[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.

[Formulae and special characters can not be reproduced here. Please see the pdf version of the Abstract for an accurate reproduction.] Indium nitride is an important III-V nitride semiconductor with many potential applications such as in high frequency transistors, laser diodes and photo voltaic cells. The mobility and peak drift velocity of this material are predicted to be extremely high and superior to that of gallium nitride. However, many material properties such as the origin of the n-type conductivity and the electronic band gap are not well understood. Moreover, there is limited information on the stoichiometry and the level of impurity contaminations in the films from different growth techniques. The n-type conductivity observed for as-grown indium nitride films has long been attributed to nitrogen vacancies, implying that the material is nitrogen deficient. A band gap value around 2 eV, as measured by the optical absorption method, is suggested by some authors to be a result of the formation of an InNIn2O3 alloy. Alternatively, the observation of a lower absorption edge, suggesting a band gap around 0.7 eV, may be caused by Mie scattering at indium clusters that may form during film growth. Secondary ion mass spectroscopy and x-ray techniques provide only qualitative composition information. The quantitative interpretation of the results relies on calibration samples which are not available for indium nitride. In Rutherford backscattering spectroscopy, while quantitative, the carbon, nitrogen and oxygen signals cannot be separated unless the film is very thin ([tilde]150 nm). However, with heavy ion Elastic Recoil Detection (ERD) analysis all the elements in indium nitride films can be fully separated even for a film thickness of [tilde] 800 nm. In this work, indium nitride films from different growth techniques have been analysed with ERD using 200 MeV 197Au projectiles. The observed nitrogen depletion during the ERD analysis was monitored as a function of projectile fluence using a gas ionisation detector with a large solid angle. Different models have been tested and it has been shown that the bulk molecular recombination model accurately describes the nitrogen depletion so that the original nitrogen-to- indium ratio can be measured with an accuracy of [plus or minus]3 [percent]. The correlation of nitrogen depletion rate and stopping power of the projectile ion has been investigated. The study has shown that the rate of depletion is slower for low-Z projectiles. It has been shown that for a film with good structural properties, no loss of nitrogen occurs during the ERD analysis with low-Z projectiles such as 42 MeV 32S. Thus, the original nitrogen-to-indium ratio can be obtained without any theoretical modelling, and with a precision of better than [plus or minus]1 [percent]. All the indium nitride films studied in this work, for which X-ray diffraction shows no metallic indium, are nitrogen-rich which is contradictory to expectation. Therefore, the common assertion that nitrogen vacancies are the cause of n-type conductivity in as-grown films is diffcult to explain. Instead, the existence of In vacancies, N antisites and interstitial N2 may be speculated. The carbon and oxygen contamination is an issue for films grown by all common growth techniques. However, the suggested correlation of oxygen content in the film with the apparent band gap is not supported by the ERD results. Instead, a correlation between nitrogen-to-indium ratio and the measured band gap has been observed for films grown by RF-sputtering. This work reports the implantation of radioisotope probes using negative ions. The 111In/Cd probe was selected for this work as it is a common Perturbed Angular Correlation (PAC) probe and ideally suited for the study of indium nitride. For the synthesis of the probe 111In/Cd, several possibilities, such as the production of 111In/Cd via nuclear fusion evaporation reactions and from commercially available 111InCl3 solutions, were explored. Different materials, including powders of Al2O3 and In2O3, were investigated as a carrier for the probe in the ion source of the radioisotope implanter. It has been established that combining the 111InCl3 solution as the source and In2O3 powder as the carrier material gives optimum implantation efficiency. The radioisotope implanter facility has been developed to a stage that the radioisotope probe 111In/Cd can be routinely implanted into materials as molecular 111InO?? ions. An implantation rate of 3x10 4[th] Becquerel per hour has been demonstrated. Measurements on different materials (Ag, In, Ni, Si, InP) have shown that condensed matter spectroscopies such as Low Temperature Nuclear Orientation, Nuclear Magnetic Resonance on Oriented Nuclei (NMRON) and Perturbed Angular Correlation can be reliably performed. NMRON measurements on silver indicate a new resonance frequency of 75.08 MHz for 111InAg at 8.0 T. The local lattice environment of indium nitride thin films has been investigated with PAC spectroscopy. Several methods of introducing a radioisotope probe into a host material have been investigated for indium nitride. The thermal diffusion of the radioisotope probe 111In/Cd into indium nitride at a temperature below the dissociation temperature (about 550 [degrees] C) was not possible. The probe was, however, successfully introduced into indium nitride films with ion implantation techniques. Recoil implantation at MeV energies following fusion evaporation reactions and ion implantation at keV energies, both have been investigated for indium nitride films. An interaction frequency of v = 28 MHz has been measured for the 111In/Cd probe in indium nitride. This result is consistent with that obtained for indium nitride bulk grains. The PAC results suggest that all types of indium nitride films have a highly disordered lattice which could only be partially improved by annealing. Furnace annealing in nitrogen atmosphere above 400 [degrees] C resulted in the dissociation of the film. However, such dissociation could be avoided with rapid thermal annealing up to 600 [degrees] C. More detailed defect studies with PAC require the availability of better material. This study has also shown that indium nitride is highly sensitive to ion beam irradiation. Severe depletion of nitrogen during exposure to ions with MeV and KeV energies is an issue for the ion beam characterisation and processing of indium nitride.