Thesis. 1976. Sc.D.--Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. / Microfiche copy available in Archives and Engineering. / Vita. / Includes bibliographical references. / Sc.D.

The topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analogto-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the performance of previously demonstrated chirped pulse laser sources. Moreover, the focus is shifted to a specific application of the linearly chirped pulses, timestretched photonic analog-to-digital conversion (TS ADC). The challenges of surpassing the speeds of current electronic converters are discussed, while the need for low noise linearly chirped pulse lasers becomes apparent for the realization of TS ADC. The experimental research addresses the topic of low noise chirped pulse generation in three distinct ways. First, a chirped pulse (Theta) laser with an intra-cavity Fabry-Pérot etalon and a long-term referencing mechanism is developed that results in the reduction of the pulse-topulse energy noise. Noise suppression of > 15 times is demonstrated. Moreover, an optical frequency comb with spacing equal to the repetition rate (≈100 MHz) is generated using the etalon, resulting in the first reported demonstration of a system operating in the sub-GHz regime based on semiconductor gain. The path for the development of the Theta laser was laid by the precise characterization of the etalon used in this laser cavity design. A narrow linewidth laser is used in conjunction with an acousto-optic modulator externally swept for measuring the etalon's iv free spectral range with a sub-Hz precision, or 10 parts per billion. Furthermore, the measurement of the etalon long-term drift and birefringence lead to the development of a modified intra-cavity Hänsch-Couillaud locking mechanism for the Theta laser. Moreover, an external feed-forward system was demonstrated that aimed at increasing the temporal/spectral uniformity of the optical pulses. A complete characterization of the system is demonstrated. On a different series of experiments, the pulses emitted by an ultra-low noise but high repetition rate mode-locked laser were demultiplexed resulting in a low repetition rate pulse train. Experimental investigation of the noise properties of the laser proved that they are preserved during the demultiplexing process. The noise of the electrical gate used in this experiment is also investigated which led into the development of a more profound understanding of the electrical noise of periodical pulses and a mechanism of measuring their noise. The appendices in this dissertation provide additional material used for the realization of the main research focus of the dissertation. Measurements of the group delay of the etalon used in the Theta laser are presented in order to demonstrate the limiting factors for the development of this cavity design. The description of a balancing routine is presented, that was used for expanding the dynamic range of intra-cavity active variable delay. At last, the appendix presents the calculations regarding the contribution of various parameters in the limitations of analog-todigital conversion.

Recently optical frequency combs and low noise RF tones are drawing increased attention due to applications in spectroscopy, metrology, arbitrary waveform generation, optical signal processing etc. This thesis focuses on the generation of low noise RF tones and stabilized optical frequency combs. The optical frequency combs are generated by a semiconductor based external cavity mode-locked laser with a high finesse intracavity etalon. In order to get the lowest noise and broadest bandwidth from the mode-locked laser, it is critical to know the free spectral range (FSR) of the etalon precisely. First the etalon FSR is measured by using the modified Pound-Drever-Hall (PDH) based method and obtained a resolution of 1 part in 106 , which is 2 order of magnitude better than the standard PDH based method. After optimizing the cavity length, RF driving frequency and PDH cavity locking point, the mode-locked laser had an integrated timing jitter of 3 fs (1 Hz- 100 MHz) which is, to the best of our knowledge, the lowest jitter ever reported from a semiconductor based multigigahertz comb source. The modelocked laser produces ~ 100 comb lines with 10 GHz spacing, a linewidth of ~500 Hz and 75 dB optical signal-to-noise ratio. The same system can also be driven as a regeneratively modelocked laser with greatly improved noise performance. Another way of generating a low noise RF tone is using an opto-electronic oscillator which uses an optical cavity as a high Q element. Due to the harmonic nature of OEOs, a mode selection element is necessary. Standard OEOs use an RF filter having drawbacks such as broad pass band, high loss, and high thermal noise. In our work, a novel optoelectronic scheme which uses an optical filter (Fabry-Perot etalon) as the mode filter instead of an RF filter is demonstrated. This method has the advantage of having ultra-narrow filtering bandwidths ( ~ 10 iv kHz for a 10 GHz FSR and 106 finesse) and an extremely low noise RF signal. Experimental demonstration of the proposed method resulted in a 5-10 dB decrease of the OEO noise compared to the conventional OEO setup. Also, by modifying the etalon-based OEO, and using single side band modulation, an optically tunable optoelectronic oscillator is achieved with 10-20 dB lower noise than dual side band modulation. Noise properties of the OEO as a function of optical frequency detuning is also analyzed theoretically and the results are in agreement with experimental results. The thesis concludes with comments on future work and directions.

No description available.

No description available.

In this thesis, novel regimes of mode locking in quantum dot semiconductor laser diodes have been investigated by exploiting the unique features offered by quantum dots. Using an unconventional approach, the role of excited state transitions in the quantum dots was exploited as an additional degree of freedom for the mode locking of experimental quantum dot lasers. For the first time, passive mode locking via ground (1260nm) or excited state (1190nm) was demonstrated in a quantum dot laser. Picosecond pulses were generated at a repetition rate of 21GHz and 20.5GHz, for the ground and excited states respectively, with average powers in excess of 25mW. Switching between these two states in the mode-locking regime was achieved by changing the electrical biasing conditions, thus providing full control of the operating spectral band. A novel regime for mode locking in a quantum-dot laser was also investigated, where the simultaneous presence of cw emission in the excited-state band at high injection current levels, dramatically reduced the duration of the pulses generated via the ground state, whilst simultaneously boosting its peak power. This represents a radically different trend from the one typically observed in mode-locked lasers. From this investigation, it was concluded that the role of the excited state can not be neglected in the generation of ultrashort pulses from quantum-dot lasers. Stable passive mode locking of a quantum-dot laser over an extended temperature range (from 20ºC to 80ºC) was also demonstrated at relatively high output average powers. It was observed that the pulse duration and the spectral width decreased significantly as the temperature was increased up to 70ºC. The process of carrier escape in the absorber was identified as the main contributing factor that led to a decrease in the absorber recovery time as a function of increasing temperature which facilitated a decrease in the pulse durations. These results are shown to open the way for the ultimate deployment of ultra stable and uncooled mode-locked semiconductor diode lasers.

The concern of this dissertation is the understanding and improvement of a class of lasers that is responsible for some of the shortest optical pulses available today. In particular, we seek ways to produce from synchronously pumped mode-locked dye laser systems, shorter pulses of higher intensity with improved pulse-to-pulse consistency. Specific topics.that are discussed herein include the study of the role of the pump pulse in synchronously pumped mode-locked lasers, the study of the pulse shaping and shortening due to an intracavity saturable absorber, and the study of a fundamental pulse train instability associated with these lasers.

A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.

Yb-ion doped gain media have become the material of choice for reliable generation of ultrashort pulses at wavelength around 1 μm. At present, however, operation at high average power (>1 W) with sub-100 fs pulses still remains challenging. The efforts of developing an Yb-ion oscillator towards this goal, therefore, are the main focus of this thesis. In this work, the Yb:KGd(WO4)2 (Yb:KGW) crystals were chosen to serve as the gain media. To achieve high power operation, two fundamental issues have been carefully considered: 1) a new pumping scheme was proposed to alleviate the thermal issues in the Yb:KGW crystals; 2) a new method was introduced to characterize intracavity losses in the broadband Yb-ion oscillators. As a side effect observed during the optimization of the CW operation, simultaneous two-wavelength emission was also discussed. With the knowledge and experimental understanding of the fundamental issues in laser oscillators operated in the continuous-wave regime, the next step of this work demonstrated their operation in a pulsed regime. The dual action of the Kerr-lens and saturable absorber (KLAS) mode locking was proposed in this work and resulted in greatly enhanced laser performance. The laser delivered pulses with 67 fs duration at a repetition rate of 77 MHz. The average output power reached 3 W, which, to the best of our knowledge, is the highest average output power produced to date from the Yb-ion based bulk lasers with such a short pulse duration. The scalability of pulse energy and peak power was also demonstrated by reducing the repetition rate to either 36 MHz or 18 MHz. The cavity with the latter repetition rate produced 85 fs pulses with the pulse energy up to 83 nJ, which corresponds to a peak power as high as 1 MW. As required by many biomedical applications, the wavelength of the generated pulses (~1 μm) can be tuned in the near-infrared region by coupling them into an optical parametric oscillator (OPO). The feasibility of this approach was demonstrated in the last part of this thesis, through a thorough theoretical analysis of two OPO materials suitable for excitation at 1.04 μm.

Thesis (M.App.Sc.) - Carleton University, 2007. / Includes bibliographical references (p. 86-94). Also available in electronic format on the Internet.