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Nanoscale metal thin film dewetting via laser treatment is studied in this dissertation. The purpose is to understand: 1) the spatial and temporal nature of intrinsic instabilities; and 2) mass transportation involved in dewetting pattern evolution in metal thin films as well as in lithographically patterned nanostructures; and finally 3) to explore advanced control of metallic nanostructure fabrication via the confluence of top down nanolithography and pulsed laser induced dewetting. This study includes three sections. In first section, thin film Cu-Ni alloys ranging from 2-8nm were synthesized and laser irradiated. The evolution of the spinodal dewetting process is investigated as a function of the thin film composition which ultimately dictates the size distribution and spacing of the nanoparticles, and the optical measurements of the copper rich alloy nanoparticles revealed characteristic plasmonic peaks. In section two, the dewetting behavior of nanolithographically patterned copper rings on Silicon substrate was studied. The self assembly of the rings into ordered nanoparticle/nanodrop arrays was accomplished via nanosecond pulsed laser heating. The resultant length scale of the 13nm and 7nm thick copper rings was correlated to the competition between transport and instabilities time scales during the liquid lifetime of the melted copper rings. To explore the influence of different substrates with different surface energy, the pulsed laser heated assembly of lithographically patterned copper rings on SiO2 substrate was studied in the last section. The correlated transport and instabilities show modified timescales. It is demonstrated again that the original geometry dictates the instability pathway, which for narrow rings obeys the Rayleigh-Plateau instability and for wider rings are influenced by the thin film instability.

This thesis presents a thermal gradient gas chromatography (TGGC) system that is implemented on a micro-scale. The GC column is approximately 20 cm long and is fabricated out of silicon with 21 nickel thin-film heaters evenly placed along the length of the column. Computational heat transfer models using ANSYS Mechanical APDL predict heating and cooling rates up to 32,000 deg C/min and 3,600 deg C/min, respectively. These results are verified through testing an experimental silicon channel. A PI controller which uses resistance measurements to calculate thin-film temperature is used for obtaining dynamic thermal gradient control. This controller is shown to possess a characteristic rise time of approximately 0.3 seconds with less than 4% overshoot and precision to within less than a degree. These characteristics present this system as a highly favorable candidate for a micro-GC column with resolution similar to that of conventional GC.

Reliability, besides the performance, is one of the important key factors of success of any technology. While a product should perform at best as desired, it must also be capable of working for intended period of life without any degradation or wear-out failure, caused by any operational parameter. For example it does no good to manufacture a super fast microprocessor if that fails within few seconds. For the product to meet the intended reliability we must understand the mechanisms that lead to unreliability or failure of the devices. The efforts to understand the fundamental physics of the mechanisms that lead to the failure of the devices has developed a branch of physics named as “reliability physics” of “physics of failure”. On the basis of the understanding of failure mechanism, new design rule can be followed and new material can be applied to improve the reliability of the product. Microelectronic technology also, which is one of the fastest growing technology, has been facing challenges posed by the reliability issues from time to time. There are number of physical failure mechanisms that can affect the reliability of a microelectronic device. Time dependent dielectric breakdown (TDDB), hot carrier damage and current induced damage of interconnects are only to name a few common mechanisms. Among these, the failure of interconnects due to current has been the oldest and persistence reliability issue since the beginning of development of the microelectronic technology. Understanding the physics of the processes that lead to failure of a current carrying film is the main interest of this thesis work. In this investigation, we have carried out a systematic study to understand stability of metal nanowires against damage caused by current stressing and its size dependency. We observe the wires of smaller diameter, having an electronic mean free path larger than or comparable to its diameter are more stable against current stressing. In wires of larger diameter (100 nm or more) the probability of the damage is more. This probably is due to presence of grain boundary type extended defects that allow low energy diffusion path. To our knowledge this is the first experimental investigation to study the stability of nanowires against high current and in-situ measurement of noise during current stressing on them. In the previous investigations by other groups observed that the nanowires without any passivation got damaged by stressing current density which was even lower than the one we used for stressing. To our knowledge this is the first observation of long lasting stability of nanowires, of dimension down to 15 nm, when they are encapsulated in dielectric, an environment that an interconnect has to see in the real integrated circuit devices. In the second chapter we will describe the sample preparation method, characterization of samples and the experimental setups we had used. The results of in-situ noise measurement are described in the third chapter. We will describe our in-situ scanning thermal microscopy study in the fourth chapter. Then in the fifth chapter, we will present our simulation investigations on current induced damage of film. Finally, we will put the concluding remarks on this thesis work and the results in the sixth chapter. We have studied similar damage processes in metal nanowires also. In an appendix we will present our approach and major results of this investigation.