The electronic structure and reaction dynamics of molecular and cluster anions in the gas phase has been investigated using negative ion velocity-map imaging photoelectron spectrometer. Photoelectron images provide important information about both energies and symmetries of the parent anion orbitals from which photoelectron originates. The symmetry and the ordering of several low-lying electronic states of neutral nitromethane (X¹A′, a³A″, b³A″, and A¹A″) are assigned based on a group theoretical analysis of the transitions angular distributions and the results of DFT calculations. The through-bond electronic coherence in meta- and para-dinitrobenzene anions is explored by recording a series of photoelectron images in 532-266 nm wavelength range. Photoelectron angular distributions for both isomers exhibit oscillatory behavior characteristic of the quantum interference effect, suggesting that dinitrobenzene anions retain their high symmetry electronic structures in the gas phase. Photoelectron imaging experiments on [O(N₂O)(n)]⁻, n =0–9 at 266 and 355 nm provide clear evidence of a switch from the cova)lent NNO₂⁻ cluster core to the atomic O⁻ core occurring between n = 3 and 4. The experimental results and theoretical modeling indicate that despite the greater stability of NNO₂⁻ relative to the O⁻ + N₂O⁻ dissociation limit, an O⁻ cluster core becomes energetically favored over NNO₂⁻ for n > 3, due to the more efficient solvation of the atomic anion. The photodissociation dynamics of I₂⁻ and IBr⁻ anions on the respective A' excited-state anion potentials is effectively unraveled in 780 nm pump - 390 nm probe time-resolve experiments. The time-dependent photoelectron spectra and classical trajectory calculations of the IBr⁻ dissociation provide the first rigorous dynamical test of the recently calculated A′ potential for this system. The photoelectron anisotropy cyclic variation observed in photodissociation of I₂⁻ is interpreted in the context of dual-center quantum interference model. The 390 nm pump – 390 nm probe experimental data reveal fast (≤100 fs) and delayed (~ 700 fs) appearance of the I⁻ channel in the photodissociation of I₂Cl⁻ and BrICl⁻ anions respectively. The difference in the reaction time-scales is attributed to the distinct dissociation pathways available for the anions to form I⁻ product.

Electron affinity is one of the most important parameters that guide chemical reactivity. Halogens have the highest electron affinities among all elements. A class of molecules called superhalogens has electron affinities even greater than that of Cl, the element with the largest electron affinity (3.62 eV). Traditionally, these are metal-halogen complexes which need one electron to close their electronic shell. Superhalogens have been known to chemistry for the past 30 years and all superhalogens investigated in this period are either based on the 8-electron rule or the 18-electron rule. In this work, we have studied two classes of unconventional superhalogens: borane-based superhalogens designed using the Wade-Mingo’s rule that describes the stability of closo-boranes, and pseudohalogen based superhalogens. In addition, we have shown that superhalogens can be utilized to build hyperhalogens, which have electron affinities exceeding that of the constituent superhalogens, and also to stabilize unusually high oxidation states of metals.

We present results on the ionospheric structure around Titan observed during numerous deep (<1000 km) flybys by the Cassini spacecraft. Our results are based on measurements by the radio and plasma wave science instrument, in particular the Langmuir probe. In addition, data from the magnetometer and electron spectrometer have contributed. The ionosphere of Titan is created when the atmosphere of the moon becomes ionised. There are several mechanisms that contribute to this, the most important of which are considered to be photoionisation by EUV from the Sun with associated photoelectron ionisation, and particle impact ionisation by electrons and ions from Saturn’s corotating magnetosphere. We investigate the influence of the solar zenith angle on the electron number density at the ionospheric peak. The results show on average four times more plasma on the dayside compared to the nightside, with typical densities of 2500 – 3500 cm-3 and 400 – 1000 cm-3, respectively. In a complementary study, we make a case study of a nightside flyby and show that the altitude structure of the deep ionosphere is reproducible by a simple electron impact ionisation model. Taken together, this leads to the conclusion that solar photons are the main ionisation source of the dayside ionosphere. However, magnetospheric particle precipitation also contributes and can explain the electron densities seen on the nightside. As Titan does not exhibit any large intrinsic magnetic field, the fact that it is embedded in the magnetosphere of Saturn means that the Kronian field drapes around the moon and gives rise to an induced magnetosphere. We show that there are currents of the order of 10 – 100 nA m-2 flowing in the ionosphere of the moon. Associated with the currents are perpendicular electric fields ranging from 0.5 to 3 µV m-1. Finally, we investigate measurements obtained during T70, the deepest Titan flyby performed to date. We show that there is a substantial amount of negative ions present below an altitude of 900 km. This confirms previous result by the electron spectrometer, showing negative ions at higher altitudes in Titan’s ionosphere.

A espectroscopia de ressonância ciclotrônica de íons foi usada para estudar reações de íons alcóxido, hidróxido, fluoreto, íon-radical óxido, acetileto e amideto com formiatos de alquila; o último íon reage também com N,N-dimetilformamida. Em todos os casos ocorre uma reação de descarbonilação, dando origem a um íon solvatado, que as evidências experimentais indicam ser unido por ponte de hidrogênio. Deslocamentos nucleófilos de grupos ligados ao esqueleto formílico podem ocorrer em casos adequados e em casos especiais ocorre ainda a formação de íons formiato. Os íons solvatados formados a partir de íons fluoreto e alcóxido com formiatos de alquila reagem com álcoois, podendo-se desta meneira estabelecer uma ordem de capacidade de solvatação para os álcoois alifáticos simples. A ordem estabelecida foi: CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. Foram determinadas constantes relativas de velocidade para as reações de vários íons negativos com formiatos de alquila, em sistemas onde se forma mais de um produto. Nos casos mais favoráveis (reações de íons fluoreto) foram calculadas constantes de velocidade absolutas para os vários canais de reação. / Ion-cyclotron resonance spectroscopy has been used to study the reactions between alkoxide, hydroxide, fluoride, O-, acetylide and amide ions with alkyl formates; the last ion reacts also with N,N-dimethylformamide. In all systems a decarbonylation occurs, giving rise to a solvated product ion, held by a hydrogen bond, as evidenced experimentally. Nucleophilic displacement of the formyl group substituents may occur in favorable cases and in a few particular systems the formation of formate ion is observed. The solvated ions formed through the reaction of fluoride or alkoxide ions with alkyl formates can react further with alcohols to establish the intrinsic clustering ability of simple aliphatic alcohols. The order of solvating ability is shown to follow the order CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. In systems where parallel reactions occur, relative rate constants were determined; in the most favorable cases (reactions of fluoride ions), absolute rate constants for the various reaction channels were calculated.

A espectroscopia de ressonância ciclotrônica de íons foi usada para estudar reações de íons alcóxido, hidróxido, fluoreto, íon-radical óxido, acetileto e amideto com formiatos de alquila; o último íon reage também com N,N-dimetilformamida. Em todos os casos ocorre uma reação de descarbonilação, dando origem a um íon solvatado, que as evidências experimentais indicam ser unido por ponte de hidrogênio. Deslocamentos nucleófilos de grupos ligados ao esqueleto formílico podem ocorrer em casos adequados e em casos especiais ocorre ainda a formação de íons formiato. Os íons solvatados formados a partir de íons fluoreto e alcóxido com formiatos de alquila reagem com álcoois, podendo-se desta meneira estabelecer uma ordem de capacidade de solvatação para os álcoois alifáticos simples. A ordem estabelecida foi: CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. Foram determinadas constantes relativas de velocidade para as reações de vários íons negativos com formiatos de alquila, em sistemas onde se forma mais de um produto. Nos casos mais favoráveis (reações de íons fluoreto) foram calculadas constantes de velocidade absolutas para os vários canais de reação. / Ion-cyclotron resonance spectroscopy has been used to study the reactions between alkoxide, hydroxide, fluoride, O-, acetylide and amide ions with alkyl formates; the last ion reacts also with N,N-dimethylformamide. In all systems a decarbonylation occurs, giving rise to a solvated product ion, held by a hydrogen bond, as evidenced experimentally. Nucleophilic displacement of the formyl group substituents may occur in favorable cases and in a few particular systems the formation of formate ion is observed. The solvated ions formed through the reaction of fluoride or alkoxide ions with alkyl formates can react further with alcohols to establish the intrinsic clustering ability of simple aliphatic alcohols. The order of solvating ability is shown to follow the order CH3OH < C2H5OH < iso-C3H7OH < tert-C4H9OH. In systems where parallel reactions occur, relative rate constants were determined; in the most favorable cases (reactions of fluoride ions), absolute rate constants for the various reaction channels were calculated.

Cette thèse porte sur l’étude de la production de surface des ions négatifs (IN) pour des applications dans la fusion thermonucléaire. Ce travail a été réalisé à l'aide d'une source plasma PHISIS. Les IN formés en surface de l'échantillon sont collectés et analysés avec un spectromètre de masse (SM). La fonction de la distribution en énergie des ions négatifs FDEIN est mesurée. Dans cette thèse, une technique de polarisation DC pulsée est introduite pour permettre l'étude de la production d'IN en surface sur des échantillons isolants comme le diamant. Un modèle qui calcule le taux de changement de la variation de la tension sur une surface isolante polarisée en mode pulsé est développé. De façon surprenante, la production d’IN en surface sur un diamant dopé au bore ou non dopé est beaucoup plus élevée en mode pulsé qu'en mode continu. Il est traité également la production d’IN en surface dans les conditions de faible tension de polarisation. Le meilleur rendement d’IN mesuré à faible polarisation est obtenu avec du diamant dopé au bore (BDD) et il est 2 fois plus élevé que celui mesuré sur HOPG (high oriented pyrolitic graphite). L'analyse de la production d’IN en surface à différents polarisations pour différents matériaux a été effectuée afin de corréler l'évolution du rendement d’IN aux changements d'état de surface. Une étude approfondie de la production en surface d'IN a été réalisée sur la surface de Nanoporous 12 CaO. 7Al2O3 electride surface. L'influence des conditions expérimentalles sur le rendement en IN a été étudiée. Dans cette contribution, nous montrons que ce matériau pourrait potentiellement être utilisé dans les sources d'ions négatifs sans césium / This thesis deals with negative ions (NI) surface production for applications in thermonuclear fusion. This work was conducted using a plasma source PHISIS. NI formed on a negatively biased sample surfaceare collected and analyzed with energy mass spectrometer (MS). Negative ion distribution function NIEDF is measured. A SIMION calculation was done to have a complete idea about MS transmission effect on the NIEDF. In the course of this thesis, a DC pulsed bias technique is introduced to enable the study of negative ion surface production on insulating samples as non-doped diamond layers. A model that calculate the rate of change of bias on insulator surface biased in pulsed mode is developed. Surprisingly, negative-ion surface production on boron-doped or non-doped diamond is much higher in pulsed mode than in continuous mode. This thesis deals also with negative ion surface production in low bias condition. The best NI yield measured at low bias is obtained with Boron doped diamond (BDD) ant it is 2 times higher than the one measured on HOPG (highly oriented pyrolytic graphite) surface. Analysis of NI surface production at different surface bias for different material were performed in order to correlate the NI yield evolution to the surface state changes.An extensive study of NI surface production was performed on Nanoporous 12CaO.7Al2O3 electride surface. The influence of surface temperature, bias and plasma exposure time on negative-ion yield was investigated. In this contribution, we show that the electride material has potentials to be used as a production surface in negative ion sources devoted to nuclear fusion application

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

L'objectif de cette thèse était trouver des solutions pour produire de hauts rendements d’ions négatifs (IN) H–/D– sur des surfaces dans des plasmas de H2/D2 sans Cs pour des applications en fusion thermonucléaire. La modélisation des fonctions de distribution en énergie des ions négatifs (FDEIN) a montré un accord remarquable avec l'expérience pour les matériaux carbonés. Une méthode de reconstruction mis au point dans le cadre de cette thèse a permis de déterminer les distributions en énergie et en angle des IN émis de la surface. La méthode de reconstruction peut être appliquée à tout type de surface et/ou d’IN. Une étude de la production des IN en surface a été réalisée sur une grande variété de matériaux (des différents types de graphite, couches de diamant et métaux). L'influence sur le rendement des IN de la température de surface, de la tension de polarisation et du temps d'exposition au plasma a été étudiée. Une méthode de polarisation pulsée a été développée pour permettre l'étude de production des IN sur les surfaces de matériaux isolants tels que le diamant microcristallin non dopé. L'utilisation de diagnostics de surface ex situ tels que la désorption programmée en température (DPT) et la spectroscopie Raman ont permis de caractériser l'état de surface des matériaux carbonés. L’ensemble des études a permis de montrer que pour optimiser le rendement des IN sur le diamant, il faut travailler avec une surface moins dégradée. Celle ci peut être obtenu en augmentant la température de surface jusqu’à 400°C – 500°C ce qui permet de restaurer les propriétés intrinsèques des diamants ou en appliquant une polarisation pulsée. / The objective of this thesis was to find solutions to produce high yields of H–/D– negative ions (NI) on surfaces in Cs-free H2/D2 plasmas for thermonuclear fusion applications. Modeling of the negative-ion energy distribution functions (NIEDF) has shown remarkable agreement with experiment for carbon materials. The reconstruction method developed in the course of this thesis has allowed to determine the distribution in energy and angle of NI emitted from the surface. The reconstruction method can be applied to any type of surface and/or NI. A study was performed on a large variety of materials: different types of graphite, diamond films and metals. The influence of surface temperature, bias and plasma exposure time on NI yield was investigated. The method of pulsed bias was developed to enable the study of NI production on surfaces of insulating materials such as microcrystalline non-doped diamond (MCD). The use of ex situ surface diagnostics such as temperature programmed desorption (TPD) and Raman spectroscopy has allowed to characterize the surface state of carbon materials. Basing on the performed studies, we demonstrated that to optimize the NI yield on diamond one has to work with a less degraded surface. This can be obtained rising the surface temperature to 400°C–500°C which allows restoring intrinsic properties of diamond. The less degraded surface state can also be obtained by applying the pulsed bias which gives the possibility to increase the H2/D2 surface coverage and diminish the defects induced by plasma exposure.

One of the main priorities of our society is to constantly increase the quality of life. Part of the new trends and technology is to optimize all factors affecting each individual in buildings at home, and in the work environment. Modern technology increasingly find inspiration in traditional materials and principles of architectural design. We can greatly affect the microclimate of buildings by suitable selection of material surfaces, ventilation systems and selection of structures that can affect the natural electromagnetic field of the Earth during the architectural design of buildings. And particular choice of the place where the building is located. In this thesis I focus on Ionic microclimate, which may be an indicator of a healthy environment and has a major impact on humans health and psychological well-being. I would like to contribute to the healthy and harmonious living and designing buildings in consideraion of sustainable development by my thesis.