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Electron irradiation damage in GaAs and GaPWoodhead, J. January 1982 (has links)
No description available.
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22 |
STM studies of GaAs homoepitaxy on low index surface orientationsHolmes, Darran Mark January 1998 (has links)
No description available.
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An investigation of novel gallium precursors for semiconductor growthWhitaker, Timothy John January 1993 (has links)
No description available.
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24 |
Investigations of some defects in GaAs and some transport properties of GaAs/(AlGa)As heterojunctionsBousbahi, K. January 1985 (has links)
No description available.
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25 |
GaAs monolithic control devices and circuitsTayrani, R. January 1986 (has links)
No description available.
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26 |
Growth and characterisation of GaNLi, Tian January 2002 (has links)
No description available.
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27 |
The electrical properties of dislocations in GaAsGalloway, Simon A. January 1994 (has links)
No description available.
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28 |
GaN high-voltage transistors : an investigation of surface donor trapsLongobardi, Giorgia January 2015 (has links)
No description available.
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29 |
The nonlinear optical properties of gallium arsenide pertaining to terahertz generation /Hurlbut, Walter C. January 1900 (has links)
Thesis (Ph. D.)--Oregon State University, 2008. / Printout. Includes bibliographical references (leaves 178-184). Also available on the World Wide Web.
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30 |
Measurement of minority charge carrier diffusion length in Gallium Nitride nanowires using Electron Beam InducedCurrent (EBIC)Ong, Chiou Perng. January 2009 (has links) (PDF)
Thesis (M.S. in Combat Systems Science and Technology)--Naval Postgraduate School, December 2009. / Thesis Advisor: Haegel, Nacy M. Second Reader: Karunasiri, Gamani. "December 2009." Description based on title screen as viewed on January 26, 2010. Author(s) subject terms: Minority charge carrier, diffusion length, GaN, nanowires, EBIC. Includes bibliographical references (p. 71-73). Also available in print.
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