosfera terrestre. Il Progetto EEE prevede di dislocare su tutto il territorio italiano un array di telescopi (costituiti da Multi Gap Resistive Plate Chambers) per raggi cosmici secondari. Il lavoro presentato riguarda la simulazione Monte Carlo degli sciami e lo studio delle loro caratteristiche, la simulazione delle prestazioni di griglie di rivelazione differenti ed infine l'analisi dei primi dati raccolti nei telescopi di Bologna, con il conseguente confronto con la simulazione.

The atmospheric muon charge ratio, defined as the number of positive over negative charged muons, is an interesting quantity for the study of high energy hadronic interactions in atmosphere and the nature of the primary cosmic rays. The measurement of the charge ratio in the TeV muon energy range allows to study the hadronic interactions in kinematic regions not yet explored at accelerators. The OPERA experiment is a hybrid electronic detector/emulsion apparatus, located in the underground Gran Sasso Laboratory, at an average depth of 3800 meters water equivalent (m.w.e.). OPERA is the first large magnetized detector that can measure the muon charge ratio at the LNGS depth, with a wide acceptance for cosmic ray muons coming from above. In this thesis, the muon charge ratio is measured using the spectrometers of the OPERA detector in the highest energy region. The charge ratio was computed separately for single and for multiple muon events, in order to select different primary cosmic ray samples in energy and composition. The measurement as a function of the surface muon energy is used to infer parameters characterizing the particle production in atmosphere, that will be used to constrain Monte Carlo predictions. Finally, the experimental results are interpreted in terms of cosmic ray and particle physics models.

The LISA Pathfinder geodesic explorer mission for gravitational wave astronomy aims to measure a residual differential acceleration noise approaching the femto-m/s^2/Hz^1/2 levels needed for eLISA. This measurement is complicated by a large, roughly nm/s^2, stable differential gravitational acceleration that must be actively compensated in order to hold the test particles centred inside an orbiting apparatus. The actuation force applied to compensate this effect introduces a dominant source of force noise in the mission noise budget. To suppress this noise source and avoid actuation instabilities, a “free-fall” actuation control scheme has been designed: actuation is limited to brief impulses, with test masses in free fall in between two “kicks”, with this actuation-free motion then analysed for the remaining sources of acceleration ultra noise. In this work, we present the results from an extensive on-ground torsion pendulum test of this free-fall technique, which to date allows an equivalent acceleration noise measurement at the 100 fm/s^2/sqrt(Hz), a factor 3 above the LISA Pathfinder spec. We will discuss both experimental and analysis limitations to the ground experiment and some implications for the flight test.

The coalescence of binary neutron stars (BNS) is amongst the most promising sources for advanced gravitational wave (GW) detectors. The forthcoming addition of the advanced Virgo interferometer to the LIGO detector network will greatly improve the estimation of GW characteristics and therefore the capabilities to test features in the GW signal emitted by the coalescence of a NS binary. Such an observation can constrain the equation of state of these stars in at least two ways: by investigating smaller effects on top of the signal from the inspiral phase due to the tidal deformability of the components and by characterizing the emission from the possible highly excited NS remnant after the merger. Both methods promise to probe matter up to yet unknown and unexplored supranuclear densities, provided that the signal-to-noise ratio (SNR) at which the single GW is detected is sufficiently high or that the results from more detections can be combined together. Depending on mass and Equation of State (EoS) of the NS progenitors, the final fate of the merger can produce either a prompt collapse to black hole (BH) or a massive NS remnant. In the latter case, the merger remnant could be a short-lived, hypermassive NS (HMNS) collapsing to a BH within a few tens of ms after merger, or a long-lived NS, which in turn can be either supramassive (SMNS), i.e. collapsing to a BH on much longer timescales of order of seconds, or even a stable NS. These remnants will be highly excited, showing transient nonaxisymmetric deformations and quadrupolar oscillations, which are expected to emit GWs peaked in the frequency range around 2-3 kHz. The observation of these Post Merger (PM) fingerprints, would allow to constrain the EoS and at the same time to estimate combinations of stellar parameters, such as mass and radius of the two objects. With these motivations, my PhD thesis addressed the development of a new data analysis tool in order to investigate the GW signal emitted during the PM phase following a NS coalescence. The analysis procedure is developed inside the framework of the Coherent Wave Burst (cWB) pipeline which is employed by LIGO and Virgo collaboration to search for burst signals, i.e. it makes minimal assumption on the GW morphology and provides a robust coverage of generic GW transients.

The present thesis is focused on the study of Organic Semiconducting Single Crystals (OSSCs) and crystalline thin films. In particular solution-grown OSSC, e.g. 4-hdroxycyanobenzene (4HCB) have been characterized in view of their applications as novel sensors of X-rays, gamma-rays, alpha particles radiations and chemical sensors. In the field of ionizing radiation detection, organic semiconductors have been proposed so far mainly as indirect detectors, i.e. as scintillators or as photodiodes. I first study the performance of 4HCB single crystals as direct X-ray detector i.e. the direct photon conversion into an electrical signal, assessing that they can operate at room temperature and in atmosphere, showing a stable and linear response with increasing dose rate. A dedicated study of the collecting electrodes geometry, crystal thickness and interaction volume allowed us to maximize the charge collection efficiency and sensitivity, thus assessing how OSSCs perform at low operating voltages and offer a great potential in the development of novel ionizing radiation sensors. To better understand the processes generating the observed X-ray signal, a comparative study is presented on OSSCs based on several small-molecules: 1,5-dinitronaphthalene (DNN), 1,8-naphthaleneimide (NTI), Rubrene and TIPS-pentacene. In addition, the proof of principle of gamma-rays and alpha particles has been assessed for 4HCB single crystals. I have also carried out an investigation of the electrical response of OSSCs exposed to vapour of volatile molecules, polar and non-polar. The last chapter deals with rubrene, the highest performing molecular crystals for electronic applications. We present an investigation on high quality, millimeter-sized, crystalline thin films (10 – 100 nm thick) realized by exploiting organic molecular beam epitaxy on water-soluble substrates. Space-Charge-Limited Current (SCLC) and photocurrent spectroscopy measurements have been carried out. A thin film transistor was fabricated onto a Cytop® dielectric layer. The FET mobility exceeding 2 cm2/Vs, definitely assess the quality of RUB films.

This thesis work is focused on the use of selected core-level x-ray spectroscopies to study semiconductor materials of great technological interest and on the development of a new implementation of appearance potential spectroscopy. Core-level spectroscopies can be exploited to study these materials with a local approach since they are sensitive to the electronic structure localized on a chemical species present in the sample examined. This approach, in fact, provides important micro-structural information that is difficult to obtain with techniques sensitive to the average properties of materials. In this thesis work we present a novel approach to the study of semiconductors with core-level spectroscopies based on an original analysis procedure that leads to an insightful understanding of the correlation between the local micro-structure and the spectral features observed. In particular, we studied the micro-structure of Hydrogen induced defects in nitride semiconductors, since the analysed materials show substantial variations of optical and electronic properties as a consequence of H incorporation. Finally, we present a novel implementation of soft x-ray appearance potential spectroscopy, a core-level spectroscopy that uses electrons as a source of excitation and has the great advantage of being an in-house technique. The original set-up illustrated was designed to reach a high signal-to-noise ratio for the acquisition of good quality spectra that can then be analyzed in the framework of the real space full multiple scattering theory. This technique has never been coupled with this analysis approach and therefore our work unite a novel implementation with an original data analysis method, enlarging the field of application of this technique.

III-nitride materials are very promising for high speed electronics/optical applications but still suffer in performance due to problems during high quality epitaxial growth, evolution of dislocation and defects, less understanding of fundamental physics of materials/processing of devices etc. This thesis mainly focus on GaN based heterostructures to understand the metal-semiconductor interface properties, 2DE(H)G influence on electrical and optical properties, and deep level states in GaN and InAlN, InGaN materials. The detailed electrical characterizations have been employed on Schottky diodes at GaN and InAl(Ga)N/GaN heterostructures in order to understand the metal-semiconductor interface related properties in these materials. I have observed the occurrence of Schottky barrier inhomogenity, role of dislocations in terms of leakage and creating electrically active defect states within energy gap of materials. Deep level transient spectroscopy method is employed on GaN, InAlN and InGaN materials and several defect levels have been observed related to majority and minority carriers. In fact, some defects have been found common in characteristics in ternary layers and GaN layer which indicates that those defect levels are from similar origin, most probably due to Ga/N vacancy in GaN/heterostructures. The role of structural defects, roughness has been extensively understood in terms of enhancing the reverse leakage current, suppressing the mobility in InAlN/AlN/GaN based high electron mobility transistor (HEMT) structures which are identified as key issues for GaN technology. Optical spectroscopy methods have been employed to understand materials quality, sub band and defect related transitions and compared with electrical characterizations. The observation of 2DEG sub band related absorption/emission in optical spectra have been identified and proposed for first time in nitride based polar heterostructures, which is well supported with simulation results. In addition, metal-semiconductor-metal (MSM)-InAl(Ga)N/GaN based photodetector structures have been fabricated and proposed for achieving high efficient optoelectronics devices in future.

III-nitrides are wide-band gap materials that have applications in both electronics and optoelectronic devices. Because to their inherent strong polarization properties, thermal stability and higher breakdown voltage in Al(Ga,In)N/GaN heterostructures, they have emerged as strong candidates for high power high frequency transistors. Nonetheless, the use of (Al,In)GaN/GaN in solid state lighting has already proved its success by the commercialization of light-emitting diodes and lasers in blue to UV-range. However, devices based on these heterostructures suffer problems associated to structural defects. This thesis primarily focuses on the nanoscale electrical characterization and the identification of these defects, their physical origin and their effect on the electrical and optical properties of the material. Since, these defects are nano-sized, the thesis deals with the understanding of the results obtained by nano and micro-characterization techniques such as atomic force microscopy(AFM), current-AFM, scanning kelvin probe microscopy (SKPM), electron beam induced current (EBIC) and scanning tunneling microscopy (STM). This allowed us to probe individual defects (dislocations and cracks) and unveil their electrical properties. Taking further advantage of these techniques,conduction mechanism in two-dimensional electron gas heterostructures was well understood and modeled. Secondarily, origin of photoluminescence was deeply investigated. Radiative transition related to confined electrons and photoexcited holes in 2DEG heterostructures was identified and many body effects in nitrides under strong optical excitations were comprehended.

Organic semiconductors have great promise in the field of electronics due to their low cost in term of fabrication on large areas and their versatility to new devices, for these reasons they are becoming a great chance in the actual technologic scenery. Some of the most important open issues related to these materials are the effects of surfaces and interfaces between semiconductor and metals, the changes caused by different deposition methods and temperature, the difficulty related to the charge transport modeling and finally a fast aging with time, bias, air and light, that can change the properties very easily. In order to find out some important features of organic semiconductors I fabricated Organic Field Effect Transistors (OFETs), using them as characterization tools. The focus of my research is to investigate the effects of ion implantation on organic semiconductors and on OFETs. Ion implantation is a technique widely used on inorganic semiconductors to modify their electrical properties through the controlled introduction of foreign atomic species in the semiconductor matrix. I pointed my attention on three major novel and interesting effects, that I observed for the first time following ion implantation of OFETs: 1) modification of the electrical conductivity; 2) introduction of stable charged species, electrically active with organic thin films; 3) stabilization of transport parameters (mobility and threshold voltage). I examined 3 different semiconductors: Pentacene, a small molecule constituted by 5 aromatic rings, Pentacene-TIPS, a more complex by-product of the first one, and finally an organic material called Pedot PSS, that belongs to the branch of the conductive polymers. My research started with the analysis of ion implantation of Pentacene films and Pentacene OFETs. Then, I studied totally inkjet printed OFETs made of Pentacene-TIPS or PEDOT-PSS, and the research will continue with the ion implantation on these promising organic devices.