331 |
Construction of the preparation, growth and characterization chamber of molecular beam epitaxy system and some studies of the iron-gallium nitride system with a view to spintronics applicationsHui, I Pui. January 2007 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2007. / Also available in print.
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332 |
Growth of AlInN and zinc blende GaN by molecular beam epitaxyShi, Min, January 2007 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2008. / Also available in print.
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333 |
Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor depositionGao, Yungeng. January 2000 (has links)
Thesis (Ph. D.)--Ohio University, March, 2000. / Title from PDF t.p.
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334 |
Cathodoluminescence and kinetics of gallium nitride doped with thuliumTsou, Shih-En. January 2000 (has links)
Thesis (M.S.)--Ohio University, March, 2000. / Title from PDF t.p.
|
335 |
Optical spectroscopy of wide-band-gap semiconductors raman and photoluminescence of gallium nitride, zinc oxide and their nanostructures /Wang, Dake. Park, Minseo. January 2006 (has links) (PDF)
Dissertation (Ph.D.)--Auburn University, 2006. / Abstract. Includes bibliographic references.
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336 |
Development of fabrication processes for Si and GaN photonic crystal structuresYeldandi, Satish. January 2008 (has links)
Thesis (M.S.)--West Virginia University, 2008. / Title from document title page. Document formatted into pages; contains xi, 99 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 80-83).
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337 |
Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology /Yi, Congwen. January 2008 (has links)
Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2008. / Includes bibliographical references (leaves 76-87). Also available in electronic version.
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338 |
Wide band gap nanomaterials and their applicationsZhang, Shaolin, January 2009 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2009. / Includes bibliographical references (p. 69-71). Also available in print.
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339 |
Understanding the impact of bulk traps on GaN HEMT DC and RF characteristicsKalavagunta, Aditya. January 2009 (has links)
Thesis (Ph. D. in Electrical Engineering)--Vanderbilt University, May 2009. / Title from title screen. Includes bibliographical references.
|
340 |
Aluminum nitride thin films and structures for piezoelectric microelectromechanical systems (PMEMS) applicationsKabulski, Adam. January 2008 (has links)
Thesis (M.S.)--West Virginia University, 2008. / Title from document title page. Document formatted into pages; contains vi, 70 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 67-70).
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