Thesis (M.S.)--Ohio University, June, 2005. / Includes bibliographical references (p. 46-50)

Thesis (Ph. D.)--School of Materials Science and Engineering, Georgia Institute of Technology, 2006. / Summers, Christopher, Committee Chair ; Chang, Gee-Kung, Committee Member ; Carter, Brent, Committee Member ; Wang, Zhong Lin, Committee Member ; Meindl, James, Committee Member ; Li, Mo, Committee Member.

Thesis (M.S.)--University of Missouri-Columbia, 2004. / Typescript. Includes bibliographical references (leaves 65-67). Also available on the Internet.

Thesis (Ph. D.)--University of Washington, 2005. / Vita. Includes bibliographical references (leaves 106-116).

Thesis (M.S.)--Ohio University, June, 2005. / Title from PDF t.p. Includes bibliographical references (p. 46-50)

Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.

Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1994. / Vita. Abstract. Includes bibliographical references (leaves 121-126). Also available via the Internet.

Στην παρούσα εργασία μελετάμε τη λειτουργία των διαχωριστών δέσμης, καθώς και τη στατιστική κατανομή ενός και δύο σωματιδίων σε απλό και διπλό πηγάδι δυναμικού. Εξετάζουμε υπό ποιες συνθήκες τα δύο αυτά συστήματα μας δίνουν σύμπλεκτες καταστάσεις. Για τους διαχωριστές δέσμης καταλήγουμε στο συμπέρασμα ότι η καταλληλότερη διάταξή τους για να έχουμε μέγιστη απόδοση σύμπλεκτων καταστάσεων, είναι αυτοί να βρίσκονται σε διαδοχική σειρά μεταξύ τους. Από την άλλη μεριά, η μελέτη πηγαδιών δυναμικού, που έγινε γραφικά και αριθμητικά, μας έδειξε ότι τα γεωμετρικά χαρακτηριστικά τού κάθε πηγαδιού, δηλαδή το πάχος και το ύψος του, καθορίζουν τις ιδιοενέργειες τού συστήματος, τις πυκνότητες πιθανότητας των κυματοπακέτων και τελικά την πιθανότητα δημιουργίας σύμπλεκτων καταστάσεων. Γνωρίζοντας τη στατιστική κατανομή των σωματιδίων, ελέγχουμε τη συμπεριφορά τους άρα και την πληροφορία που αυτά μεταφέρουν. Τα παραπάνω βρίσκουν εφαρμογή στα qubits και τους κβαντικούς υπολογιστές. / In the current project we study the function of the beam splitters as well as the statistical behavior of one and two particles in a single and a double quantum well. We examine the conditions under which these two systems provide us with entangled states. For the beam splitters we come to the conclusion that the most appropriate array for having entangled states, is to put them in successive line. On the other hand, the graphical and numerical study of the quantum wells showed that the geometrical characteristics of a quantum well, that is to say thickness and height, define the energy of the system, the density probability of the wave packets and finally the probability for having entangled states. Having knowledge of the statistical behavior of the particles, we may then control the informations that they carry. All the above have many applications in qubits and quantum computers.

Made available in DSpace on 2014-10-09T12:23:28Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T13:57:35Z (GMT). No. of bitstreams: 1 00975.pdf: 8447772 bytes, checksum: 57efc3cd214a3c9ef96ce7216cb7dd50 (MD5) / Tese (Doutoramento) / IEA/T / Faculdade de Medicina, Universidade de Sao Paulo - FM/USP

Microelectronic fabrication of Si typically involves high-temperature or high-energy processes. For instance, wafer fabrication, transistor fabrication, and silicidation are all above 500°C. Contrary to that tradition, we believe low-energy processes constitute a better alternative to enable the industrial application of single-molecule devices based on 2D materials. The present work addresses the postsynthesis processing of graphene at unconventional low temperature, low energy, and low pressure in the poly methyl-methacrylate- (PMMA-) assisted transfer of graphene to oxide wafer, in the electron-beam lithography with PMMA, and in the plasma patterning of graphene with a PMMA ribbon mask. During the exposure to the oxygen plasma, unprotected areas of graphene are converted to graphene oxide. The exposure time required to produce the ribbon patterns on graphene is 2 minutes. We produce graphene ribbon patterns with ∼50 nm width and integrate them into solid state and liquid gated transistor devices. / )e submitted manuscript has been created by UChicago Argonne, LLC, Operator of Argonne National Laboratory (“Argonne”). Argonne, a U.S. Department of Energy Office of Science laboratory, is operated under Contract DE-AC02-06CH11357. )e U.S. Government retains for itself, and others acting on its behalf, a paid-up nonexclusive, irrevocable worldwide license in said article to reproduce, prepare derivative works, distribute copies to the public, and perform publicly and display publicly, by or on behalf of the government. Funding text #2 )e Center for Nanoscale Materials was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract DE-AC02-06CH11357. )e authors also acknowledge financial support from Argonne National Laboratory’s Laboratory-Directed Research and Development Strategic Initiative. / Revisión por pares