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<p dir="ltr">As silicon (Si) technology advances to 3 nm node and beyond, vertically stacking in 3D is considered as the primary choice to increase the density of transistors per unit area for better chip performance. Therefore, looking for new materials capable of replacing Si in back-end-of-line (BEOL) compatible monolithic 3D (M3D) integration has become one of the most important topics in the current field of electronic devices. Recent developed atomic layer deposition (ALD) deposited indium oxide (In₂O₃) field-effect transistors (FETs) have realized excellent electrical performance including field effect mobility over 100 cm²/V·s, on/off ratio up to 10¹⁷ and on-state current (I_ON) over 2.5 mA/μm in nanometer thin In₂O₃ FETs, providing promising prospect for next generation electronics. In this thesis, four main In₂O₃ related topics are discussed to examine the practicality of ALD In₂O₃ as channel material in BEOL compatible applications. First, the bias stability of planar In₂O₃ transistors and the effect of tin doping are studied. Second, gate-all-around (GAA) In₂O₃ FETs are implemented to improve I_ON up to record high 20 mA/μm, and its reliability is systematically measured and analyzed. Third, multilayer In₂O₃ FETs are constructed to investigate the possibility of vertical stacking. Last, vertical full oxide transistors with In₂O₃ gate are demonstrated to prove the feasibility of potential 3D integration.</p>

As the importance of indium for research and industry grows, the need for rapid, accurate analysis of the metal Increases. The dead stop titration method, which has been used for other metals, will now be applied to the quantitative determination of indium ion in aqueous solution. The uses of indium. Indium metal las found increased used during the last few years and is now comercially available. For a long time after its spectroscopic discovery in 1863 by Reich and Richter, it was regarded as little ore than further substantiation of the chemist's periodic classification of the elements. The first major use was more when it was discovered that coating bearing surfaces with the metal gave high corrosion resistance and caused the surface to retain a core complete all film (Latiner and Hildebrand, p. 1).For recently, indium has been used widely in a great many different applications. Sims (1556) and Schneider (1951) have summarized many of these.

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This thesis investigation concerns the optical and nonlinear electrical properties of n-InSb. Two specific areas have been studied. First is the magneto-optical study of magneto-donors, and second is the nonlinear dynamic study of nonlinear and chaotic oscillations in InSb. The magneto-optical study of InSb provides a physical picture of the magneto-donor levels, which has an important impact on the physical model of nonlinear and chaotic oscillations. Thus, the subjects discussed in this thesis connect the discipline of semiconductor physics with the field of nonlinear dynamics.