<p> This thesis focuses on the noise model verification at both device and circuit levels using circuit simulators. The techniques and procedures developed in this thesis are general and can be applied to any proposed RF noise model equations. To fulfil the two tasks, three main topics have been accomplished. First, a general noise source implementation method has been presented in detail in this thesis and is verified with measurements for both long and short-channel MOSFETs. This method provides a simple and effective way to implement the enhanced channel noise and induced gate noise of MOSFETs without increasing the simulation complexity for the simulators.</p> <p> Second, a systematic procedure to refine the model parameters used in noise calculation is presented. For a model to accurately predict the HF noise characteristics, the accuracy in the prediction of both DC and AC characteristics has to be ensured. The procedure proposed in this thesis provides both DC and AC model parameter verification and optimization for RF noise simulation purpose.</p> <p> Third, as for benchmark circuits to verify noise model at the circuit level, two LNA designs are proposed in the thesis. The first design gives the emphasis on the noise reduction technique and the LNA design procedure. The proposed noise reduction technique gives circuit designers more control on noise figure minimization through noise matching. The second design is used to experimentally verify the noise model at the circuit level.</p> / Thesis / Master of Applied Science (MASc)

A very short and disagreeable audible and tactile response from a vehicle driveline may be excited when the throttle is abruptly applied or released, or when the clutch is rapidly engaged. The condition is most noticeable in low gear and in slow moving traffic, when other background engine and road noise levels are low. This phenomenon is known as clonk and is often associated with the first cycle of shuffle response, which is a low frequency longitudinal vehicle movement excited by throttle demand. It is often reported that clonk may coincide with each cycle of the shuffle response, and multiple clonks may then occur. The problem is aggravated by backlash and wear in the drivetrain, and it conveys a perception of low quality to the customer. Hitherto, reported investigations do not reveal or discuss the mechanism and causal factors of clonk in a quantitative manner, which would relate the engine impulsive torque to the elastic response of the driveline components, and in particular to the noise radiating surfaces. Crucially, neither have the issues of sensitivity, variability and non-linearity been addressed and published. It is also of fundamental importance that clonk is seen as a total system response to impulsive torque, in the presence of distributed lash at the vibro-elastic impact sites. In this thesis, the drivetrain is defined as the torque path from the engine flywheel to the road wheels. The drivetrain is a lightly damped and highly non-linear dynamic system. There are many impact and noise emitting locations in the driveline that contribute to clonk, when the system is subjected to shock torque loading. This thesis examines the clonk energy paths, from the initial impact to many driveline lash locations, and to the various noise radiating surfaces. Both experimental and theoretical methods are applied to this complex system. Structural and acoustic dynamics are considered, as well as the very important frequency couplings between elastic structures and acoustic volumes. Preliminary road tests had indicated that the clonk phenomenon was a, very short transient impact event between lubricated contacts and having a high frequency characteristic. This indicated that a multi-body dynamics simulation of the driveline, in conjunction with a high frequency elasto-acoustic coupling analysis, would be required. In addition, advanced methods of signal analysis would be required to handle the frequency content of the very short clonk time histories. These are the main novelties of this thesis. There were many successful outcomes from the investigation, including quantitative agreement between the numerical and experimental investigations. From the experimental work, it was established that vehicle clonk could be accurately reproduced on a driveline rig and also on a vehicle chassis dynamometer, under controlled test conditions. It then enabled Design of Experiments to be conducted and the principal causal factors to be identified. The experimental input and output data was also used to verify the mathematical simulation. The high frequency FE analysis of the structures and acoustic cavities were used to predict the dynamic modal response to a shock input. The excellent correlation between model and empirical data that was achieved, clearly established the clonk mechanism in mathematical physics terms. Localised impact of meshing gears under impulsive loads were found to be responsible for high frequency structural wave propagation, some of which coupled with the acoustics modes of cavities, when the speed of wave propagation reached supersonic levels. This finding, although previously surmised, has been shown in the thesis and constitutes a major contribution to knowledge.

Le développement des technologies de communication et de l’information nécessite des composants semi-conducteurs ultrarapides et à faible niveau de bruit. Les transistors bipolaires à hétérojonction (TBH) sont des dispositifs qui visent des applications à hautes fréquences et qui peuvent satisfaire ces conditions. L’objet de cette thèse est l’étude expérimentale et la modélisation du bruit haute fréquence des TBH Si/SiGe:C (technologie STMicroelectronics) et InP/InGaAs (III-V Lab Alcatel-Thales).Accompagné d’un état de l’art des performances dynamiques des différentes technologies de TBH, le chapitre I rappelle brièvement le fonctionnement et la caractérisation des TBH en régime statique et dynamique. La première partie du chapitre II donne la description des deux types de TBH, avec l’analyse des performances dynamiques et statiques en fonction des variations technologiques de ceux-ci (composition de la base du TBH SiGe:C, réduction des dimensions latérales du TBH InGaAs). Avec l’aide d’une modélisation hydrodynamique, la seconde partie montre l’avantage d’une composition en germanium de 15-25% dans la base du TBH SiGe pour atteindre les meilleurs performances dynamiques. Le chapitre III synthétise des analyses statiques et dynamiques réalisées à basse température permettant de déterminer le poids relatif des temps de transit et des temps de charge dans la limitation des performances des TBH. L’analyse expérimentale et la modélisation analytique du bruit haute fréquence des deux types de TBH sont présentées en chapitre IV. La modélisation permet de mettre en évidence l’influence de la défocalisation du courant, de l’auto-échauffement, de la nature de l’hétérojonction base-émetteur sur le bruit haute fréquence. Une estimation des performances en bruit à basse température des deux types de TBH est obtenues avec les modèles électriques. / In order to fulfil the roadmap for the development of telecommunication and information technologies (TIC), low noise level and very fast semiconductor devices are required. Heterojunction bipolar transistor has demonstrated excellent high frequency performances and becomes a candidate to address TIC roadmap. This work deals with experimental analysis and high frequency noise modelling of Si/SiGe:C HBT (STMicroelectronics tech.) and InP/InGaAs HBT (III-V Lab Alcatel-Thales).Chapter I introduces the basic concepts of HBTs operation and the characterization at high-frequency. This chapter summarizes the high frequency performances of many state-of-the-art HBT technologies. The first part of chapter II describes the two HBT sets, with paying attention on the impact of the base composition (SiGe:C) or the lateral reduction of the device (InGaAs) on static and dynamic performances. Based on TCAD modelling, the second part shows that a 15-25% germanium composition profile in the base is able to reach highest dynamic performances. Chapter III summarizes the static and dynamic results at low temperature, giving a separation of the intrinsic transit times and charging times involved into the performance limitation. Chapter IV presents noise measurements and the derivation of high frequency noise analytical models. These models highlight the impact of the current crowding and the self-heating effects, and the influence of the base-emitter heterojunction on the high frequency noise. According to these models the high frequency noise performances are estimated at low temperature for both HBT technologies.

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