Detailed magnetometry and polarized neutron reflectometry studies were conducted on MnSi thin films grown epitaxially on Si(111) substrates. It is demonstrated that with an in-plane applied field H || [110], a broadly stable skyrmion phase exists at elevated temperatures and fields. Magnetometry and transport measurements with an out-of-plane applied field H || [111] prove that no skyrmion phase exists in this geometry. However, Hall effect measurements in this geometry show unexpected evidence of a topological Hall effect. This can be explained with a multi-dimensionally modulated cone phase, which proves that contrary to recent literature, a topological Hall effect is not sufficient proof of skyrmions. The results of this thesis represent a significant step towards a technologically relevant material in which skyrmions are broadly stable. A material of this type could be used in novel magnetic storage devices and signi ficantly impact our future computing capabilities.