Lai Chun Hei Gary = 錳氧化物-鈮摻雜之鈦酸鍶異構結的輸運特性 / 黎鎮禧. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2005. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / Lai Chun Hei Gary = Meng yang hua wu-ni shan za zhi tai suan si yi gou jie de shu yun te xing / Li Zhenxi. / Acknowledgement --- p.i / Abstract --- p.ii / 論文摘要 --- p.iv / Table of contents --- p.vi / List of Figures --- p.x / List of Tables --- p.xv / Chapter Chapter 1 --- Introduction / Chapter 1.1 --- Introduction to perovskite manganites and niobium doped strontium titanate --- p.1-1 / Chapter 1.1.1 --- Structure and properties of perovskite manganites --- p.1-1 / Chapter 1.1.2 --- Structure and properties of niobium doped strontium titanate --- p.1-4 / Chapter 1.1.3 --- Phase transition in perovskite manganites --- p.1-9 / Chapter 1.1.4 --- Charge ordering and small polaron theory in PCMO --- p.1-15 / Chapter 1.1.5 --- Colossal Magnetoresistance (CMR) in perovskite manganites --- p.1-19 / Chapter 1.16 --- Review of semiconducting junction between perovskite manganites and niobium doped strontium titanate --- p.1-23 / Chapter 1.2 --- Research motivation --- p.1-28 / Chapter 1.3 --- Scope of this thesis --- p.1-29 / References --- p.1-31 / Chapter Chapter 2 --- Experimental details / Chapter 2.1 --- Thin film deposition --- p.2-1 / Chapter 2.1.1 --- Facing-target sputtering --- p.2-1 / Chapter 2.1.2 --- Vacuum system --- p.2-3 / Chapter 2.1.3 --- Fabrication and characterization of manganites targets --- p.2-4 / Chapter 2.1.4 --- Substrate --- p.2-7 / Chapter 2.1.5 --- Deposition procedure --- p.2-8 / Chapter 2.1.6 --- Silver electrode coating apparatus --- p.2-10 / Chapter 2.2 --- Annealing systems --- p.2-12 / Chapter 2.2.1 --- Vacuum annealing system --- p.2-12 / Chapter 2.2.2 --- Oxygen annealing system --- p.2-14 / Chapter 2.3 --- Characterization --- p.2-16 / Chapter 2.3.1 --- Profilometer --- p.2-16 / Chapter 2.3.2 --- X-ray diffractometer --- p.2-16 / Chapter 2.3.3 --- Resistance measurement system --- p.2-18 / Chapter 2.3.4 --- Current-voltage characteristics measurement system --- p.2-20 / References --- p.2-23 / Chapter Chapter 3 --- Epitaxial LCMO/STON heterojunction / Chapter 3.1 --- Four point and two point I-V measurement --- p.3-1 / Chapter 3.2 --- Magnetic phase transition of LCMO revealed by four point I-V measurement of LCMO/STON heteroj unction --- p.3-8 / Chapter 3.3 --- Oxygen annealing effect on LCMO/STON heteroj unction --- p.3-14 / Chapter 3.4 --- Positive colossal Magnetoresistance in LCMO/STON heteroj unction --- p.3-16 / References --- p.3-23 / Chapter Chapter 4 --- Epitaxial PCMO/STON heterojunction / Chapter 4.1 --- Ohmic contact for PCMO thin films --- p.4-1 / Chapter 4.2 --- PCMO charge ordering and magnetic phase transition --- p.4-9 / Chapter 4.3 --- Four point I-V measurement of PCMO/STON heterojunction --- p.4-14 / References --- p.4-16 / Chapter Chapter 5 --- Epitaxial LCMO/PCMO/STON junction / Chapter 5.1 --- Tunneling junction fabrication --- p.5-1 / Chapter 5.2 --- Structural characterizations --- p.5-2 / Chapter 5.3 --- PCMO magnetic phase transition revealed by I-V measurement of LCMO/PCMO/STON tunneling junction --- p.5-3 / Chapter 5.4 --- Energy band structure of perovskite manganites --- p.5-11 / Chapter 5.4.1 --- Introduction to energy band of perovskite manganites and STON --- p.5-11 / Chapter 5.4.2 --- Temperature dependent band structure of LCMO explained by diffusion voltage of LCMO/STON heterojunction --- p.5-18 / References --- p.5-22 / Chapter Chapter 6 --- Conclusions / Chapter 6.1 --- Conclusion --- p.6-1 / Chapter 6.2 --- Future outlook --- p.6-3

Thesis (Ph. D.)--University of Oregon, 2004. / On t.p. "m̲" and "n̲" are subscript. Typescript. Includes vita and abstract. Includes bibliographical references (leaves 147-153). Also available for download via the World Wide Web; free to University of Oregon users.

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemistry, 1979. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND SCIENCE. / Vita. / Includes bibliographical references. / Ph.D.

Made available in DSpace on 2014-10-09T12:35:00Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:00:16Z (GMT). No. of bitstreams: 0 / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Made available in DSpace on 2014-10-09T12:35:00Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:00:16Z (GMT). No. of bitstreams: 0 / Camadas de fosfato tricatiônico são largamente utilizadas na indústria automotiva como proteção contra corrosão e adesão de revestimentos orgânicos ao substrato de aço. A combinação do fosfato e revestimento proporciona à superfície metálica, alta durabilidade à corrosão. Porém a camada cristalina obtida com este tipo de fosfato apresenta poros entre os cristais, expondo o substrato metálico ao ambiente corrosivo, tornando importante um tratamento de passivação após fosfatização. O tratamento comercial de fosfatização tricatiônico e subsequente passivação envolvem o uso de elementos tóxicos, tais como níquel e cromo hexavalente, produzindo resíduos que são prejudiciais ao ambiente e seu uso têm sido cada vez mais proibido. O objetivo do presente estudo é investigar o efeito da troca do níquel, no processo de fosfatização, pelo composto de nióbio (oxalato de nióbio e amônio) com relação à resistência à corrosão do aço fosfatizado. Esta investigação foi realizada através de métodos eletroquímicos, utilizando-se principalmente ensaios de polarização potenciodinâmica e técnicas de espectroscopia de impedância eletroquímica (EIE); como também ensaios de névoa salina. Para caracterização superficial das camadas de fosfato foram adotadas, entre outras, as análises por microscopia eletrônica de varredura (MEV), espectroscopia de energia dispersiva (EDS) e difração de raios-X. Foram adotados dois tipos de banho de fosfato tricatiônico. Inicialmente utilizou-se uma composição de banho preparada em laboratório baseada em formulação usada por indústria de eletrodomésticos. Posteriormente foi adotado um banho com composição típica da indústria automotiva, especialmente preparado para estudos sem a presença do níquel. Os resultados dos testes eletroquímicos mostraram que a camada de fosfato obtida em solução contendo nióbio (zinco, manganês e nióbio) produziu melhor proteção contra corrosão do substrato, comparativamente àquela obtida em banho contendo níquel (zinco, manganês e níquel). O ensaio de névoa salina, por outro lado, sugeriu um desempenho similar com relação à corrosão para estes dois tipos de camadas de fosfato. O oxalato de nióbio e amônio parece apresentar um efeito de passivação mesmo quando usado em banhos de fosfatização. Mas como agente de passivação para aço carbono fosfatizado, os resultados apontaram para a necessidade de se realizar novas pesquisas. / Tese (Doutoramento) / IPEN/T / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP

Quantum computing and two dimensional van der Waals materials research have been two of the fastest growing fields of condensed matter physics research for the better part of the last two decades. In that time, advances in superconducting qubit design, materials and fabrication have improved their relaxation and coherence times by about 5 orders of magnitude. One of the key components that quantum devices such as qubits require are ultra low loss capacitance elements. Conventional parallel plate capacitors have been unable to fulfill this need due to bulk and inter-facial losses, necessitating the use of coplanar capacitors with extremely large footprints. In fact one of the driving forces behind increase coherence times has been the ever growing footprint of these coplanar capacitor pads, and the reduced electric field density and thus reduced surface losses that they provide. However, this style of capacitor creates a number of challenges when it comes to scaling the number of qubits in a system. First, the large geometric footprint of these pads limits the number of qubits that can be placed on a chip. Second, the dispersion of the electric field, above and below the plane of the capacitor pads can cause unwanted crosstalk between neighbouring qubits, again limiting the number of qubits that can be put on a chip without compromising coherence. Since the isolation of a single atomic layer of graphene in 2004 and the ability to create heterostructures of a variety of two dimensional materials, the field of van der Waals materials research has exploded at a similar rate. Single crystals of van der Waals materials, can be grown with extremely low defect densities, and then be stacked to create heterostructures with ultra-clean laminated interfaces. This work explores how van der Waals materials may be used to create low loss parallel plate capacitors. The parallel plate geometry confines the electric field between the crystalline materials and low loss interfaces of a van der Waals heterostructure, limiting both losses at the surfaces as well as undesired cross talk between qubits. We begin by studying the microwave losses in hexagonal boron nitride (hBN). Next we report a method to make low loss microwave contacts to air sensitive superconducting van der Waals materials like niobium diselinde (NbSe₂). Finally, we demostrate coherence in a transmon where the primary shunt capacitor is an all van der Waals parallel plate capacitor, achieving a 1000× reduction in geometric footprint, when compared to a conventional coplanar capacitor.