Thesis (M.S.)--Rutgers University, 2009. / "Graduate Program in Electrical and Computer Engineering." Includes bibliographical references (p. 125-130).

Thesis (Ph. D.)--University of Missouri-Columbia, 1997. / Typescript. Vita. Includes bibliographical references (leaves 127-128). Also available on the Internet.

Thesis (M. Phil.)--University of Hong Kong, 2005. / Title proper from title frame. Also available in printed format.

Thesis (Ph. D.)--Lehigh University, 1999. / Includes vita. Includes bibliographical references (leaf 223).

Thesis (M.S.)--Rochester Institute of Technology, 1992. / Typescript. Includes bibliographical references (leaves 56-58).

Miniature Hybrid Microwave Integrated Circuits (MHMIC's) in conjunction with Monolithic MIC's (MMIC's) play an important role in modern telecommunication systems. Accurate, fast and reliable analysis tools are crucial to the design of MMIC's and MHMIC's. The space-spectral domain approach (SSDA) is such a numerically efficient method, which combines the advantage of the one-dimensional method of lines (MoL) with that of the one-dimensional spectral-domain method (SDM). In this dissertation, the basic idea of the SSDA is first introduced systematically. Then, a quasi-static deterministic variation of the SSDA is developed to analyze and design low dispersive 3-D MMIC's and MHMIC's. S-parameters and equivalent circuit elements for discontinuities are investigated. This includes air bridges, smooth transitions, open ends, step in width and gaps in coplanar waveguide (CPW) or microstrip type circuits. Experimental work is done to verify the simulation. The full-wave SSDA is a more generalized and field theoretically exact numerical tool to model also dispersive circuits. The new concept of self-consistent hybrid boundary conditions to replace the modal source concept in the feed line is used here. In parallel, a deterministic approach is developed. Scattering parameters for some multilayered planar discontinuities including dispersion effect are calculated to validate this method. / Graduate

The problem of electromagnetic field penetration in the finite-resistivity conductors of a uniform, multiple, coupled transmission line system (MTL) is considered. Under the assumption of quasi-transverse electric and magnetic (quasi-TEM) mode of propagation, the problem of determining the per-unit-length resistance and inductance matrices for such MTL systems reduces to solving a quasi-magnetostatic problem. An integral equation for the current density distribution inside the conductors is formulated and solved numerically using the method of moments. From straightforward energy considerations and the current density distribution, the per-unit-length resistance and inductance matrices are calculated. Several microstrip configurations are then analysed and the effects of the geometrical characteristics of the structures on the per-unit-length inductance and resistance matrices, as well as their frequency dependence are investigated.

No description available.

This dissertation is an account of experimental work conducted at the Microelectronics Research Laboratory of the Physics Department, Cambridge University. Structures have been studied, principally by electron microscopy, to assess the viability of a dual electron beam technique in the production of multiple layer structures. Silicon on insulator structures, where devices are made in individual islands of silicon on an insulating substrate, are of great use for many applications in microelectronics. One of these will be the use of multiple layers of devices in 'three dimensional' circuits. The dual electron beam technique is one way of producing silicon on insulator layers, and the experiments described here are performed on silicon films made by this method. For device applications, the silicon must be single crystal, and the technique uses seeding from a single crystal wafer. The film is grown by rapidly melting and recrystallizing a layer of polycrystalline silicon, and qualitative models of the regrowth process are presented. The results are also compared with quantitative models. Several investigations have been carried out to assess the suitability of the technique for producing stacked layers, where the recrystallization of upper layers must not adversely affect devices already formed in lower layers. The study has found that the dual electron beam technique is well suited to the formation of multiple silicon on insulator layers. The regrowth has been found to behave as predicted on a macroscopic scale, but shows features not previously observed when studied in detail. In particular, the existence of faceting of a submicron scale in the recrystallization front has been proven.

A general schematic method is developed for modeling the fundamental parameters of vacuum integrated circuits (VIC's), a new class of microelectronics devices. A summary of the history of thermionic integrated circuits (TIC's) is presented, along with a discussion of the heater and its effect on device performance. The effects of the base metal on the emission properties of cathodes which are a mixture of the emission carbonates and negative photo-resist are also considered. The amplification factor is determined by using either a first or second order model depending on the desired degree of accuracy. The transconductance and anode resistance may be calculated as well by using the perveance model of cathode current. The voltage scaling factor used in the design of small voltage operating devices is applied to the analysis of planar devices. Electrostatic interactions between devices are important in the design of vacuum integrated circuits. The percent interaction function is used to quantify the effects of DC and small signal electrostatic interactions. The effect of work function differences on the DC biasing of circuits is also considered. The pseudo-radial electrostatic (PREF) lens is used to direct the electrons in a quasi-circular orbit from cathode to anode. The PREF lens is utilized in designing a series of planar devices including current source, triode (diode), enhancement-mode and depletion-mode type devices. The theory and experimentally determined characteristics of these devices are presented in detail.