The scope of this thesis is to propose solutions to improve the performances of the CMOS transistor only simulated inductors (TOSI) aiming RF filtering applications. We are interested in TOSI architectures because they prove better performances than the classical gm–C filters, being superior with respect to the number of transistors, power consumption, frequency capability and chip area. Furthermore, TOSI architectures have many potential applications in RF design. In the general context of the multi–standard trend followed by wireless transceivers, TOSI based RF filters may offer the possibility of implementing reconfigurable devices. However, satisfying the telecommunications requirements is not an easy task therefore high order TOSI based filters should be implemented. Consequently, using good second order TOSI cells is a matter of the utmost importance and we propose a novel quality factor tuning principle which offers an almost independent tuning of self resonant frequency and quality factor for simulated inductors. An improved TOSI architecture with increased frequency capability is also reported.