• Refine Query
  • Source
  • Publication year
  • to
  • Language
  • 647
  • 122
  • 79
  • 55
  • 28
  • 12
  • 10
  • 9
  • 6
  • 6
  • 6
  • 6
  • 6
  • 5
  • 5
  • Tagged with
  • 1258
  • 408
  • 308
  • 266
  • 185
  • 167
  • 129
  • 118
  • 110
  • 96
  • 95
  • 92
  • 91
  • 91
  • 89
  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
21

Electron irradiation damage in GaAs and GaP

Woodhead, J. January 1982 (has links)
No description available.
22

STM studies of GaAs homoepitaxy on low index surface orientations

Holmes, Darran Mark January 1998 (has links)
No description available.
23

An investigation of novel gallium precursors for semiconductor growth

Whitaker, Timothy John January 1993 (has links)
No description available.
24

Investigations of some defects in GaAs and some transport properties of GaAs/(AlGa)As heterojunctions

Bousbahi, K. January 1985 (has links)
No description available.
25

GaAs monolithic control devices and circuits

Tayrani, R. January 1986 (has links)
No description available.
26

Growth and characterisation of GaN

Li, Tian January 2002 (has links)
No description available.
27

The electrical properties of dislocations in GaAs

Galloway, Simon A. January 1994 (has links)
No description available.
28

GaN high-voltage transistors : an investigation of surface donor traps

Longobardi, Giorgia January 2015 (has links)
No description available.
29

The nonlinear optical properties of gallium arsenide pertaining to terahertz generation /

Hurlbut, Walter C. January 1900 (has links)
Thesis (Ph. D.)--Oregon State University, 2008. / Printout. Includes bibliographical references (leaves 178-184). Also available on the World Wide Web.
30

Measurement of minority charge carrier diffusion length in Gallium Nitride nanowires using Electron Beam InducedCurrent (EBIC)

Ong, Chiou Perng. January 2009 (has links) (PDF)
Thesis (M.S. in Combat Systems Science and Technology)--Naval Postgraduate School, December 2009. / Thesis Advisor: Haegel, Nacy M. Second Reader: Karunasiri, Gamani. "December 2009." Description based on title screen as viewed on January 26, 2010. Author(s) subject terms: Minority charge carrier, diffusion length, GaN, nanowires, EBIC. Includes bibliographical references (p. 71-73). Also available in print.

Page generated in 0.0294 seconds