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Agrin triggers the subsynaptic aggregation of acetylcholine receptor (AChR) via activation of the receptor tyrosine kinase MuSK (muscle-specific kinase). At present, the intracellular mechanisms utilized by MuSK to initiate such a complex process remain unknown. In the present study, I first tested if H-ras was involved in the process of synaptogenesis induced by agrin. The data presented suggest that ras could have a role in this process because a dominant inhibitory ras mutant (ras-N17) partially blocked the inductive effects of agrin while two activated ras mutants (ras-V12 and ras-V12-D38) induced agrin-independent AChR clusters. These effects were not due to major alterations in the levels of AChR, though more experiments are required to confirm these preliminary findings. / Second, I investigated whether the adaptor protein Shc was a downstream effector of activated MuSK. MuSK and Shc could be co-immunoprecipitated, but this association was not consistently observed nor was it modulated by agrin at all times. Generally, no alteration in Shc phosphotyrosine content was observed in response to agrin, and when an increase was detected, it was modest. Finally, agrin did not modulate the interaction between Shc and Grb2. Based on these results, I conclude that Shc interaction with MuSK is not regulated by agrin.

Access to abstract permanently restricted to Ball State community only. / Access to thesis permanently restricted to Ball State community only. / Department of Biology

A novel approach to the design of multi-junction solar cells on silicon substrates for 1-sun applications is described. Models for device simulation including porous silicon layers are presented. A silicon bottom subcell is formed by diffusion of dopants into a silicon wafer. The top of the wafer is porosified to create a compliant layer, and a III-V buffer layer is then grown epitaxially, followed by middle and top subcells. Due to the resistivity of the porous material, these designs are best suited to high efficiency 1-sun applications. Numerical simulations of a multi-junction solar cell incorporating a porous silicon compliant membrane indicate an efficiency of 30.7% under AM1.5G, 1-sun for low threading dislocation densities (TDD), decreasing to 23.7% for a TDD of 10^7 cm^-2.

At the author’s request, the abstract has been removed due to the confidential nature of the thesis. It will be added once the embargo period has passed.

In this thesis, I will present the experimental results of the dynamics of superconducting single electron transistors (sSETs), under the influence of tunable dissipation. The sSET, consisting of two dc SQUIDs in series and the third gate electrode, is deposited onto a GaAs/AlGaAs heterostructure which contains a two dimensional electron gas plane 100nm beneath the substrate surface. The Josephson coupling energy, charging energy and dissipation related Hamiltonian can all be tuned in situ, while keeping others unchanged. We measured the switching current statistics and the transport properties, as a function of the dissipation and gate charge at different temperatures. If the sSET is in the classical regime where phase is a good quantum variable, we found that the switching current and corresponding Josephson energy decrease as dissipation increases. Our observation agrees qualitatively with the theoretical calculation of a single Josephson junction with dominant Josephson energy, in a frequency dependent dissipative environment where energy barrier decreases as dissipation increases in thermally activated escape regime. This dissipation dependence result can be understood as the consequence of a reduced quantum fluctuations in the charge numbers. Whereas in the charging regime, the switching current shows a 1e periodicity with respect to gate charge, indicating a pronounced charging effect. At a specific gate charge number, quantum fluctuations of the phase variable are compressed as dissipation increases, resulting in an enhanced switching current and Josephson energy. This result matches the theory of a sSET capacitively coupled to a dissipative environment qualitatively. The temperature dependence of the switching current histogram indicates the existence of both quantum and classical thermal phase diffusion. Moreover, quantum charge fluctuations are minimized at the degeneracy point, causing a sharp dip on the width of the switching current histogram. For a sSET with comparable Josephson energy and charging energy, quantum fluctuations of both phase and charge variables are significant. The influence of dissipation on the dynamics of the device is distinct in the classical and charging regimes. Dissipation compresses quantum phase fluctuations in the charging regime, whereas reduces the quantum charge fluctuations in the classical regime. The transition between these two regimes is found to be determined by the tunnel resistance of the SQUID. The competition between Josephson and charging energies, however, is not the intrinsic parameter of this transition. Our results imply that a detailed theoretical calculation of a sSET with comparable Josephson coupling energy and charging energy under the influence of dissipation is needed.

In the research described in this thesis, two molecular layers were successfully anchored on carbon surfaces (pyrolyzed photoresist films, PPFs) sequentially through two independent approaches. The first molecular layer, styrene, was covalently bonded on PPF surfaces via the method of reduction of in situ generated diazonium ions. The resulting molecular films were characterized by AFM measurements, and catechol and ferrocyanide voltammetry. The second molecular layer, ferrocene-thiol, was anchored on top of the first molecular layer through the method of thiol-ene reaction, which is an effective method for building up multilayers through layer-by-layer assembly. As ferrocene is an electrochemically active species, quantitative surface coverage was calculated according to the amount of surface-bound ferrocene through electrochemical measurements. Finally, molecular junctions were fabricated by depositing metal top contacts based on the molecular layers through electron-beam evaporation and the electronic characteristics of these molecular junctions were investigated.

Thesis (M.S. in Electrical Engineering)--Vanderbilt University, Dec. 2007. / Title from title screen. Includes bibliographical references.

Dissertation (Ph.D.).--University of Texas Graduate School of Biomedical Sciences at San Antonio, 2008. / Vita. Includes bibliographical references.

Zugl.: Giessen, Universiẗat, Diss., 2008.