Thesis (M.Sc.)--York University, 2007. Graduate Programme in Physics and Astronomy. / Typescript. Includes bibliographical references (leaves 77-79). Also available on the Internet. MODE OF ACCESS via web browser by entering the following URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:MR38785

Thesis (Ph. D.)--California Institute of Technology, 1973. UM #73-07,291. / Advisor names found in the Acknowledgments pages of the thesis. Title from home page. Viewed 01/19/2010. Includes bibliographical references.

Thesis (Ph. D.)--California Institute of Technology, 1982. UM #82-08,712. / Advisor names found in the Acknowledgments pages of the thesis. Title from home page. Viewed 02/18/2010. Includes bibliographical references.

Electron impact ionization is an important phenomenon touching many areas of science, and much research has been done over the years on various aspects of this process. Efforts to establish the precise variation of ionization cross section with energy were initiated in the early 1950's; however, severe disagreements between experimental data concerning fine structure observed in the electron impact ionization efficiency curves were reported from laboratory to laboratory. The work in this thesis has been largely devoted to establishing the credibility of the method of electron impact ionization by monoenergetic electron beam in the study of such fine structure. The design and construction of an apparatus to study the ionization of atoms and molecules by an electron beam of narrow energy width are described, and preliminary data on krypton and argon near the ionization threshold energies discussed. A sound basis has been laid for further development in this field. / Science, Faculty of / Chemistry, Department of / Graduate

No description available.

Thesis (Ph. D.)--University of Nevada, Reno, 2006. / "August, 2006." Includes bibliographical references (leaves xx-xx). Online version available on the World Wide Web.

Thesis (Ph.D.)--Murdoch University, 2005. / Thesis submitted to the Division of Science and Engineering. Includes bibliographical references (p. 175-182).

Thesis (M.S.)--University of Nevada, Reno, 2006. / "December, 2006." Includes bibliographical references (leaves 55-58). Online version available on the World Wide Web.

This dissertation outlines the study and development of a Solid-state Impact-ionization Multiplier (SIM). The SIM is a stand-alone current amplifier designed with optical detection systems in mind. The SIM amplifies signals utilizing impact ionization as a source of gain. The SIM is fabricated on silicon in order to take advantage of its favorable impact ionization coefficients. Utilizing silicon in impact ionization based gain devices makes low noise and high gains attainable. Because it is a stand-alone device, it can be wired to an arbitrary current source making it capable of receiving an input from photodiodes of any material. This makes it possible to amplify a signal from a photodiode that has been optimized for a given wavelength. In this way, the SIM attempts to separate the absorption and multiplication portions in modern day optical detection/amplification devices such as in Avalanche Photodiodes (APDs). This flexibility allows it to be utilized in many different systems. The SIM has gone through several iterations in the last few years. Each change has been with the purpose of increasing gain, frequency response or yield. The progression of the device has come at the hand of much thought, theory, simulation, fabrication, and testing. One of the challenges encountered in its development has been gain controllability due to poor carrier confinement and premature breakdown. Increased gain control was developed through simulation and fabrication of a confining oxide layer. Yield and difficulties in consistent fabrication were also addressed by altering the input metallization and doping processes. The frequency response of the device has been the largest challenge in device development. Issues such as space charge, floating node voltage, edge effects and low signal amplification have caused limitations. Successes and attempts at overcoming these, and other, challenges is the basis of this dissertation of work.

This thesis presents a comprehensive assessment of breakdown and operational voltage constraints in state-of-the-art silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) BiCMOS technology. Technology scaling of SiGe HBTs for high frequency performance results on lower breakdown voltages, making operating voltage constraints an increasingly vital reliability consideration in SiGe HBTs from both a device and circuits perspective.