Ferroelectric (FE) HfO₂-based thin films, which are considered as one of the most promising material systems for memory device applications, exhibit an adverse tendency for strong imprint. Manifestation of imprint is a shift of the polarization–voltage (P–V) loops along the voltage axis due to the development of an internal electric bias, which can lead to the failure of the writing and retention functions. Here, to gain insight into the mechanism of the imprint effect in La-doped HfO₂ (La:HfO₂) capacitors, we combine the pulse switching technique with high-resolution domain imaging by means of piezoresponse force microscopy. This approach allows us to establish a correlation between the macroscopic switching characteristics and domain time–voltage-dependent behavior. It has been shown that the La:HfO₂ capacitors exhibit a much more pronounced imprint compared to Pb(Zr,Ti)O₃-based FE capacitors. Also, in addition to conventional imprint, which evolves with time in the poled capacitors, an easily changeable imprint, termed as “fluid imprint”, with a strong dependence on the switching prehistory and measurement conditions, has been observed. Visualization of the domain structure reveals a specific signature of fluid imprint—continuous switching of polarization in the same direction as the previously applied field that continues a long time after the field was turned off. This effect, termed as “inertial switching”, is attributed to charge injection and subsequent trapping at defect sites at the film–electrode interface.

2D transition metal carbides and/or nitrides, so-called MXenes, are noted as ideal fast-charging cation-intercalation electrode materials, which nevertheless suffer from limited specific capacities. Herein, it is reported that constructing redox-active phosphorus−oxygen terminals can be an attractive strategy for Nb4C3 MXenes to remarkably boost their specific capacities for ultrafast Na+ storage. As revealed, redox-active terminals with a stoichiometric formula of PO2- display a metaphosphate-like configuration with each P atom sustaining three P-O bonds and one P=O dangling bond. Compared with conventional O-terminals, metaphosphate-like terminals empower Nb4C3 (denoted PO2-Nb4C3) with considerably enriched carrier density (fourfold), improved conductivity (12.3-fold at 300 K), additional redox-active sites, boosted Nb redox depth, nondeclined Na+-diffusion capability, and buffered internal stress during Na+ intercalation/de-intercalation. Consequently, compared with O-terminated Nb4C3, PO2-Nb4C3 exhibits a doubled Na+-storage capacity (221.0 mAh g-1), well-retained fast-charging capability (4.9 min at 80% capacity retention), significantly promoted cycle life (nondegraded capacity over 2000 cycles), and justified feasibility for assembling energy−power-balanced Na-ion capacitors. This study unveils that the molecular-level design of MXene terminals provides opportunities for developing simultaneously high-capacity and fast-charging electrodes, alleviating the energy−power tradeoff typical for energy-storage devices.

A 2T2C ferroelectric memory cell consisting of a select transistor, a read transistor and two ferroelectric capacitors that can be operated either in FeRAM mode or in memristive ferroelectric tunnel junction mode is proposed. The two memory devices can be programmed individually. By performing a combined readout operation, the two stored bits of the memory cells can be combined to perform in-memory logic operation. Moreover, additional input logic signals that are applied as external readout voltage pulses can be used to perform logic operation together with the stored logic states of the ferroelectric capacitors. Electrical characterization results of the logic-in-memory (LiM) functionality is presented.

A 2TnC ferroelectric memory gain cell consisting of two transistors and two or more ferroelectric capacitors (FeCAP) is proposed. While a pre-charge transistor allows to access the single cell in an array, the read transistor amplifies the small read signals from small-scaled FeCAPs that can be operated either in FeRAM mode by sensing the polarization reversal current, or in ferroelectric tunnel junction (FTJ) mode by sensing the polarization dependent leakage current. The simultaneous read or write operation of multiple FeCAPs is used to realize compute-in-memory (CiM) algorithms that enable processing of data being represented by both, non-volatilely internally stored data and externally applied data. The internal gain of the cell mitigates the need for 3D integration of the FeCAPs, thus making the concept very attractive especially for embedded memories. Here we discuss design constraints of the 2TnC cell and present the proof-of-concept for realizing versatile (CiM) approaches by means of electrical characterization results.