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The preparation and study of the halides and a nitride of gallium ...Parsons, James Bayard, January 1932 (has links)
Thesis (Ph. D.)--University of Chicago, 1931. / "Private edition, distributed by the University of Chicago libraries, Chicago, Illinois."
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The [alpha]-Ga [alpha-Ga] (010) surface investigated by room and low temperature scanning tunneling microscopy and helium atom scatteringPertaya, Natalya. January 2004 (has links)
Berlin, Freie Universiẗat, Diss., 2004. / Dateiformat: zip, Dateien im PDF-Format.
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Gallazanes and related compoundsPenland, Allen David January 1971 (has links)
This work involved preparation of cyclical dimeric or trimeric gallazanes
of general formula: (RNHGaH₂)[subscript n omitted] where n= 2 or 3 and R = Et, Pr[superscript n omitted], Pr[superscript i omitted], Bu[superscript n omitted], Bu[superscript i omitted],
Bu[superscript s omitted], or Bu[superscript t omitted]. The effect of larger R group on ring size ( n value ) was determined.
Some deuterated analogues of these compounds were also prepared. These were (EtNHGaD₂)₃, (Bu[superscript t omitted]NHGaD₂)₂, and (Pr[superscript i omitted]NHGaD₂)₂.
Attempted preparation of ØNHGaH₂ resulted in isolation of ØNH.GaH₂.NMe₃. Reactions were undertaken with ØNH.GaH₂.NMe₃ and it partially deuterated analogue ØNHGaD₂.NMe₃, and shown to involve proton transfer through a 4-centre transition state.
Additional work on the effects of R group on the nitrogen within the gallazanes involved preparation of dimeric gallazanes of general formula ((CH₂)[subscript x omitted].N.GaH₂)₂ where x = 2,3,4 or 5.
Additional work on double ring systems involved preparation of analogous alazanes of general formula ((CH₂)[subscript x omitted]N.AlH₂)[subscript n omitted] where x = 2,3,4,5 and n = 2 or 3. Similar borazanes were likewise prepared and were of general formula: ((CH₂)[subscript x omitted].N.BH₂)[subscript n omitted] where x = 2,3,4, 5 and n = 2 or 3.
Adducts of general formula: (CH₂)₂NH.EMe₃ where E = B, Al, Ga, In, were also prepared. Upon pyrolysis these adducts yield methane plus materials of the general formula: ((CH₂)₂N.EMe₂)₃ where E = Al,Ga, In.
Characterization of these materials as well as gaseous reaction products was accomplished by infrared spectroscopy. Additional data was obtained by 60MHz and 100MHz 'H nmr as well as mass spectrometry. Molecular weights were determined cryoscopically in benzene and analyses for galluim, aluminum or hydrolysable hydrogen carried out by standard means. / Science, Faculty of / Chemistry, Department of / Graduate
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Nuclear magnetic resonance study of single crystals of gallium metalValic, Marko Ivan January 1970 (has links)
The nuclear magnetic resonance spectrum of gallium metal has been
investigated in single crystal specimens in both low and high magnetic
fields from 4.2°K to the melting point (T[subscript MP] = 300°K) and then extended
to the liquid phase. Precise determinations for the two non-equivalent
nuclear sites have been made of (a) the electric field gradient (EFG)
tensor and (b) the Knight shift (K) tensor. The relationship of these
results to the crystal structure of gallium metal is discussed in detail.
The isotopic Knight shift in the solid, K[superscript sol; subscript iso] increases linearly with temperature from (0.132±0.004)% at 4.2°K to (0.155±0.004)% just below
T[subscript MP]. In the liquid, just above T[subscript MP], K[superscript liq; sucscipt iso] = (0.453±0.003)% and decreases very slowly with increasing temperature. These results are discussed in terms of the Korringa relations in the solid and liquid phases, respectively.
Implications of these results are developed with regard to changes in the electronic structure of gallium upon melting.
The angular dependence of K[subscript an] agrees with the predicted angular dependence for the Knight shift anisotropy in an orthorhombic environment and
is described with two anisotropy parameters defined as K₁ and K₂. No K-
anisotropy is found along the Y (B crystal) axis. The principal axes
of the K tensor have different signs from the quadrupolar principle
axes. K[subscript an] (X) is found to be very large, i.e. K[subscript an] (X)/K[subscript iso] = -18% at 77°K,
and temperature dependent. Increasing the temperature (T) from 4.2°K,
K[subscript an] (X) increases to a maximum at 77°K and then slowly decreases as T
approaches T[subscript MP] where it still retains a large value. This paradoxical behaviour is assumed to be a result of particular and unusual details of the gallium Fermi surface. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
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Effects of ion processing and substrate variables on electrical characteristics of GaAs /Sen, Sidhartha, January 1991 (has links)
Thesis (Ph. D.)--Virginia Polytechnic Institute and State University, 1991. / Vita. Abstract. Includes bibliographical references (leaves 208-216). Also available via the Internet.
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Some problems in the chemistry of galliumReddy, G. Satyanarayana January 1964 (has links)
No description available.
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Niedervalente Galliumverbindungen und deren ReaktionenSeifert, Annekathrin. January 2009 (has links)
Heidelberg, Univ., Diss., 2008.
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Near field imaging of gallium nitride nanowires for characterization of minority carrier diffusionBaird, Lee G. January 2009 (has links) (PDF)
Thesis (M.S. in Applied Physics)--Naval Postgraduate School, December 2009. / Thesis Advisor(s): Haegel, Nancy M. Second Reader: Luscombe, James. "December 2009." Description based on title screen as viewed on January 27, 2010. Author(s) subject terms: Transport imaging, minority carrier, GaN nanowires, diffusion length, near-field scanning optical microscopy, NSOM. Includes bibliographical references (p. 63-64). Also available in print.
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Spectroscopic ellipsometry of interfacial phase transitions in fluid metallic systems: Kx(KCl)1_x and Ga1_xBixDogel, Stanislav. January 2004 (has links) (PDF)
Zugl.: Karlsruhe, Univ., Diss., 2004. / Computerdatei im Fernzugriff.
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Étude à l'aide de l'analyseur ionique de la diffusion de l'indium dans l'antimoniure de gallium.Mathiot, Daniel, January 1900 (has links)
Th. doct.-ing.--Nancy, I.N.P.L., 1979.
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