Global ETD Search

461	Enhanced device performance of III-nitride HEMTs on sapphire substrates by MOCVD / Feng, Zhihong. January 2006 (has links) Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.
462	Experimental investigation of the epitaxial lateral overgrowth of gallium nitride and simulation of the gallium nitride metalorganic chemical vapor deposition process Ju, Wentao. January 2003 (has links) Thesis (Ph.D.)--Ohio University, March, 2003. / Title from PDF t.p. Includes bibliographical references (leaves 147-151)
463	Theoretical study of GaAs-based quantum dot lasers and microcavity light emitting diodes Huang, Hua, Deppe, Dennis G. January 2004 (has links) (PDF) Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Dennis G. Deppe. Vita. Includes bibliographical references.
464	Untersuchungen in ternären chalkogenhaltigen Systemen Ag-Ga-Te und Sn-Sb-Se Shen, Jun. Unknown Date (has links) (PDF) Universiẗat, Diss., 2002--Osnabrück.
465	Tunable all-optical delay via nonlinear optical processes in semiconductor quantum wells / Sakar, Susanta Kumar. January 2006 (has links) Thesis (Ph. D.)--University of Oregon, 2006. / Typescript. Includes vita and abstract. Includes bibliographical references (leaves 128-137). Also available for download via the World Wide Web; free to University of Oregon users.
466	Atomic diffusion and interface electronic structure of III-V heterojunctions and their dependence on epitaxial growth transitions and annealing Smith, Phillip E., January 2007 (has links) Thesis (Ph. D.)--Ohio State University, 2007. / Title from first page of PDF file. Includes bibliographical references (p. 157-165).
467	Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction Quang, Le Hong, Chua, Soo-Jin, Fitzgerald, Eugene A. 01 1900 (has links) We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods grown on n-GaN sample using hydrothermal synthesis at low temperature (100°). The ZnO nanorod layer was vertically grown from the GaN sample, having the diameter 100nm and length 2µm. Then, an insulator layer for electrical isolation was deposited on the top of ZnO nanorod layer by using spin coating method. A metal layer (gold) was finally deposited on the top. The I-V dependences show a rectifying diode like behavior with a leakage current of 2.10⁻⁵ A and a threshold voltage of about 3V. Depend on the thickness of the insulator, the I-V dependences of the n-ZnO/n-GaN heterostructure was varied from rectifying behavior to Ohmic and nearly linear. / Singapore-MIT Alliance (SMA) Gallium Nitride Metal Insulator Semiconductor structure Nanostructure Zinc compounds
468	Contribution à la conception de circuits intégrés AsGa modélisation du MESFET AsGa et étude des effets de propagation et de couplage dans les CI logiques BFL AsGa, caractérisation en bruit des transistors hyperfréquence faible bruit AsGa. Chusseau, Laurent. January 1986 (has links) Th. Doct.--Electronique--Paris 11, 1986.
469	Élaboration par OM-CVD du semi-conducteur composite désordonné GaAs : (SiC, H) : corrélations entre sa structure hétérogène et ses propriétés électroniques. Maury, Francis, January 1900 (has links) Th.--Sci. des matér.--Toulouse--I.N.P., 1985. N°: 95.
470	Sur l'élaboration de couches minces épitaxiques d'arséniure de galliun par dépôt chimique en phase vapeur à partir des composés de coordination monochlorodialkylgallium-trialkylarsine. Zaouk, Aref, January 1900 (has links) Th.--Sci. phys.--Toulouse--I.N.P., 1983. N°: 68.

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