31 |
Novel channel materials for Si based MOS devices Ge, strained Si and hybrid crystal orientations /Joshi, Sachin Vineet, January 1900 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.
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32 |
Analysis of power requirements inside of NMOS integrated circuits /Wilson, Jeffrey, January 1986 (has links)
Thesis (M.S.)--Oregon Graduate Center, 1986.
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33 |
MOSSTAT An interactive static rule checker for MOS VLSI designs /Johnson, Timothy E., January 1986 (has links)
Thesis (M.S.)--Oregon Graduate Center, 1986.
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34 |
The design of a CMOS sensor camera system for a nanosatellite /Baker, Eric Albert. January 2006 (has links)
Thesis (MScIng)--University of Stellenbosch, 2006. / Bibliography. Also available via the Internet.
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DESIGN, FABRICATION AND CHARACTERISTICS OF THE N-WELL CMOS PROCESS.Hsieh, Jaw-Haw. January 1983 (has links)
No description available.
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36 |
Some experimental studies of neutron irradiation and beryllium implantation induced defects in 6H-SiC陳旭東, Chen, Xudong. January 2001 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
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37 |
A study on gate dielectrics for Ge MOS devicesLi, Chunxia, 李春霞 January 2010 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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38 |
NOISE AT SUBTHRESHOLD CURRENT IN MOS DEVICES.Hojabri, Pirooz. January 1985 (has links)
No description available.
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39 |
Charge transfer characteristic of zinc oxide nanowire devices and their applicationsChun, Young Tea January 2015 (has links)
No description available.
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40 |
Design automation of RF CMOS low noise amplifiersTulunay, Gülin. January 1900 (has links)
Thesis (Ph.D.)--University of Nebraska-Lincoln, 2007. / Title from title screen (site viewed Dec. 5, 2007). PDF text: xi, 166 p. : ill. ; 9 Mb. UMI publication number: AAT 3273922. Includes bibliographical references. Also available in microfilm and microfiche formats.
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