We study AlGaN/GaN heterostucture using temperature dependent micro-photoluminescence. Detailing its principle, operation process and analysis is to provide usage experiences for posterity's reference. The experiment's results emphasize analysis in the photoluminescence spectrum of the GaN in the heterostructure. We believe the peaks 3.486eV, 3.405eV and 3.310eV provided from Free Exciton A, FXA-1LO and FXA-2LO respectively by experience in the cultural heritage.And the fitting result of FXA peak with Gaussian curve shows the major peak is composed by (D0,X), FXA and FXB. Finally, we analyze the major peaks' characteristics varied with the temperature.

Since 2004, graphene attracts intensive attention from scientists and engineers all over the world. During the last decades, the research relates to graphene and other 2 dimensional (2D) materials are rapidly increasing. Approximately, ten thousand journal papers have been published after the discovery of graphene in relative topics widely spread. On the other hand, the simple graphene properties research is nearly completed. Researchers turn their attention to other 2D materials or Van der Waals heterostructures. By increasing the liberty and knowledge of 2D materials, the Van der Waals heterostructures can start to build something on this 2D wander land. In this thesis the Van der Waals heterostructures is based on graphene and some other well known 2D materials such as hexagonal boron nitride (hBN) to study fundamental physics and possible applications in near future. In this thesis, three published papers which are related to Van der Waals heterostructures have been included. The electronic properties of encapsulated graphene on different 2D crystals have been investigated by the capacitance spectroscopy. Several 2D crystals have been tested as a substrate such as MoS2, WS2, mica, LiNbO3…etc. The quality of encapsulated device is correlates the interface self-cleaning. Follow with the fundamental physics study employed by a simple Van der Waals heterostructure. Graphene and hBN is lattice aligned within 2 degrees in difference and creates a new superlattice structure which just like moire pattern happens while two similar patterns overlapped. The basic electronic properties do not vary at near Dirac point. Away from the first generation Dirac point, the superlattice structure affects the band structure in higher carrier concentration. In this paper, aligned graphene-hBN capacitors have been demonstrated to discover more fine details of these many-body interactions in this superlattice structure. The final part is related to twist controlled graphene-graphene resonance tunneling transistors. A Van der Waals heterostructure is constructed by two aligned graphene stripes with a thin layer of hBN as a spacer. The electrons are tunneled from one stripe to another graphene stripe while a bias voltage applied. The resonance tunneling is occurred when two graphene flakes are aligned at certain bias voltage. In this paper, we contribute the resonance tunneling to momentum conservation of tunnelling electrons. Theory simulation is highly agreed with our experiment results.

Magnetoelectric (ME) materials are attracting increasing attention due to the achievable reading/writing source (electric field and magnetic field in most cases), fast response time, and larger storage density. Therefore, nanocomposites featuring both magnetostriction and piezoelectricity were investigated to increase the converse magnetoelectric (CME, α) coefficient. Among all the nanocomposites, vertically/horizontally-integrated heterostructures were investigated; these materials offer intimate lattice contact, lower clamping effect, dramatically enhanced α, easier reading direction, and the potential to be patterned for complicated applications. In the present work, we focused on three principal goals: (a) creating two-phase vertically integrated heterostructures with different ME materials that provide much larger α, and enhanced strain-induced magnetic shape anisotropy compared with the single-phased ME nanomaterials; (b) creating a vertically integrated heterostructure with large α, lower loss, and higher efficiency; and (c) investigating the stable magnetization states that this heterostructure could achieve, and how it can be used in advanced memory devices and logic devices. Firstly, a BiFeO3-CoFe2O4 (BFO-CFO) heterostructure was epitaxially deposited on Pb(Mg1/3Nb2/3) O3-x at%PbTiO3 (PMN-xPT). The resulting PMN-xPT was proven to have a large piezoelectric effect capable of boosting the CME in the heterostructure to create a much higher α. Secondly, a novel material, CuFe2O4 (CuFO), featuring lower coercivity and loss, was chosen to be self-assembled with BFO. This low-loss could increase the efficiency of the ME effect. Also, our findings revealed a much larger α in the vertically integrated heterostructure compared to single-layer CuFO. Accordingly, the self-assembled structure represents a convenient method for increasing the CME in multiferroic materials. Thirdly, the magnetization states for all these vertically integrated heterostructures were studied. Note that vertically integrated heterostructures are typically fabricated using materials with volatile properties. However, these composites have shown a non-volatile nature with a multi-states (N≥4), which is favored for multiple applications such as multi-level-cell. Moreover, several self-assembled heterostructures were created that are conducive to magnetic anisotropy/coercivity manipulation. One such example is Ni0.65Zn0.35Al0.8Fe1.2O4 (NZAFO) with BFO, which forms a self-assembled nanobelt heterostructure that exhibits high induced magnetic shape anisotropy, and is capable of manipulating magnetic coercivity (from 2 Oe to 50 Oe) and magnetic anisotropy directions (both in-plane and out-of-plane). Finally, we deposited a SrRuO3-CoFe2O4 (SRO-CFO) vertically integrated composite thin film on the single crystal substrate PMN-30PT, with a CFO nanopillar and SRO matrix. In such a heterostructure, the SRO would serve as the conductive materials, while CFO offers the insulated property. This unique conductive/insulating heterostructure could be deposited on PMN-PT single crystals, thus mimicking patterned electrodes on the PMN-PT single crystals with enhanced dielectric constant and 33. / Doctor of Philosophy / Multi-ferroic materials, which contain multiple ferroic orders like ferromagnetism/ferroelectricity order, were widely studied nowadays. These orders are coupled together, which could manipulate one order via another one through the coupling. Due to the achievable reading/writing source (electric field and magnetic field in most of the case), fast response time and larger storage density, magnetoelectric (ME) materials aroused most interests to-date. To be used in different applications, such as memory devices and logic devices, a high transfer efficiency, or say a high coupling coefficient, is required. However, single-phase materials have nearly neglectable ME effect. Therefore, a nanocomposite that contents both magnetostriction and piezoelectricity were investigated to increase the converse magnetoelectric (CME, α) coefficient. Amongst all the nanocomposite, a vertically integrated heterostructure was revealed, which has intimate lattice contact, lower clamping effect, dramatically enhancedα, easier reading direction, and potential to be patterned for complicated applications. In this present work, we focused on several different aspects: (a) creating two-phase vertically integrated heterostructure with different ME materials, which provides much larger α, large strain-induced magnetic shape anisotropy comparing with the single-phased ME nanomaterials; (b): creating a vertically integrated heterostructure with large α and lower losses and higher efficiency; (c) investigate the stable magnetization states that this heterostructure could achieve, which shows the potential of being used in advanced memory devices and logic devices. Firstly, in this work, a BiFeO3-CoFe2O4 (BFO-CFO) heterostructure was epitaxially deposited on the Pb(Mg1/3Nb2/3) O3-x at%PbTiO3 (PMN-xPT), which could boost the CME in the heterostructure to create a much higher α. Then, a novel materials CuFe2O4 (CuFO), was chosen to be self-assembled with BFO, which has lower losses and higher efficiency of the ME effect. Secondly, several self-assembled heterostructures were created, such as Ni0.65Zn0.35Al0.8Fe1.2O4 (NZAFO) with BFO, which manipulated the magnetic coercivity (from 2 Oe to 50 Oe) and magnetic anisotropy directions (Both in-plane and out-of-plane). And a heterostructure: SrRuO3 with CFO, created a vertically integrated heterostructure, could be used as patterned electrodes in different applications. Moreover, magnetization states were studied in all these vertically integrated heterostructures. A multi-states (N≥4) was revealed, which was favored by multiple applications such as multi-level-cell or logical devices. Finally, we deposited a SrRuO3-CoFe2O4 (SRO-CFO) vertically integrated composite thin film on the single crystal substrate PMN-30PT, with a CFO nanopillar and SRO matrix. In such a heterostructure, the SRO would serve as the conductive materials, while CFO offers the insulated property. This unique conductive/insulating heterostructure could be deposited on PMN-PT single crystals, thus mimicking patterned electrodes on the PMN-PT single crystals with enhanced dielectric constant and d_33.

In this thesis, we will discuss that GaN template which was grown on the sapphire by metal organic vapour phase epitaxy (MOVPE). Then GaN epi-layer, intrinsic AlGaN (as spacer) and N-type AlGaN(doping Si) which offers carrier grow by molecular-beam epitaxy. We changed the content of aluminium to find out any difference on AlGaN/GaN heterostructure . For our experimental, we tried our best to keep all the parameters in steady besides the vapor of aluminum. If the vapor of aluminum every 4.65*10-9 torr is set to be one unit, then ratio of the pressure from sample A to E is 0.5, 1.0, 1.5, 2 and 3. We can get the best growth parameters by hall measurement, reflection high-energy electron diffraction, scanning electron microscope, atomic force microscopic and X-ray diffraction analysis to improve the quality of the sample. From scanning electron microscope and reflecting high energy electronic diffraction picture, the roughness of all samples is good which confirms that the samples should be in two-dimensional (2D) growth mode. We can find the same result by atom force microscope. After comparing 3D picture, we find out the surface of Sample B is the smoothest, meanwhile the roughness is 1.404 (nm) has been calculated through the functions. Due to Hall measurement in 77 K, the electron mobility of this series of samples are very high, especially Sample C is 10995(cm2/Vs) and sample D is 10697 (cm2/Vs) respectively. Quite narrow Full Width at Half Maximum(FWHM) of AlGaN which is about only 300 (arcsec) has been showed under the analysis of X-ray in rocking curve mode and these results indicate these samples have extraordinary qualities better than previous one.

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Les photocatalyseurs à base de TiO2 ont été l’objet d’une grande attention comme une méthode durable de purification de l’air ou de l’eau, et de production d’hydrogène par décomposition de l’eau. Une stratégie avantageuse consiste à développer des héterostructures par couplage avec un autre oxyde métallique former une jonction de type Schottky ou avec un autre oxyde métallique pour créer une jonction p-n à l’interface de manière à prévenir les recombinaisons via une séparation de charge « vectorielle » à ces jonctions. De plus, les facettes cristallines jouent un rôle crucial dans le piégeage des porteurs de charge et, donc,dans les réactions rédox photoactivées. Ainsi, le dépôt sélectif de métal ou d’oxyde métallique sur des facettes spécifiques de nanocristaux de TiO2 devrait augmenter l’activité photocatalytique par l’amélioration de la séparation des charges. Dans ce travail, nous avons combiné l’emploi du cocatalyseur de type p NiO pour former des jonctions p-n avec son dépôt sélectif sur des nanocristaux de TiO2 anatase exposant des facettes bien définies. Par ailleurs, des expériences modèles de physique de surface ont été menées pour étudier les propriétés électroniques de ces hétérojonctions. / TiO2 photocatalysts have attracted attention as a sustainable method for water/air purification and hydrogen production by water splitting. An advantageous strategy is the development of heterostructures by coupling metal oxides to create a p-n junction at their interface in order to prevent there combination by vectorial charge carrier separation at these energy junctions. In addition, crystal facets play a decisive role in the trapping of charge carriers and thus photocatalytic redox reactions. Thus, selective deposition of metal or metal oxides onto specific facets would enhance the photocatalytic activity by improving charge separation. In this work, we have combined the usage of p-type NiO co-catalyst to form p-n junction with its selective deposition onto the specific facet of oriented TiO2nanocrystal photocatalysts. Furthermore, the physical model experiments have been performed to investigate the electronic properties of these heterojunctions.

Semiconductor nanowire field-effect transistors (NWFET) have been recognized as a possible alternative to silicon-based CMOS technology as traditional scaling limits are neared. The core-shell nanowire structure, in particular, also allows for the enhancement of carrier mobility through radial band engineering. In this thesis, we have evaluated the possibility of electron confinement in strained Si-Si1-xGex core-shell nanowire heterostructures. Cylindrical strain distribution was calculated analytically for structures of various dimensions and shell compositions. The strain-induced conduction band edge shift of each region was found using k•p theory coupled with a coordinate system shift to account for strain. A positive conduction band offset of up to 200 meV was found for a Si-Si0.2Ge0.8 structure. We have also designed and characterized a modulation doping scheme for p-type, Ge-SiGe core-shell NWFETs. Finite element simulations of hole density versus radial position were done for different combinations of dopant position and concentration. Three modulation doped nanowire samples, each with a different boron doping density in the shell, were grown using a combined vapor-liquid-solid and chemical vapor deposition process. Low temperature current-voltage measurements of bottom- and top-gate samples indicate that hole mobility is limited by the proximity of charged impurities. / text

Semiconductor-based heterogeneous photocatalysis, as one of the advanced oxidation processes that makes use of semiconductors and inexhaustible solar light, has recently been extensively studied and applied to water decontamination. However, due to low light absorption efficiencies and severe electron-hole recombination, modifications on semiconductor structures are required in order to enhance their photocatalytic performance. Heterogeneous photocatalyst composites, taking advantage of the improved light absorption efficiency as well as the facilitated electron-hole separation at the interface between different semiconductors, have been proven to be a promising strategy. In this study, novel NaNbO3/Bi2WO6 photocatalyst composites with a type-II heterogeneous alignment were successfully prepared via a facile wet impregnation method. The as-prepared photocatalysts were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), diffuse reflectance UV-Vis spectroscopy (DRS), photocurrent (PC) and electrochemical impedance spectroscopy (EIS) analyses. The 30 wt% NaNbO3/Bi2WO6 composite exhibited the best performance for degrading an RhB (rhodamine B) aqueous solution under visible light irradiation (λ > 410 nm), which was ca. 40 times and ca. 2.5 times that of the pristine NaNbO3 and Bi2WO6, respectively. The improved photocatalytic activity may be attributed to the enhanced electron-hole separation efficiency in Bi2WO6 with the assistance of NaNbO_3, as well as the dye-sensitization effect of RhB itself. Radical quenching experiments revealed that h+ played the predominant role, and O2•- functioned as well to some degree. The produced intermediates during the reaction and RhB degradation pathway were speculated and investigated as well. The excellent stability and reusability were verified by repetitively running for five times. Based on experimental results, a plausible functioning mechanism was proposed. Effects of several operation parameters on the catalyst performance including initial RhB concentration, catalyst dosage, reaction temperature and initial pH were also discussed. This study provides solid evidence for NaNbO3 to be a promising candidate for photocatalysis and gives out a novel photocatalytic mechanism of Bi2WO6-based type-II heterostructures.

In less than a decade of research, graphene has earned a long list of superlatives to its name and is expected to have applications in various fields such as electronics, photonics, optoelectronics, materials, biology and chemistry. Graphene has also attracted a lot of attention because its properties can be engineered either via intrinsic changes or by modification of its environment. Raman spectroscopy has become an ideal characterization method to obtain qualitative and quantitative information on these changes. This thesis investigates the possibility to change, supplement and monitor the electonic and optical properties as well as the chemical reactivity of graphene. It is achieved by i) substrate effect, ii) introduction of defects in the structure of graphene and iii) the combination of graphene with other two- dimensional crystals such as hexagonal boron nitride (h-BN) and transition metal dichacolgenides. In particular, the experimental work presented here describes: I - The influence of the type of substrate on the Raman intensity of graphene. This work leads to the calculation of the Raman scattering efficiency of graphene after CaF2 is found to be a suitable substrate for this kind of study in contrast to Si/SiOx that strongly modulates the Raman intensities. The G peak scattering efficiency is found to be about 200 x 10-5 m-1 Sr-1 at 2.4 eV while that of the 2D peak is one order of magnitude higher, confirming the resonant nature of the 2D peak Raman scattering process. II - An attractive method to produce large (up to several hundreds of microns across) and high quality graphene by anodic bonding. This cheap, fast and solvent-free method also allows introduction of vacancy like defects in the samples in a relatively controllable way. III - The Raman signatures of several types of defect such as sp3 sites, vacancies and substitutional atoms. For low defect concentration (stage 1) the intensitiy ratio I(D)/I(D') is constant and is 13 for sp3 sites, 9 for substitutional atoms and 7 for vacancies. This signature is explained using the local activation model recently proposed to model the amorphization trajectory of graphene with containing vacancy-like defects. IV - Controlled modification of graphene through mild oxygen plasma. The influence of sp3 sites on monolayer and bilayer graphene's electrical properties are discussed. In the case of bilayer under controlled conditions, it is possible to modify only the top layer. This may lead to decoupling between the two layers, which could explain the good mobility measured for this system. The possiblity to use such system as a sensor is discussed. V - The characteristic Raman signature of aligned graphene/h-BN superlattices. The Raman spectrum shows strong changes in perfectly aligned superlattices, which could be attributed to the reconstruction of the Dirac spectrum. VI - A prototype photovoltaic cell made of a graphene and tungsten disulphide (WS2) heterostructure with an external quantum efficiency of about 30%. The beneficial combination of an excellent absorption in WS2 atomically thin films due to the presence of van Hove singularities and graphene used as a transparent, flexible and conductive electrode is demonstrated.

In this study, we discuss AlGaN/GaN high electron-mobility heterostructs grown by metal organic chemical vapor deposition technique. We analyzed the samples by optical and magnetoelectrical experiments to probe the dependence of the piezoelectric effect on the structural difference. We hope our results may be useful for the design of nitride heterostructures. The E-beam evaporator operation manual given in this thesis may be useful for future users.