Utilizing bulk micromachining technology, this thesis aimed to develop a flexural plate-wave(FPW) device with novel groove reflection microstructure for high-sensitivity and low insertion-loss biomedical microsystem applications. The influences of the amount and depth of the groove and the distance between the groove and the boundary of ZnO piezoelectric thin-film (DGB) on the reduction of insertion-loss and the enhancement of quality factor (Q) and electromechanical coupling coefficient (K2) were investigated. Three critical technology modules established in this thesis are including the development of (1) a sputtering deposition process of high C-axis (002) orientation ZnO piezoelectric thin-film, (2) an electrochemical etch-stop technique of silicon anisotropic etching and (3) an integration process of FPW device. Firstly, under the optimized conditions of the sputtering deposition process (300¢J substrate temperature, 200 W radio-frequency (RF) power and 30/70 Ar/O2 gas flow ratio), a high C-axis (002) orientated ZnO piezoelectric thin-film with a high X-ray diffraction (XRD) intensity (50,799 a.u.) and narrow full width at half maximum (FWHM = 0.383¢X) can be demonstrated. The peak of XRD intensity of the standard ZnO film occurs at diffraction angle 2£c = 34.422¢X, which matches well with our results (2£c = 34.357¢X). Secondary, an electrochemical etch-stop system with three electrode configuration has been established in this research and the etching accuracy can be controlled to less than 1%. Thirdly, this thesis has successfully integrated the main fabrication processes for developing the FPW device which are including six thin-film deposition processes and six photolithography processes. The implemented FPW device with RIE etched groove reflection microstructure presents a low insertion-loss of -12.646 dB, center frequency of 114.7 MHz, Q factor of 12.76 and K2 value of 0.1876%.