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Herstellung, Charakterisierung und neue Einsatzgebiete von keramischen Nitrid- und Oxinitridpulvern /Pätzold, Carsten. January 2001 (has links) (PDF)
Techn. Universiẗat, Diss--Freiberg (Sachsen), 2001.
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Effect of strain on aluminum nitride/gallium nitride distributed Bragg reflectorsMiller, Christopher Michael, January 1900 (has links)
Thesis (M.S.)--West Virginia University, 2009. / Title from document title page. Document formatted into pages; contains viii, 77 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 66-68).
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SYNTHESIS AND CHARACTERIZATION OF GaN AND ZnGeN2Bekele, Challa Megenassa 04 January 2007 (has links)
No description available.
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Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructuresHuang, Yan, 黃燕 January 2005 (has links)
published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy
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Growth, doping and nanostructures of gallium nitrideCai, Xingmin., 蔡興民. January 2005 (has links)
published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy
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Development of a deep level optical spectroscopy system and its application to the study of defects in electron and neutron irradiatedgallium nitrideLi, Stella., 李加碧. January 2003 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
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MBE growth and characterization of GaN filmZhu, Wenkai, 朱文凱 January 1999 (has links)
published_or_final_version / Industrial and Manufacturing Systems Engineering / Master / Master of Philosophy
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Processing reaction bonded silicon nitride towards full densityPugh, M. D. January 1986 (has links)
No description available.
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Multiscale modeling of nitride fuelsClaisse, Antoine January 2016 (has links)
Nitride fuels have always been considered a good candidate for GENIV reactors, as well as space reactors, due to their high fissile density, highthermal conductivity and high melting point. In these concepts, not beingcompatible with water is not a significant problem. However, in recent years,nitride fuels started to raise an interest for application in thermal reactors,as accident tolerant or high performance fuels. However, oxide fuels havebenefited from decades of intensive research, and thousands of reactor-years.As such, a large effort has to be made on qualifying the fuel and developingtools to help assess their performances.In this thesis, the modeling side of this task is chosen. The effort istwo-fold: determining fundamental properties using atomistic models andputting together all the properties to predict the performances under irradi-ation using a fuel performance code. The first part is done combining manyframeworks. The density functional theory is the basis to compute the elec-tronic structure of the materials, to which a Hubbard correction is added tohandle the strong correlation effects. Negative side effects of the Hubbardcorrection are tackled using the so-called occupation matrix control method.This combined framework is first tested, and then used to find electronic andmechanic properties of the bulk material as well as the thermomechanicalbehavior of foreign atoms. Then, another method, the self-consistent meanfield (SCMF) one, is used to reach the dynamics properties of these foreignatoms. In the SCMF theory, the data that were obtained performing the abinitio simulations are treated to provide diffusion and kinetic flux couplingproperties.In the second step of the work, the fuel performance code TRANSURA-NUS is used to model complete fuel pins. An athermal fission gas releasemodel based on the open porosity is developed and tested on oxide fuels.A model for nitride fuels is introduced, and some correlations are bench-marked. Major issues remaining are pointed out and recommendations asto how to solve them are made. / <p>QC 20170227</p>
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Synthesis and functionalization of gallium nitride nanostructures for gas sensing and catalyst supportKente, Thobeka 10 January 2014 (has links)
A thesis submitted to the Faculty of Science, University of the Witwatersrand,
Johannesburg, in fulfilment of the requirements for the degree of Doctor of
Philosophy. October 2013.
Johannesburg, South Africa. / We report the role of a double step heat treatment process in the synthesis of
novel GaN nanostructures (NSs) using a two stage furnace following a catalyst
free vapour-solid growth mechanism. Morphological analysis revealed that GaN
NSs were composed of rod-like structures with average diameter of 250 nm and
accumulated particulates of GaN with diameter of ~ 12 – 16 nm providing
enhanced surface area. The wurtzite phase of GaN nanorods of agglomerated
nanoclusters was synthesized at temperatures as low as 750 °C. An X-ray
photoelectron spectroscopic study confirmed formation of GaN. The surface areas
of the GaN NSs were high at ~20 m2/g with respect to that expected for solid
nanorod structures. The GaN NSs were of high crystallinity and purity as revealed
by structural studies. Raman spectral analysis showed stronger intensity of the
A1(LO) mode with respect to that for E2(high) mode indicating the high electronic
quality of the sample. A photoluminescence study revealed the dominant presence
of a defect band around 1.7-2.1 eV corresponding to nitrogen di-vacancies.
Subsequent annealing in NH3 has demonstrated a compensation of the defect state
and evolution of a band edge peak with possible hydrogen compensation of
surface states.
We also report the role of activated carbon on Ga2O3 to make GaN/C
nanostructure composites using a single stage furnace. TEM analysis showed that
GaN/C nanostructures gave different morphologies with different ratios of
GaN/C. The surface areas of these materials showed an increase as the ratio of
activated carbon was increased. PXRD showed that a ratio of Ga2O3: C of 1:0.5
(w/w) was sufficient to form GaN. TGA revealed that the ratios of Ga2O3: C of
1:0.5 – 1:2 gave materials that were thermally stable. Raman spectra showed that
the material had excellent electronic properties. The material with a Ga2O3/C 1:2
ratios showed a poor gas response due to the change in reference value of
resistance with the variation of hydrogen concentration.
iv
This study also provides the first investigation of GaN as a catalyst support in
hydrogenation reactions. The GaN NSs were synthesized via chemical vapour
deposition (CVD) in a double stage furnace (750 ºC) while nitrogen doped carbon
spheres (NCSs) were made by CVD in a single stage furnace (950 ºC). TEM
analysis revealed that the GaN NSs were rod-like with average diameters of 200
nm, while the NCSs were solid with smoother surfaces, and with diameters of 450
nm. Pd nanoparticles (1 and 3% loadings) were uniformly dispersed on acid
functionalized GaN NSs and NCSs. The Pd nanoparticles had average diameters
that were influenced by the type of support material used. The GaN NSs and
NCSs were tested for the selective hydrogenation of cinnamaldehyde in
isopropanol at 40 and 60 °C under atmospheric pressure. A comparative study of
the activity of the nanostructured materials revealed that the order of catalyst
activity was 3% Pd/GaN >3% Pd/NCSs > 1% Pd/NCSs > 1% Pd/GaN. However,
100% selectivity to hydrocinnamaldehyde (HCALD) was obtained with 1%
Pd/GaN at reasonable conversion rates.
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