71 |
Novel channel materials for Si based MOS devices : Ge, strained Si and hybrid crystal orientationsJoshi, Sachin Vineet, 1981- 23 August 2011 (has links)
Not available / text
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72 |
Investigation of inversion layer mobility in N-channel mosfets with thin gate oxide陳添華, Chan, Tim-wah. January 1984 (has links)
published_or_final_version / Electrical Engineering / Master / Master of Philosophy
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73 |
Electrical reliability of N-Mos devices with N2O-based oxides as gate dielectricsZeng, Xu, 曾旭 January 1996 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
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74 |
Single donor detection in silicon nanostructuresGonzález Zalba, Miguel Fernando January 2013 (has links)
No description available.
|
75 |
CMOS digital circuit test generation for transistor level and gate-level implementationKim, Dong-Wook 08 1900 (has links)
No description available.
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76 |
A quasi-monolithic optical receiver using a standard digital CMOS technologyLee, Myunghee 05 1900 (has links)
No description available.
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77 |
A high speed, high resolution, self-clocked voltage comparator in a standard digital CMOS processDowlatabadi, Ahmad Baghai 05 1900 (has links)
No description available.
|
78 |
A low noise CMOS voltage referenceHolman, William Timothy 12 1900 (has links)
No description available.
|
79 |
A switched-current filter in digital-CMOS technology with low charge-injection errorsBalachandran, Ganesh Kumar 12 1900 (has links)
No description available.
|
80 |
Power and performance optimization of static CMOS circuits with process variationLu, Yuanlin. January 2007 (has links) (PDF)
Thesis (Ph.D.)--Auburn University, 2007. / Abstract. Vita. Includes bibliographic references (ℓ. 118-127)
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