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Magnetic Skyrmion Phase in MnSi Thin FilmsWilson, Murray 01 April 2013 (has links)
Detailed magnetometry and polarized neutron reflectometry studies were conducted
on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that
with an in-plane applied field H || [110], a broadly stable skyrmion phase exists at
elevated temperatures and fields.
Magnetometry and transport measurements with an out-of-plane applied field
H || [111] prove that no skyrmion phase exists in this geometry. However, Hall effect
measurements in this geometry show unexpected evidence of a topological Hall effect.
This can be explained with a multi-dimensionally modulated cone phase, which proves
that contrary to recent literature, a topological Hall effect is not sufficient proof of
skyrmions.
The results of this thesis represent a significant step towards a technologically
relevant material in which skyrmions are broadly stable. A material of this type
could be used in novel magnetic storage devices and signi ficantly impact our future
computing capabilities.
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