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This thesis describes the synthesis and reactivity of NHC-stabilized Lewis-acid/Lewis-base adducts of alanes and gallanes (NHC = Me2ImMe, iPr2Im, iPr2ImMe, Dipp2Im, Dipp2ImH). As this field of research has developed tremendously, especially in the last five years, the first chapter provides an overview of the current state of knowledge. The influence of electronegative π-donor-substituents on the stability of the NHC alane adducts is examined in chapter 2. For this purpose, the carbene stabilized alanes (NHC)∙AlH3 (NHC = iPr2Im, Dipp2Im) were reacted with secondary amines of different steric demand and with phenols. The π-donor substituents saturate the Lewis acidic aluminium center and coordination of a second NHC-ligand was not observed. The strongly electronegative N and O substituents increase the Lewis acidity of the aluminium atom, which leads to stronger Al-CNHC as well as Al-H bonds, which inhibits the insertion of the carbene into the Al-H bond. In Chapter 3 the development of the synthesis and reactivity of carbene-stabilized gallanes is presented. The synthesis of NHC gallane adducts (NHC)∙GaH3, (NHC)∙GaH2Cl and (NHC)∙GaHCl2 and their reactivity towards NHCs and cAACMe were investigated in detail. The reaction of the mono- and dichlorogallanes (NHC)∙GaH2Cl and (NHC)∙GaHCl2 (NHC = iPr2ImMe, Dipp2Im) with cAACMe led to insertion of the cAACMe with formation of chiral and achiral compounds depending on the sterically demand of the used NHC. Furthermore, the formation of bis-alkylgallanes was observed for the insertion of two equivalents of cAACMe with release of the NHC ligand. Chapter 4 describes investigations concerning the synthesis and reactivity of NHC-stabilized iodoalanes and iodogallanes, which are suitable for the formation of cationic aluminium and gallium dihydrides. The reaction of (NHC)∙EH2I (E = Al, Ga) stabilized by the sterically less demanding NHCs (NHC = Me2ImMe, iPr2Im, iPr2ImMe) with an additional equivalent of the NHC led to the formation of the cationic bis-NHC aluminium and gallium dihydrides [(NHC)2∙AlH2]+I- and [(NHC)2∙GaH2]+I-. Furthermore, the influence of the steric demand of the used NHC was investigated. The adduct (Dipp2Im)∙GaH2I was reacted with an additional equivalent of Dipp2Im. Due to the bulk of the NHC used, rearrangement of one of the NHC ligands from normal to abnormal coordination occurred and the cationic gallium dihydride [(Dipp2Im)∙GaH2(aDipp2Im)] was isolated. Chapter 5 of this thesis reports investigations concerning the reduction of cyclopentadienyl-substituted alanes and gallanes with singlet carbenes. NHC stabilized pentamethylcyclopentadienyl aluminium and gallium dihydrides (NHC)∙Cp*MH2 (E = Al, Ga) were prepared by the reaction of (AlH2Cp*)3 with the corresponding NHCs or by the salt elimination of (NHC)∙GaH2I with KCp*. The gallane adducts decompose at higher temperatures with reductive elimination of Cp*H and formation of Cp*GaI. . The reductive elimination is preferred for sterically demanding NHCs (Dipp2Im > iPr2ImMe > Me2ImMe). In addition, NHC ring expansion of the backbone saturated carbene Dipp2ImH was observed for the reaction of the NHC with (AlH2Cp*)3, which led to (RER-Dipp2ImHH2)AlCp*. Furthermore, the reactivity of the adducts (NHC)∙Cp*EH2 (E = Al, Ga) towards cAACMe was investigated. The reaction of the alane adducts stabilized by the sterically more demanding NHCs iPr2ImMe and Dipp2Im afforded the exceptionally stable insertion product (cAACMeH)Cp*AlH V-10 with liberation of the NHC. The reaction of the gallium hydrides (NHC)∙Cp*GaH2 with cAACMe led to the reductive elimination of cAACMeH2 and formation of Cp*GaI. A variety of neutral and cationic carbene-stabilized alanes and gallanes are presented in this work. The introduction of electronegative π-donor substituents (Cl-, I-, OR-, NR2-) and the investigations on the thermal stability of these compounds led to the conclusion that the stability of alanes and gallanes increased significantly by such a substitution. Investigations on the reactivity of the NHC adducts towards cAACMe resulted in various insertion products of the carbene into the Al-H or Ga-H bonds and the first cAACMe stabilized dichlorogallane was isolated. Furthermore, a first proof was provided that carbenes can be used specifically for the (formal) reduction of group 13 hydrides of the higher homologues. Thus, the synthesis of Cp*GaI from the reaction of (NHC)∙Cp*GaH2 with cAACMe was developed. In the future, this reaction pathway could be of interest for the preparation of other low-valent compounds of aluminium and gallium. / Die vorliegende Arbeit befasst sich mit der Synthese und Reaktivität NHC stabilisierter Lewis-Säuren/Lewis-Basen Addukte von Alanen und Galanen. Da sich dieses Forschungsgebiet insbesondere in den letzten fünf Jahren rasant entwickelt hat, wird im ersten Kapitel dieser Arbeit eine Übersicht über den gegenwärtigen Kenntnisstand gegeben. Nachdem in vorangegangenen Arbeiten in der Gruppe gezeigt werden konnte, dass NHC-substituierte Alane (NHC)∙AlH3 eine begrenzte Stabilität bezüglich einer möglichen Eliminierung von Dihydroaminal NHC-H2 bzw. der Ringerweiterung oder Ringöffnung des NHC-Liganden aufweisen, wird in Kapitel 2 der Arbeit der Einfluss elektronegativer π-Donor-Substituenten am Aluminium auf die Stabilität der dargestellten NHC-Alan-Addukte untersucht. Dazu wurden die Carben stabilisierten Alane (NHC)∙AlH3 (NHC = iPr2Im, Dipp2Im) mit sekundären Aminen unterschiedlichen sterischen Anspruchs und Phenolen umgesetzt. Die π-Donor Substituenten sättigen das Lewis-saure Aluminiumzentrum ab, sodass eine Koordination eines zweiten NHC-Liganden nicht möglich ist. Ferner erhöhen die stark elektronegativen N- und O-Substituenten die Lewis-Acidität des Aluminiumatoms, das zu stärkeren Al-CNHC, aber auch Al-H-Bindungen führt und vermutlich deshalb die Insertion des Carbens in diese Bindung erschwert ist. Kapitel 3 beschreibt die Entwicklung der Synthese von Carben-stabilisierten Gallanen und Untersuchungen zu deren Reaktivität. Es wurde die Darstellung der NHC-Gallan-Addukte und ihre Reaktivität gegenüber NHCs und cAACMe im Detail untersucht. Durch die Substitution der Hydrid-Substituenten durch Chloride konnte mit zunehmendem Chlorierungsgrad eine erhöhte Stabilität der Addukte festgestellt werden. Die Reaktion von cAACMe mit den NHC-stabilisierten Gallanen führt zur Insertion des cAACMe in die Ga-H-Bindung unter Ausbildung chiraler und achiraler Insertionsprodukten, sowie der zweifachen Insertion von cAACMe unter Abspaltung des NHC-Liganden und Bildung von Bisalkylgallanen. Kapitel 4 beschreibt Untersuchungen zur Synthese und Reaktivität Carben-stabilisierter Iodtriele, welche zur Darstellung kationischer Aluminium- und Galliumdihydride geeignet sind. Die Reaktion der NHC-Iodotriele (NHC)∙EH2I (E = Al, Ga), welche durch weniger sterisch anspruchsvollen NHCs stabilisiert werden, mit einem zusätzlichen Äquivalent des entsprechenden NHCs führt zur Bildung der kationischen bis-NHC-Aluminium- und Galliumdihydride [(NHC)∙MH2]+I. Um den Einfluss des sterischen Anspruchs des NHCs zu untersuchen, wurde das Addukt (Dipp2Im)∙GaH2I mit einem zusätzlichen Äquivalent Dipp2Im umgesetzt. Aufgrund der Sterik der verwendeten Carbene führte dies zur Umlagerung eines NHCs von normaler zu abnormaler Koordination unter Bildung von [(Dipp2Im)∙GaH2(aDipp2Im)]I. Im fünften Kapitel der Arbeit werden Untersuchungen zur Reduktion Cp*-substituierter Triele mit Carbenen beschrieben. Die Darstellung NHC-stabilisierter Cp* -Alane- und Gallane (NHC)∙Cp*MH2 (M = Al, Ga) erfolgte durch die direkte Umsetzung von (AlH2Cp*)3 mit den entsprechenden NHCs, bzw. durch Salzeliminierung ausgehend von (NHC)∙GaH2I mit KCp*. Die Gallan-Addukte zersetzen sich bei höheren Temperaturen unter reduktiver Eliminierung von Cp*H und Bildung von Cp*GaI. Die reduktive Eliminierung findet bevorzugt für sterisch anspruchsvolle NHCs statt. Darüber hinaus wurde eine NHC Ringerweiterungsreaktion des im Rückgrat gesättigten Carbens Dipp2ImH bei der Reaktion mit (AlH2Cp*)3 unter Ausbildung von (RER-Dipp2ImHH2)AlCp*. Darüber hinaus wurde die Reaktivität der Addukte (NHC)∙Cp*EH2 (E = Al. Ga) gegenüber cAACMe untersucht. Die Reaktion der durch die sterisch anspruchsvolleren NHCs iPr2ImMe und Dipp2Im stabilisierten Addukte mit cAACMe führte zur Bildung des außergewöhnlich stabilen Insertionsproduktes (cAACMeH)Cp*AlH unter Abspaltung des NHC-Liganden. Die Reaktion der Galliumhydride (NHC)∙Cp*GaH2 mit cAACMe führte stattdessen direkt zur reduktiven Eliminierung von cAACMeH2 unter Ausbildung von Cp*GaI.Im Rahmen dieser Arbeit wurden neutrale und kationische Carben-stabilisierte Alane und Gallane eingehend untersucht. Durch das Einführen elektronegativer π-Donor-Substituenten und Untersuchungen zur thermischen Belastbarkeit dieser Verbindungen wurde nachgewiesen, dass sich die Stabilität der Alane bzw. Gallane durch eine derartige Substitution deutlich erhöht. Untersuchungen zur Reaktivität der NHC-Addukte gegenüber cAACMe brachte diverse Insertionsprodukte des Carbens in Al-H bzw. Ga-H-Bindungen hervor. Ferner konnte das erste cAACMe-stabilisierte Dichlorogalliumhydrid dargestellt werden. Darüber hinaus wurde ein erster Nachweis erbracht, dass Carbene gezielt zur (formalen) Reduktion von Hydriden der höheren Homologen der Gruppe 13 verwendet werden können. So wurde die Synthese von Cp*GaI aus der Reaktion von (NHC)∙Cp*GaH2 mit cAACMe entwickelt. In Zukunft könnte dieser Reaktionspfad zur Darstellung niedervalenter Verbindungen der Triele Aluminium und Gallium von Interesse sein.

Im Rahmen der vorliegenden Arbeit wurden Dibortetrahalogenide dargestellt, deren Eigenschaften strukturell sowie spektroskopisch analysiert und deren Reaktivität gegenüber Lewis-basischen Hauptgruppenelementverbindungen untersucht. Durch anschließende Reaktivitätsstudien konnten unter anderem neuartige Diborene dargestellt und analysiert werden. Weiterhin wurde die Verbindungsklasse der Elementhalogenide der Gruppe 13 in der Oxidationsstufe +2 (B, Ga, In) und +3 (In) bezüglich ihrer Reaktivität gegenüber Übergangsmetall Lewis-Basen untersucht. Die gebildeten, neuartigen Bindungsmodi der Gruppe 13 Elemente am Übergangsmetall wurden strukturell, spektroskopisch sowie quantenchemisch analysiert. / As a part of the present work diborontetrahalides were synthesized, analyzed and their reactivity was investigated towards Lewis-basic main group compounds. Subsequent reactivity studies were performed and novel Diborenes were synthesized and analyzed. Furthermore the reactivity of group 13 elemental halides in the oxidation state +2 (B, Ga, In) and +3 (In) was investigated towards Lewis-basic transition metal complexes. The novel bonding motifs of the group 13 elements at the metal center were investigated structurally, spectroscopically and by quantum chemical calculations.

Despite recent advances, radiopharmaceuticals to detect and characterize bacterial infections have a number of limitations. Many of the clinically approved radiopharmaceutical agents are not specific to bacterial infections and accumulate at lesions of inflammation. Hence, new approaches are necessary to detect bacteria with high specificity and selectivity. A library of desferrioxamine B (DFO) derivatives were prepared to create radiolabeled siderophores to create a bacteria-specific imaging probe by exploiting the mechanism bacteria use to scavenge iron, which plays a key role in bacterial growth and biofilm formation Compounds were synthesized using two convenient carbamate forming strategies in 30% to 92% yield. The cold and radioactive gallium (67Ga) complexes were prepared and characterized and their uptake by S. aureus bacteria were assessed in vitro and in vivo. In vivo studies revealed that 67GaDFOethoxycarbamate had uptake comparable to GaDFO that was blockable, showing the compound was actively taken up via the siderophore pathway. In vivo studies in a mouse model resulted in a good infected to non-infected thigh ratio (11:1) and non-specific uptake by the GI tract. Bioorthogonal chemistry was also explored as an approach for imaging infection using trans-cyclooctene (TCO) functionalized vancomycin and a tetrazine functionalized 67GaDFO (67GaDFO-Tz) complex.2,3 In vitro results revealed that allowing vancomycin-TCO to bind S. aureus prior to the addition of 67GaDFO-Tz (pretargeting) showed higher (63%) uptake than with a conjugate formed prior to incubation with the bacteria (direct targeting, 28%). For the bioorthogonal approach, the distribution of the 67GaDFO-Tz was assessed in a S. aureus infection murine model, which showed significant uptake of 67GaDFO-Tz in the GI tract 1 h post intravenous injection. However, uptake in the infected joint was evident at 71 h post infection. The data suggests targeting bacteria using TCO-labeled antibiotics and radiolabeled tetrazines is a feasible strategy, but that further optimization of the vancomycin injection dose and injection time are necessary. / Thesis / Master of Science (MSc)

Ternary III-nitride alloys have enabled the design of various devices ranging from optoelectronics to power electronics due to their tunable band gap. BxGa1-xN is a wide band gap semiconductor with applications in detecting devices, power electronics and light-emitting diodes. The band gap can be modulated by changing the Boron concentration. It can be grown by metal-organic chemical vapor deposition as a mixed thin film of wurtzite and zincblende structures. In this work, we investigate the structural and electronic properties of BxGa1-xN (x<0.2) by first-principles calculations for both the wurtzite and zincblende phases. The formation energies of Si and Mg impurities and of a Ga vacancy are also calculated. We find that the wurtzite structure is favored over the zincblende structure. Furthermore, the Si and Mg impurities have relatively low formation energies in their neutral state, which indicates compatibility with BxGa1-xN, while a Ga vacancy has very high formation energy, hence being less likely to form spontaneously. Moreover, in the charged states, the formation energy of Mg is reasonably low for most values of the Fermi level, while the formation energy of Si depends linearly on the Fermi level, indicating challenges in achieving n-type conductivity. For a Ga vacancy in a triple acceptor state, the formation energy is reasonably low close to the conduction band, therefore, Ga vacancies interfere with n-type conductivity.

TCAD numerical simulations have been carried out to study the current-voltage, electrical breakdown, and self-heating characteristics of β-Ga2O3 based metal-oxide field effect transistors (MOSFETs). β-Ga2O3 semiconductor has an ultra-wide bandgap of ~ 4.8 eV, a theoretical critical breakdown field strength, Ec ~ 8 MV/cm, making it an excellent candidate for high-voltage or power electronics applications. The numerical simulations have been benchmarked against experimentally reported data. For modeling impact ionization, which is expected to induce intrinsic avalanche breakdown, the Selberherr’s model has been used with appropriate parameterization. For a device with a gate length of 2 μm, 0.6 μm gate-drain spacing, 3.4 μm source-drain spacing, and 20 nm thick Al2O3 gate insulator, the intrinsic breakdown voltage was found to be ~460 V. While self-heating dramatically affects the output current and conductance, it has an insignificant effect on the breakdown voltage. The use of a thinner epitaxial channel was found to increase the breakdown voltage slightly (by ~30 V).

The nuclear magnetic resonance spectrum and the spin lattice relaxation time of protons in powdered hydrated gallium sulfate have been investigated and compared in order to determine the probable proton configurations. The second moment and the relaxation time of the proton resonance were studied over a wide range of temperature. The NMR evidence is compatible with the existence of protons in OH-and H30+ configurations supporting the suggestion of Johansson (1962) based on an x-ray structure analysis. / Thesis / Master of Science (MS)

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