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Methods for the development of a DNA based nanoelectronicsSeidel, Ralf. Unknown Date (has links) (PDF)
Techn. University, Diss., 2004--Dresden.
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Dünne tantalbasierte Diffusionsbarrieren für die Kupfer-Leitbahntechnologie: thermische Stabilität, Ausfallmechanismen und Einfluss auf die Mikrostruktur des MetallisierungsmaterialsHübner, René Unknown Date (has links) (PDF)
Techn. Universiẗat, Diss., 2004--Dresden.
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Herstellung, Charakterisierung und Bewertung leitfähiger Diffusionsbarrieren auf Basis von Tantal, Titan und Wolfram für die Kupfermetallisierung von SiliciumschaltkreisenBaumann, Jens January 2003 (has links) (PDF)
Zugl.: Chemnitz, Techn. Univ., Diss., 2003
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Simulation von Lötprozessen beim Metall-Keramik-LötenSchüler, Heiko. Unknown Date (has links) (PDF)
Techn. Universiẗat, Diss., 2002--Chemnitz.
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A Study of Tungsten Metallization for the Advanced BEOL InterconnectionsChen, James Hsueh-Chung, Fan, Susan Su-Chen, Standaert, Theodorus E., Spooner, Terry A., Paruchuri, Vamsi 22 July 2016 (has links) (PDF)
In this paper, a study of tungsten metallization in advanced BEOL interconnects is presented. A mature 10 nm process is used for comparison between the tungsten and conventional copper metallization. Wafers were processed together till M1 dual-damascene etch then separated for different metallization. Tungsten metal line of 24 nm width is showing a 1.6X wire resistance comparing to the copper metal line. Comparable opens/shorts yield were obtained on a 0.8 M comb serpentine, Kelvin-via and 4K via chains. Similar physical profile were also achieved. This study has demonstrated the feasibility of replacing the copper by tungsten at BEOL using the conventional tungsten metallization tools and processes. This could be a cost- effective solution for the low-power products.
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Untersuchungen zur Sensibilisierung von Glasoberflächen mit Zinkoxid für das electroless plating von Nickel-Phosphor-Schichten unter besonderer Beachtung des Einsatzes derartiger Metallschichten als Elektroden in elektrochemischen SensorenReinecke, Matthias 13 July 2009 (has links) (PDF)
In der Halbleitertechnik, wie auch in der chemischen Sensorik werden Metallstrukturen mit geringen Strukturbreiten auf Substratoberflächen mit sehr niedriger mittlerer Rauhtiefe (wie Glas bzw. polierten Siliziumeinkristallen) benötigt. Die für diesen Zweck industriell angewandten Verfahren sind solche, die mit einer Abscheidung aus der Gasphase arbeiten (PVD, CVD). In der vorgelegten Arbeit werden zwei Varianten zur Sensibilisierung von Silikatglasoberflächen mit Zinkoxid für das electroless plating von Nickel-Phosphor-Schichten beschrieben. Die Strukturierung erfolgte mit einem photolithographischen Prozess. Die so sensibilisierten Glasoberflächen wurden in einer sauren Palladiumchloridlösung aktiviert und in einer alkalischen Lösung mit Nickel-Phosphor metallisiert. Nach dem elektrolytischen Abscheiden einer Gold- bzw. Silberschicht sind elektrochemische Untersuchungen zur (Langzeit-)Stabilität der Schichtsysteme durchgeführt worden, in deren Verlauf der Nachweis der Eignung für den Einsatz als Elektroden in elektrochemischen Sensoren erbracht worden ist.
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Charakterisierung und Optimierung von LTCC-Substraten und Metallisierungssystemen für HöchstfrequenzanwendungenBittner, Achim January 2009 (has links)
Zugl.: Saarbrücken, Univ., Diss., 2009
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Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of CopperWaechtler, Thomas, Shen, Yingzhong, Jakob, Alexander, Ecke, Ramona, Schulz, Stefan E., Wittenbecher, Lars, Sterzel, Hans-Josef, Tiefensee, Kristin, Oswald, Steffen, Schulze, Steffen, Lang, Heinrich, Hietschold, Michael, Gessner, Thomas 16 March 2006 (has links) (PDF)
Copper has become the material of choice
for metallization of high-performance
ultra-large scale integrated circuits.
As the feature size is
continuously decreasing, metal-organic
chemical vapor deposition (MOCVD) appears
promising for depositing the Cu seed
layer required for electroplating, as well
as for filling entire interconnect structures.
In this work, four novel organophosphane
and organophosphite Cu(I) trifluoroacetates
were
studied as precursors for Cu MOCVD. Details
are reported on CVD results obtained with
Tris(tri-n-butylphosphane)copper(I)trifluoroacetate,
(<sup>n</sup>Bu<sub>3</sub>P)<sub>3</sub>CuO<sub>2</sub>CCF<sub>3</sub>.
Solutions of this
precursor with acetonitrile and isopropanol
were used for deposition experiments
on 100 mm Si wafers sputter-coated with Cu,
Cu/TiN, and Al(2 % Si)/W. Experiments
were carried out in a cold-wall reactor at
a pressure of 0.7 mbar, using a
liquid delivery approach for precursor dosage.
On Cu seed layers, continuous films were
obtained at low deposition rates (0.5 to
1 nm/min). At temperatures above 320°C,
hole formation in the Cu films was observed.
Deposition on TiN led to the formation of
single copper particles and etching of the
TiN, whereas isolating aluminum oxyfluoride
was formed after deposition on Al(Si)/W. It
is concluded that the formation of CF<sub>3</sub>
radicals during decarboxylation has a
negative effect on the deposition results.
Furthermore, the precursor chemistry needs
to be improved for a higher volatility of
the complex.
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Optical Properties of Sputtered Tantalum Nitride Films Determined by Spectroscopic EllipsometryWaechtler, Thomas, Gruska, Bernd, Zimmermann, Sven, Schulz, Stefan E., Gessner, Thomas 16 March 2006 (has links) (PDF)
Tantalum and tantalum nitride thin films are
routinely applied as diffusion barriers in
state-of-the-art metallization systems of
microelectronic devices. In this work, such films
were prepared by reactive magnetron sputtering
on silicon and oxidized silicon substrates and
studied by spectroscopic ellipsometry in the
spectral range from 190 nm to
2.55 μm.
The complex refractive index for thick films
(75 to 380 nm) was modeled using a
Lorentz-Drude approach. These models were
applied to film stacks of
20 nm TaN / 20 nm Ta on
unoxidized and thermally oxidized Si.
With free oscillator parameters, accurate values
of the film thicknesses were obtained according
to cross-sectional scanning electron microscope (SEM)
measurements. At the same time, a strong
variation of the optical properties with film
thickness and substrate was observed.
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Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of CopperWaechtler, Thomas, Shen, Yingzhong, Jakob, Alexander, Ecke, Ramona, Schulz, Stefan E., Wittenbecher, Lars, Sterzel, Hans-Josef, Tiefensee, Kristin, Oswald, Steffen, Schulze, Steffen, Lang, Heinrich, Hietschold, Michael, Gessner, Thomas 16 March 2006 (has links)
Copper has become the material of choice
for metallization of high-performance
ultra-large scale integrated circuits.
As the feature size is
continuously decreasing, metal-organic
chemical vapor deposition (MOCVD) appears
promising for depositing the Cu seed
layer required for electroplating, as well
as for filling entire interconnect structures.
In this work, four novel organophosphane
and organophosphite Cu(I) trifluoroacetates
were
studied as precursors for Cu MOCVD. Details
are reported on CVD results obtained with
Tris(tri-n-butylphosphane)copper(I)trifluoroacetate,
(<sup>n</sup>Bu<sub>3</sub>P)<sub>3</sub>CuO<sub>2</sub>CCF<sub>3</sub>.
Solutions of this
precursor with acetonitrile and isopropanol
were used for deposition experiments
on 100 mm Si wafers sputter-coated with Cu,
Cu/TiN, and Al(2 % Si)/W. Experiments
were carried out in a cold-wall reactor at
a pressure of 0.7 mbar, using a
liquid delivery approach for precursor dosage.
On Cu seed layers, continuous films were
obtained at low deposition rates (0.5 to
1 nm/min). At temperatures above 320°C,
hole formation in the Cu films was observed.
Deposition on TiN led to the formation of
single copper particles and etching of the
TiN, whereas isolating aluminum oxyfluoride
was formed after deposition on Al(Si)/W. It
is concluded that the formation of CF<sub>3</sub>
radicals during decarboxylation has a
negative effect on the deposition results.
Furthermore, the precursor chemistry needs
to be improved for a higher volatility of
the complex.
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