Nos últimos anos, acentuou-se o interesse em materiais semicondutores com alto número atômico e alto gap de energia para aplicações na detecção de radiação ionizante à temperatura ambiente, usando o método direto de detecção. Este trabalho apresentara as características de dois materiais semicondutores na forma de filme para o iodeto de chumbo e de cristal milimétrico para o iodeto de mercúrio. Os filmes foram depositados a partir da evaporadora térmica construída no próprio departamento e caracterizados em função de três distâncias de deposição. O melhor filme obtido foi produzido a 5 cm de distância da fonte, apresentando valores de gap de energia de 2,39 eV e energia de ativação de 1,1 eV. Com o aumento dessa distância as propriedades estruturais, ópticas e elétricas se deterioram, inclusive com variação da composição do material. Os cristais de iodeto de mercúrio foram dissolvidos no solvente orgânico N-N Dimetilformamida e crescidos utilizando a técnica de deposição de solvente. Diferentes taxas de crescimento foram usadas para o crescimento dos cristais. Os melhores resultados foram obtidos para crescimento na estufa a 80ºC, produzindo filmes com gap de energia de 2,2 eV e resistividade da ordem de 108 ?.cm, indicando dopagem não intencional ou excesso de defeitos. A composição obtida é de HgI3, e a razão da fotocorrente pela corrente de escuro quando na faixa de raios-X mamográficos é da ordem de 25. Com as otimizações indicadas no texto e na conclusão do trabalho esses materiais seriam fortes candidatos para aplicações comerciais em imagens médicas para energias na faixa mamográfica. / In the last years there has been a growing interest in semiconductor materials with high atomic number and optical band gap for applications as ionizing radiation detectors at room temperature, using the direct method of detection. Some materials such as lead iodide (PbI2) and mercury iodide (HgI2) have an optical band gap above 2,0 eV, operate at room temperature with low noise and low leakage current, present a high carrier mobility and high stopping power for ionizing radiation. Alternative methods are investigated by several researchers for the fabrication of these materials on top of large areas, with low fabrication time and costs as desirable for applications in medical imaging. In this sense, we present two methods for the development of the detectors. Thermal evaporation, with the development of the deposition system and chamber, is used for the fabrication of lead iodide thin films. The properties of the films were investigated as a function of deposition height. On the other hand, isothermal evaporation was used for the fabrication of mercury iodide milimetric crystals, for the first time using the organic solvent N.N- dimetilformamide (DMF). The properties of the crystals are investigated as a function of concentration and growth temperature. The structural, morphological and compositional properties of the films and crystals were investigated. The optical and electrical properties were also investigated for both films and crystals. The activation energy for electric transport and the test of the materials as sensors (using X-rays in the mammographic region) were studied. This work presents the main results for both materials: films of lead iodide and milimetric crystals of mercury iodide. The crystalline planes of the films have a preferential orientation along the (110) direction, and a morphology of vertical leaves, not similar to other reported results. The obtained composition is PbI2,5. The combination of the morphology and the configuration of co-planar contacts for charge collection reduce the sensitivity to X-rays exposure. A current density ratio (illuminated to dark) of the order of 1.53 was obtained. The best film was deposited at a distance of 5 cm to the source, and it has an optical gap of 2,39 eV and activation energy of 1,1 eV. With increasing deposition distance a degradation of the structural, optical and electrical properties was observed, even with the variation of the composition of the films. For mercury iodide, for any growth rate the shape of the crystals is always cubic. The morphology of the surface depends on the evaporation rate (it can be smooth or present macroscopic holes). The best results were obtained for a growth at 80o C, what leads to a crystal with optical gap of 2.2 eV and electrical resistivity of the order of 108 Ohmcm, what suggests non-intentional doping or excess of defects. The obtained composition was HgI3, and the current ratio (illuminated by mammographic X-rays to dark) was about 25. According to the discussions in the text and in the conclusions, the suggested optimizations could lead to the development of materials that might be useful for technological applications in medical imaging for the mammographic energy range.

Nos últimos anos, acentuou-se o interesse em materiais semicondutores com alto número atômico e alto gap de energia para aplicações na detecção de radiação ionizante à temperatura ambiente, usando o método direto de detecção. Este trabalho apresentara as características de dois materiais semicondutores na forma de filme para o iodeto de chumbo e de cristal milimétrico para o iodeto de mercúrio. Os filmes foram depositados a partir da evaporadora térmica construída no próprio departamento e caracterizados em função de três distâncias de deposição. O melhor filme obtido foi produzido a 5 cm de distância da fonte, apresentando valores de gap de energia de 2,39 eV e energia de ativação de 1,1 eV. Com o aumento dessa distância as propriedades estruturais, ópticas e elétricas se deterioram, inclusive com variação da composição do material. Os cristais de iodeto de mercúrio foram dissolvidos no solvente orgânico N-N Dimetilformamida e crescidos utilizando a técnica de deposição de solvente. Diferentes taxas de crescimento foram usadas para o crescimento dos cristais. Os melhores resultados foram obtidos para crescimento na estufa a 80ºC, produzindo filmes com gap de energia de 2,2 eV e resistividade da ordem de 108 ?.cm, indicando dopagem não intencional ou excesso de defeitos. A composição obtida é de HgI3, e a razão da fotocorrente pela corrente de escuro quando na faixa de raios-X mamográficos é da ordem de 25. Com as otimizações indicadas no texto e na conclusão do trabalho esses materiais seriam fortes candidatos para aplicações comerciais em imagens médicas para energias na faixa mamográfica. / In the last years there has been a growing interest in semiconductor materials with high atomic number and optical band gap for applications as ionizing radiation detectors at room temperature, using the direct method of detection. Some materials such as lead iodide (PbI2) and mercury iodide (HgI2) have an optical band gap above 2,0 eV, operate at room temperature with low noise and low leakage current, present a high carrier mobility and high stopping power for ionizing radiation. Alternative methods are investigated by several researchers for the fabrication of these materials on top of large areas, with low fabrication time and costs as desirable for applications in medical imaging. In this sense, we present two methods for the development of the detectors. Thermal evaporation, with the development of the deposition system and chamber, is used for the fabrication of lead iodide thin films. The properties of the films were investigated as a function of deposition height. On the other hand, isothermal evaporation was used for the fabrication of mercury iodide milimetric crystals, for the first time using the organic solvent N.N- dimetilformamide (DMF). The properties of the crystals are investigated as a function of concentration and growth temperature. The structural, morphological and compositional properties of the films and crystals were investigated. The optical and electrical properties were also investigated for both films and crystals. The activation energy for electric transport and the test of the materials as sensors (using X-rays in the mammographic region) were studied. This work presents the main results for both materials: films of lead iodide and milimetric crystals of mercury iodide. The crystalline planes of the films have a preferential orientation along the (110) direction, and a morphology of vertical leaves, not similar to other reported results. The obtained composition is PbI2,5. The combination of the morphology and the configuration of co-planar contacts for charge collection reduce the sensitivity to X-rays exposure. A current density ratio (illuminated to dark) of the order of 1.53 was obtained. The best film was deposited at a distance of 5 cm to the source, and it has an optical gap of 2,39 eV and activation energy of 1,1 eV. With increasing deposition distance a degradation of the structural, optical and electrical properties was observed, even with the variation of the composition of the films. For mercury iodide, for any growth rate the shape of the crystals is always cubic. The morphology of the surface depends on the evaporation rate (it can be smooth or present macroscopic holes). The best results were obtained for a growth at 80o C, what leads to a crystal with optical gap of 2.2 eV and electrical resistivity of the order of 108 Ohmcm, what suggests non-intentional doping or excess of defects. The obtained composition was HgI3, and the current ratio (illuminated by mammographic X-rays to dark) was about 25. According to the discussions in the text and in the conclusions, the suggested optimizations could lead to the development of materials that might be useful for technological applications in medical imaging for the mammographic energy range.

Neste trabalho descreve-se o estudo do estabelecimento de uma técnica para o crescimento e preparo de cristais de HgI2, com o intuito de utilizá-los como detectores semicondutores de radiação que operam a temperatura ambiente. Três métodos de crescimento de cristais foram estudados no desenvolvimento deste trabalho: (1) Transporte Físico de Vapor (Physical Vapor Transport PVT), (2) Solução Saturada de HgI2 empregando dois solventes distintos; Dimetil Sulfóxido (DMSO) (a) e acetona (b) e (3) método de Bridgman. A fim de avaliar os cristais de HgI2 desenvolvidos pelos três métodos, medidas sistemáticas foram realizadas para determinar a estrutura, o plano de orientação, a estequiometria, a morfologia da superfície e as impurezas do cristal. A influência destas propriedades físico-químicas sobre os cristais desenvolvidos foi avaliada em termos de desempenho como detector de radiação. Os difratogramas indicaram que os cristais estão orientados preferencialmente planos (001) e (101) com estrutura tetragonal para todos os cristais desenvolvidos. No entanto, a morfologia com menor nível de deformação foi observada para o cristal obtido pela técnica de PVT. Uma uniformidade na camada de superfície do cristal de PVT foi observada, enquanto na superfície do cristal de DMSO podem ser nitidamente encontradas incrustações de elementos distintos ao cristal. A melhor resposta de radiação foi encontrada para os cristais crescidos pela PVT. Significativa melhora no desempenho do detector de radiação de HgI2 foi encontrada, purificando o cristal por meio de dois crescimentos sucessivos, pela técnica de PVT. / In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: (1) Physical Vapor Transport (PVT); (2) Saturated Solution of HgI2, using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and (3) the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgIz2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique.

Neste trabalho descreve-se o estudo do estabelecimento de uma técnica para o crescimento e preparo de cristais de HgI2, com o intuito de utilizá-los como detectores semicondutores de radiação que operam a temperatura ambiente. Três métodos de crescimento de cristais foram estudados no desenvolvimento deste trabalho: (1) Transporte Físico de Vapor (Physical Vapor Transport PVT), (2) Solução Saturada de HgI2 empregando dois solventes distintos; Dimetil Sulfóxido (DMSO) (a) e acetona (b) e (3) método de Bridgman. A fim de avaliar os cristais de HgI2 desenvolvidos pelos três métodos, medidas sistemáticas foram realizadas para determinar a estrutura, o plano de orientação, a estequiometria, a morfologia da superfície e as impurezas do cristal. A influência destas propriedades físico-químicas sobre os cristais desenvolvidos foi avaliada em termos de desempenho como detector de radiação. Os difratogramas indicaram que os cristais estão orientados preferencialmente planos (001) e (101) com estrutura tetragonal para todos os cristais desenvolvidos. No entanto, a morfologia com menor nível de deformação foi observada para o cristal obtido pela técnica de PVT. Uma uniformidade na camada de superfície do cristal de PVT foi observada, enquanto na superfície do cristal de DMSO podem ser nitidamente encontradas incrustações de elementos distintos ao cristal. A melhor resposta de radiação foi encontrada para os cristais crescidos pela PVT. Significativa melhora no desempenho do detector de radiação de HgI2 foi encontrada, purificando o cristal por meio de dois crescimentos sucessivos, pela técnica de PVT. / In this work, the establishment of a technique for HgI growth and preparation of crystals, for use as room temperature radiation semiconductor detectors is described. Three methods of crystal growth were studied while developing this work: (1) Physical Vapor Transport (PVT); (2) Saturated Solution of HgI2, using two different solvents; (a) dimethyl sulfoxide (DMSO) and (b) acetone, and (3) the Bridgman method. In order to evaluate the obtained crystals by the three methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physical chemical properties on the crystals development was studied, evaluating their performance as radiation detectors. The X-ray diffractograms indicated that the crystals were, preferentially, oriented in the (001) e (101) directions with tetragonal structure for all crystals. Nevertheless, morphology with a smaller deformation level was observed for the crystal obtained by the PVT technique, comparing to other methods. Uniformity on the surface layer of the PVT crystal was detected, while clear incrustations of elements distinct from the crystal could be viewed on the DMSO crystal surface. The best results as to radiation response were found for the crystal grown by physical vapor transport. Significant improvement in the HgIz2 radiation detector performance was achieved for purer crystals, growing the crystal twice by PVT technique.

The work deals with the theory of preparing perovskite solar cells. How about basic structures and the specific types of training opportunities and reproducibility of results. In the third part describes the complete preparation of the article, which reached the highest efficiency and the procedure for subsequent repetition of the experiment