by Shih La Hung Richard. / Thesis submitted in: July 2003. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references (leaves 143-146). / Abstracts in English and Chinese. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgement --- p.iv / Table of Content --- p.vi / List of Figures --- p.xiii / List of Tables --- p.xxii / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Background of study --- p.1 / Chapter 1.1.1 --- The lead-free movement in electronic industry --- p.1 / Chapter 1.1.2 --- The flip-chip technology --- p.2 / Chapter 1.1.3 --- The using of the lead-free solder for flip-chip application --- p.6 / Chapter 1.2 --- roblems and concerns of lead-free flip-chip technology --- p.7 / Chapter 1.2.1 --- UBM and the tin-copper intermetallic at the UBM/lead-free solder interface --- p.7 / Chapter 1.2.2 --- Tin-nickel intermetallic compound --- p.10 / Chapter 1.2.3 --- The formation of tin-nickel-copper intermetallic compound at the interface of tin-silver-copper bump on nickel UBM --- p.12 / Chapter 1.3 --- Review of the common intermetallic compoundsl --- p.3 / Chapter 1.3.1 --- Tin-copper intermetallic compound --- p.13 / Chapter 1.3.2 --- Tin-nickel intermetallic compound --- p.16 / Chapter 1.3.3 --- Tin-nickel-copper intermetallic compound --- p.18 / Chapter 1.4 --- The motivations and objectives of the study --- p.20 / Chapter Chapter 2 --- Experimentation / Chapter 2.1 --- Introduction --- p.23 / Chapter 2.2 --- Fabrication of wafer bumps --- p.24 / Chapter 2.2.1 --- Wafer lithographyrocess --- p.24 / Chapter 2.2.2 --- Electroplatingrocess --- p.29 / Chapter 2.2.3 --- hotoresist stripping --- p.31 / Chapter 2.2.4 --- Etching of sputtered Cu --- p.33 / Chapter 2.2.5 --- The samplereparation for tin-silver-copper solder --- p.35 / Chapter 2.2.6 --- The reflow of electroplated bumps --- p.35 / Chapter 2.3 --- Additional treatment steps --- p.37 / Chapter 2.3.1 --- Annealing --- p.37 / Chapter 2.3.2 --- Multiple reflow --- p.39 / Chapter 2.3.3 --- Thermal-cycling --- p.39 / Chapter 2.4 --- Characterization --- p.40 / Chapter 2.4.1 --- The cross-section analysis --- p.40 / Chapter 2.4.1.1 --- Samplereparation --- p.40 / Chapter 2.4.1.2 --- Scanning Electron Microscope (SEM) --- p.41 / Chapter 2.4.1.3 --- Scanning Auger Microscope (SAM) analysis --- p.44 / Chapter 2.4.1.3.1 --- The experimental conditions --- p.48 / Chapter 2.4.1.3.2 --- Auger mapping analysis --- p.49 / Chapter 2.4.1.3.3 --- Line scanning analysis --- p.49 / Chapter 2.4.2 --- The reliability test for solder bumps --- p.50 / Chapter 2.4.2.1 --- Measurement of the solder bump's strength --- p.50 / Chapter 2.4.2.2 --- The ball shear test requirements --- p.52 / Chapter Chapter 3 --- The Metallurgy and Stability of the Sn/Cu Interface for Lead-Free Flip-Chip Application / Chapter 3.1 --- Introduction --- p.56 / Chapter 3.2 --- Theroblems of Sn/Cu intermetallic --- p.57 / Chapter 3.3 --- The annealing method and multiple reflow --- p.59 / Chapter 3.3.1 --- The annealing solving approach --- p.59 / Chapter 3.3.2 --- The basic theory of annealing --- p.60 / Chapter 3.3.3 --- Multiple Reflow --- p.63 / Chapter 3.4 --- Results and discussion --- p.63 / Chapter 3.4.1 --- The sample description --- p.63 / Chapter 3.4.2 --- The identification of the components in the structure --- p.64 / Chapter 3.4.3 --- The Sn/Cu intermetallic growth in multiple reflow and the effect of annealing method --- p.68 / Chapter 3.4.3.1 --- The Sn/Cu intermetallic growth for the sample without annealing --- p.68 / Chapter 3.4.3.2 --- The Sn/Cu intermetallic growth for the sample with annealing --- p.71 / Chapter 3.4.3.3 --- Comparison of the Sn/Cu intermetallic growth of the samples with or without annealing --- p.78 / Chapter 3.4.4 --- Interface strength measurement --- p.78 / Chapter 3.4.4.1 --- The ball shear test for the samples after multiple reflow --- p.78 / Chapter 3.4.4.2 --- The ball shear test for the samples after thermal-cycling --- p.82 / Chapter 3.5 --- Conclusion --- p.83 / Chapter Chapter 4 --- Comparison of the metallurgy and Stability of Sn/Ni Intermetallic to Sn/Cu Intermetallic in Flip-Chip Application / Chapter 4.1 --- Introduction --- p.86 / Chapter 4.2 --- The stableroperties of tin-nickel intermetallic --- p.87 / Chapter 4.3 --- Results and Discussion --- p.88 / Chapter 4.3.1 --- Sample Description --- p.88 / Chapter 4.3.2 --- The identification of the components in the structure --- p.88 / Chapter 4.3.3 --- The intermetallic growth of Sn/Ni bumps in multiple reflow --- p.92 / Chapter 4.3.3.1 --- The Sn/Ni intermetallic growth for the sample without annealing --- p.92 / Chapter 4.3.3.2 --- The Sn/Ni intermetallic growth for the sample with annealing --- p.96 / Chapter 4.3.4 --- The comparison tin-nickel intermetallic growth to tin-copper intermetallic --- p.96 / Chapter 4.4 --- Interface strength Measurement --- p.100 / Chapter 4.5 --- Conclusion --- p.102 / Chapter Chapter 5 --- The Formation and Growth of SnNiCu Intermetallic Compound and its Metallurgy and Stability in Flip-Chip Application / Chapter 5.1 --- Introduction --- p.105 / Chapter 5.2 --- The formation of tin-nickel-copper intermetallic --- p.106 / Chapter 5.3 --- Results and Discussion --- p.108 / Chapter 5.3.1 --- Sample Description --- p.108 / Chapter 5.3.2 --- The identification of the components in the structure --- p.108 / Chapter 5.3.2.1 --- For the SnAgCu/Cu interface --- p.108 / Chapter 5.3.2.2 --- For the SnAgCu/Ni interface --- p.110 / Chapter 5.3.3 --- The intermetallic growth of SnAgCu/Cu and SnAgCu/Ni bumps in multiple reflow --- p.115 / Chapter 5.3.3.1 --- The intermetallic growth measurements for SnAgCu/Cu samples --- p.115 / Chapter 5.3.3.2 --- The intermetallic growth measurements for SnAgCu/Ni samples --- p.122 / Chapter 5.3.4 --- The Auger line scanning analysis for both tin-copper and tin-nickel-copper intermetallic --- p.129 / Chapter 5.4 --- Interface strength Measurement --- p.131 / Chapter 5.5 --- Conclusion --- p.139 / Chapter Chapter 6 --- Conclusion / Chapter 6.1 --- Conclusion --- p.140 / References --- p.143

Report (M.S.)--Virginia Polytechnic Institute and State University, 1994. / Abstract. Also available via the Internet.

No description available.

Approved for public release; distribution is unlimited / The ability of the Department of Defense to execute its mission is directly dependent on the capability to produce and maintain weapon systems. Rapid advances in technology have been instrumental to the development of highly efficient and capable systems. However, they have also increased the rate electronic part manufacturers change product lines resulting in the Department of Defense's increasing dependence on obsolete electronic components. The objective of this thesis is to provide a viable tool for managers to eliminate, mitigate, and proactively manage the growing obsolescence problem. The thesis will define obsolescence, provide a comprehensive discussion of ongoing obsolescence initiatives, and provide a systematic approach to manage microelectronic obsolescence. The thesis will also explore and provide recommendations to address the increasingly common scenario where an ongoing weapon system production program receives little or no notification of a part going out of production. / DB-IV, United States Army

Thesis (Ph. D.)--University of Texas at Austin, 2003. / Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (M.A.Sc.) - Simon Fraser University, 2007. / Theses (School of Engineering Science) / Simon Fraser University. Senior supervisor: Dr. Bonnie Gray -- School of Engineering Science. Also issued in digital format and available on the World Wide Web.

Thesis (M.A.)--Carleton University, 1992. / Includes bibliographical references (leaves 208-214).

No description available.

Thesis (M.S.)--Rochester Institute of Technology, 1994. / Typescript. Includes bibliographical references (leaves 95-96).

Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1994. / Vita. Abstract. Includes bibliographical references (leaves 57-58). Also available via the Internet.