In recent years, there has been an increasing interest in the study of hydrophobic surfaces. Hydrophobic surfaces have been used in multiple applications in microfluidic devices due to their properties of self-cleaning, and also in deicing products. Conventionally, hydrophobic surfaces were created by laser cutting, self-assembly and other chemical processing methods. However, in most of these methods, hydrophobicity of the surface cannot be maintained for an extended time or restricted to limited set of materials. A low-cost, high-throughput method to generate highly hydrophobic anisotropic surface has been developed in this thesis which uses Computer Numerical Control (CNC) machining employing diamond tools whose tips have been micro-structured using Focused Ion Beam (FIB) built tips. The versatility of this method has been demonstrated by machining both metal and polymeric materials. Significant anisotropic wetting has been observed on the machined surface with the anisotropic contact angle can reach up to 71.6 degree and highly-hydrophobic property with contact angle of 163.1degree on 6061 Aluminum Alloy and 155.7 degree on PMMA surface. / Thesis / Master of Science in Mechanical Engineering (MSME)

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Ion beam erosion of solid surfaces is known to produce a variety of surface morpholo- gies, such as pits, mounds or crests. Very often self-organized patterns composed of highly correlated arrays of dots or ripples at sub-micrometer and nanometer length scale could be obtained. Ion beam erosion patterning have demonstrated the poten- tial to tailor related surface properties for optoelectronic and spintronic applications, such as modulated photoemission induced by quantum con¯nement of nanodots and magnetic anisotropy induced by nanoripples. On the other hand, one considerable practical importance and e®ect of ion beam erosion is that of surface smoothing of nanometer features, during etching or ¯lm deposition coincident with energetic species. In my dissertation, systematic investigations of ripple formation and smooth- ing during low energy Ar+ ion erosion of sapphire surfaces using synchrotron grazing incidence small angle x-ray scattering and atomic force microscopy are performed. It is found in the pattern formation that the wavelength of ripples can be varied over a remarkably wide range by changing the ion incidence angle. The ion induced viscous °ow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30±. The behavior at high temper- atures suggests relaxation by surface di®usion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface di®usion or viscous °ow relaxation. Furthermore, a real-time x- ray scattering experiment is presented showing that ion smoothing of a pre-patterned surface near normal incidence is consistent with the e®ect of a collision-induced lat- eral current. Quantitative agreement is obtained using ion-collision simulations to compute the magnitude of the surface current. The results lead to predictions for the surface morphology phase diagram as a function of ion beam energy and incidence angle that substantially agree with experimental observations. The ion-induced lat- eral current smoothing model is applicable to many surfaces that become amorphous but maintain the stoichiometry of bulk materials during ion bombardment.

The purposes of this thesis are to prepare ZnO and tin-doped In2O3 (ITO) films at low temperature and study their microstructure and optoelectronic properties. Low-temperature growth of undoped ZnO films with high transparency and low electrical resistance was prepared by ion beam sputtering. After systematic testing, a sheet resistivity as low as 2.95 x 10-3 £[-cm was obtained at a substrate temperature of 150 oC, ion source voltage of 850 V, and ion beam current of 30 mA. The transmittance of the ZnO films was in the range of 85-90%. Hall measurements showed that a high mobility of 21.41 cm2/Vs was obtained for films less than 200 nm thick. The related microstructures and physical properties were measured and discussed. ZnO nanofilm of (2-1-10) and (01-11) surfaces were prepared on NaCl (001) surface at 200 oC and 400 oC to produce nearly pure (2-1-10) and (01-11) textures respectively and the orientation relationships were determined and the interface discussed. By dissolving the NaCl substrate, the ZnO (2-1-10) and (01-11) surfaces several cm2 in area, which may have some useful applications, can be easily prepared. The photoluminescence spectrum from the (2-1-10) surface showed only a near-band-edge UV emission peak while the (01-11) surface showed a near band-edge UV emission and a broad green emission. Low-temperature preparation of transparent conducting electrode is essential for flexible optoelectronic devices. ITO films of high transparency and low electrical resistance were prepared at room temperature with a radio-frequency ion beam sputtering system. Specimens with a low sheet resistivity of 10-4 £[-cm and a high visible-light transmittance of 85-90% were obtained. Hall measurement was used to measure the mobility and carrier concentrations and the effects on resistivity were discussed. ITO films were deposited on glass substrates at 200 oC at various oxygen flow rates. At low oxygen flow rate the film surface has ITO whiskers with metallic In tips and a crystallographic relationship of (010)In//(110)ITO and (001)In//(001)ITO is present between them. The In tips act as the seeds for the growth of ITO whiskers by a vapor-liquid-solid growth mechanism. As the oxygen flow rate increases, the crystallinity of the ITO film decreases till an amorphous phase is formed. The microstructure, resistivity and transmittance of the films were studied as a function of oxygen flow rate. Thin films of high transmittance (~90%) and low resistivity (6 x 10-4 Ω-cm) were prepared at an intermediate oxygen flow rates.

Nanocrystalline £\-Zr condensates deposited by ion beam sputtering on the NaCl (100) surfaces and then annealed at 100 oC to 750 oC in air. The phases present were identified by transmission electron microscopy to be nanometer-size £\-Zr+ZrO¡B£\-Zr+ZrO+c-ZrO2¡Bc-ZrO2¡Bc-+t-ZrO2¡Bt-ZrO2¡Band t-+m-ZrO2 phase assemblages with increasing annealing temperature. The zirconia showed strong {100} preferred orientation due to parallel epitaxy with NaCl (100) when annealed between 150 oC and 500 oC in air. The c- and t-zirconia condensates also showed (111)-specific coalescence among themselves. The c- and/or t-ZrO2 formation can be accounted for by the small grain size, the presence of low-valence Zr cation and the lateral constraint of the neighboring grains.

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