The conventional methods for diagnosing pathological conditions of the tympanic membrane (TM) and other abnormalities require measuring its motion while responding to acoustic excitation. Current methodologies for characterizing the motion of the TM are usually limited to either average acoustic estimates (admittance or reflectance) or single-point mobility measurements, neither of which is sufficient to characterize the detailed mechanical response of the TM to sound. Furthermore, while acoustic and single-point measurements are useful for the diagnosis of some middle ear disorders, they are not useful in others. Measurements of the motion of the entire TM surface can provide more information than these other techniques and may be superior for the diagnosis of pathology. In this Thesis, the development of an optoelectronic holographic otoscope (OEHO) system for characterization of nanometer scale motions in TMs is presented. The OEHO system can provide full-field-of-view information of the sound-induced displacements of the entire surface of the TM at video rates, allowing rapid quantitative analysis of the mechanical response of normal or pathological TMs. Preliminary measurements of TM motion in cadaveric animals helped constrain the optical design parameters for the OEHO, including the following: image contrast, resolution, depth of field (DOF), laser power, working distance between the interferometer and TM, magnification, and field of view (FOV). Specialized imaging software was used in selecting and synthesizing the various components. Several prototypes were constructed and characterized. The present configuration has a resolution of 57.0 line pairs/mm, DOF of 5 mm, FOV of 10 ´ 10 mm2, and a 473 nm laser with illumination power of 15 mW. The OEHO system includes a computer controlled digital camera, a fiber optic subsystem for transmission and modulation of laser light, and an optomechanical system for illumination and observation of the TM. The OEHO system is capable of operating in two modes. A 'time-averaged' mode, processed at video rates, was used to characterize the frequency dependence of TM displacements as tone frequency was swept from 500 Hz to 25 kHz. A 'double-exposure' mode was used at selected frequencies to measure, in full-field-of-view, displacements of the TM surface with nanometer resolution. The OEHO system has been designed, fabricated, and evaluated, and is currently being evaluated in a medical-research environment to address basic science questions regarding TM function. Representative time-averaged holographic and stroboscopic interferometry results in post-mortem and live samples are herein shown, and the potential utilization discussed.

Graphene has emerged as an appealing material for a variety of optoelectronic applications due to its unique electrical and optical characteristics. In this thesis, I will present recent advances in integrating graphene and graphene-boron nitride (BN) heterostructures with confined optical architectures, e.g. planar photonic crystal (PPC) nanocavities and silicon channel waveguides, to make this otherwise weakly absorbing material optically opaque. Based on these integrations, I will further demonstrate the resulting chip-integrated optoelectronic devices for optical interconnects. After transferring a layer of graphene onto PPC nanocavities, spectral selectivity at the resonance frequency and orders-of-magnitude enhancement of optical coupling with graphene have been observed in infrared spectrum. By applying electrostatic potential to graphene, electro-optic modulation of the cavity reflection is possible with contrast in excess of 10 dB. And furthermore, a novel and complex modulator device structure based on the cavity-coupled and BN-encapsulated dual-layer graphene capacitor is demonstrated to operate at a speed of 1.2 GHz. On the other hand, an enhanced broad-spectrum light-graphene interaction coupled with silicon channel waveguides is also demonstrated with ∼0.1 dB/μm transmission attenuation due to graphene absorption. A waveguide-integrated graphene photodetector is fabricated and shown 0.1 A/W photoresponsivity and 20 GHz operation speed. An improved version of a similar photodetector using graphene-BN heterostructure exhibits 0.36 A/W photoresponsivity and 42 GHz response speed. The integration of graphene and graphene-BN heterostructures with nanophotonic architectures promises a new generation of compact, energy-efficient, high-speed optoelectronic device concepts for on-chip optical communications that are not yet feasible or very difficult to realize using traditional bulk semiconductors.

No description available.

Novel organic conjugated materials have led to new technologies in the field of flexible electronics, with applications in the area of sensors, field effect transistors, or photovoltaic devices. Several material parameters and properties come into play in these devices, including energy of the frontier molecular orbitals, thin film morphology, and charge transport. These properties can be controlled by the chemistry of organic materials, and through processing conditions. In particular, this dissertation focuses on the isoindigo unit as an electron deficient unit to tune polymer light absorption, charge separation, charge transport in the first part of this dissertation, and morphology control in organic photovoltaic (OPV) devices in a subsequent section. The first part of this dissertation introduces the synthesis and properties of isoindigo-containing polymers as n-type, p-type, or ambipolar semiconductors, and their application in all-polymer or polymer:fullerene blends OPV active layers. It is found that polymers with phenyl linkages along the backbone tend to have broader light absorption than polymers with alternating phenyl-thiophene rings; however, steric hindrance in the former leads to low charge mobilities, and poor device performance. In addition, this section highlights the importance of controlling phase separation in OPV devices by focusing on all-polymer blends, which show large phase separation, and polymer:fullerene blends, where the morphology can be controlled through processing additives generating a two-fold increase in device efficiency. Looking at poly(oligothiophene-isoindigo) polymers as model systems, emphasis is placed on photovoltage losses in these devices due to a decrease in effective energy gap between the polymers and fullerene as the oligothiophene donating strength is increased, as well as explanation of the device parameters through description of morphology as solubility is varied. The second portion of this dissertation focuses on solution properties of polymers and their correlation to thin film morphology. A first study investigates the influence of alkyl side chains on solubility, molecular packing, and phase separation in blends of poly(terthiophene-alt-isoindigo) with fullerenes. Specifically, as side chains are lengthened, solubility is increased, but with limited impact on the blends morphology. On the other hand increased backbone torsion leads to variations in energy levels, polymer packing and large phase separation in blends with fullerenes. These thermodynamic parameters are to put in perspective with the kinetic control of film formation during the coating process. This is discussed in a second study, which looks at the mechanism of thin film formation when processing additives are used. In particular, this study highlights the interactions that provide a driving force for polymer crystallite formation, depending on the mechanism followed when aliphatic and aromatic additives are used. These observations are then used to predict the morphology in spin-coated thin films.

published_or_final_version / abstract / Chemistry / Doctoral / Doctor of Philosophy

Si nanoparticles are new prospective optoelectronic materials. Unlike bulk Si cry-stals, Si nanoparticles display intriguing room-temperature photoluminescence. A major challenge in the fabrication of Si nanoparticles is the control of their size distribution. The rare-earth element Er has unique photo emission properties, including low pumping power, and a temperature independent, sharp spectrum. The emission wavelength matches the transmission window of optical fibers used in the telecommunications industry. Therefore, the study of Er-doped Si nanoparticles may have practical significance. The goals of the research described in this dissertation are to investigate vapor phase pyrolysis methods and to characterize the microstructure and associated defects, particles size distributions and photoluminescence efficiencies of doped and undoped Si nanoparticles using analytical transmission electron microscopy, high resolution electron microscopy, and optical spectroscopy. Er-doped and undoped Si nanoparticles were synthesized via vapor-phase pyrolysis of disilane at Texas Christian University. To achieve monodisperse size distributions, a process with fast nucleation and slow growth was employed. Disilane was diluted to 0.48% with helium. A horizontal pyrolysis oven was maintained at a temperature of 1000 °C. The oven length was varied from 1.5 cm to 6.0 cm to investigate the influence of oven length on the properties of the nanoparticles. The Si nanoparticles were collected in ethylene-glycol. The doped and undoped Si nanoparticles have a Si diamond cubic crystal structure. Neither Er precipitation, Er oxides or Er silicides were detected in any of the samples. The Er dopant concentration was about 2 atom% for doped samples from the 3.0 and 6.0 cm ovens as determined by quantitative analysis using X-ray energy dispersive spectroscopy. The average Si nanoparticle size increases from 11.3 to 15.2 nm in the doped samples and from 11.1 to 15.7 nm in the undoped samples as the oven length increases from 1.5 to 6.0 cm. HREM data show that average Si nanocrystallite size varies from 6.4 to 3.3 to 5.9 nm in the doped samples, and from 7.5 to 12.2 nm in the undoped samples as the oven length increases. Room-temperature Er photoluminescence has been detected near 1.54 :m from all doped samples. Saturation of the Er photoluminescence intensity at large emission power and the monotonic decrease of the intensity as a function of the emission wavelength in the doped sample from the 3.0 cm oven suggest that a carrier-mediated energy transfer process occurs in the Er-doped Si nanoparticles. It is the first time to successfully fabricate and investigate Er-doped Si nanoparticles.

This thesis explores the expansive world of General Relativity, and its role to play in modern cosmology and quantum field theory. We begin with a pedagogical approach to relativity, in particular, highlighting upon the ambiguity that arises with the conventions used in different textbooks. A brief introduction to tensor calculus has also been provided in the appendix. The preliminary chapters are also complimented with examples of numerical relativity via simulation. We then move on to discuss examples of non-linear systems, and their exact solutions. Such systems will be analogous to those we shall encounter later, upon considering scalar field theories as a means of modelling dark energy. We shall introduce the axion as our highly motivated dark matter candidate, since this will ultimately determine the behaviour of the scalar field. Coupled to a scaling factor across the spatial domain, it is found that this scalar field will ultimately determine the evolution of our universe. The key result of this thesis has been the possibility to screen both the cosmological constant, and flatness of the universe, to within observable parameters. These results will be explicitly derived from first principles. Also included is a tentative approach to holographic theory, in which strongly correlated systems may be modelled within the asymptotic domain of Anti-de Sitter (AdS) space. Ultimately, our aspirations are to bridge the gap with condensed matter theory, in particular with the publications included within the latter appendices. These publications discuss graphene as a revolutionary new material, for inclusion in both transistor-based and optoelectronic devices.

by Hiu-suen Choy. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references (leaves [124]-131). / Acknowledgements / Abstract / Chapter Chapter 1 --- Introduction --- p.1-1 / Chapter Chapter 2 --- Basic Theory for MSM Photodetectors --- p.2-1 / Chapter 2.1 --- Schottky-Mott Theory for Ideal metal-Semiconductor Contact --- p.2-1 / Chapter 2.2 --- Modifications to Schottky-Mott Theory for Practical Metal Semiconductor Contact --- p.2-4 / Chapter 2.3 --- Energy Band of Metal-semiconductor-metal (MSM) Structures --- p.2-6 / Chapter 2.4 --- Dark Current Voltage Characteristics for MSM Structure --- p.2-12 / Chapter 2.5 --- Capacitance for Interdigitated MSM Photodetectors --- p.2-16 / Chapter 2.6 --- Basic mechanism of the MSM Photodetector --- p.2-19 / Chapter 2.7 --- DC Responsity and Quantum Efficiency of the Interdigitated MSM Photodetector --- p.2-20 / Chapter 2.8 --- Speed Performance of the Interdigitated MSM Photodetector --- p.2-21 / Chapter Chapter 3 --- Device Fabrication and Packaging --- p.3-1 / Chapter 3.1 --- Metallization Pattern --- p.3-1 / Chapter 3.2 --- Device Fabrication --- p.3-7 / Chapter 3.3 --- Device Packaging --- p.3-8 / Chapter Chapter 4 --- Experimental Description --- p.4-1 / Chapter 4.1 --- Experimental Procedures --- p.4-1 / Chapter 4.2 --- Equipment Description --- p.4-3 / Chapter Chapter 5 --- 1.3μm In0.53Ga0.47As Metal-Semiconductor-Metal Photodetector Grown by Low-Pressure MOCVD Using Tertiarybutylarsine --- p.5-1 / Chapter 5.1 --- General Description --- p.5-1 / Chapter 5.2 --- Structure of the Photodetector --- p.5-2 / Chapter 5.3 --- Experimental Results --- p.5-6 / Chapter 5.4 --- Data Analysis and Discussion --- p.5-14 / Chapter 5.5 --- Summary --- p.5-24 / Chapter Chapter 6 --- The Performance of 0.85μm Semi-Insulated GaAs MSM Photodetector with Different Interdigitated Spacings --- p.6-1 / Chapter 6.1 --- General Description --- p.6-1 / Chapter 6.2 --- Experimental Results --- p.6-2 / Chapter 6.3 --- Data Analysis and Discussion --- p.6-17 / Chapter 6.4 --- Summary --- p.6-27 / Chapter Chapter 7 --- Optical Control of Polarity in Short Electrical Pulses Generated from Coplanar Waveguide MSM Photodetectors --- p.7-1 / Chapter 7.1 --- General Description --- p.7-1 / Chapter 7.2 --- "Structure, Fabrication and Experimental Set-up" --- p.7-1 / Chapter 7.3 --- Experimental Results --- p.7-4 / Chapter 7.4 --- Data Analysis and Discussion --- p.7-11 / Chapter 7.5 --- Applications --- p.7-18 / Chapter Chapter 8 --- Conclusion --- p.8-1 / References / Publications

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1981. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Includes bibliographical references. / by Arthur Douglas Fisher. / Ph.D.

Semiconductor devices based on III-V materials have been the focus of intense research due to their superior electron mobility and favorable energy direct bandgap which are applicable in infrared wavelength range optoelectronics and high speed electronic systems. The thesis presented here consists of two thrusts; the first focusing on infrared applications, and the second focusing on InP-based heterojunction bipolar transistors (HBTs). In the first thrust, we investigate type-II InAs/GaSb superlattice IR detector devices and the effect of substrate orientation on InSb and InAs nanostructure morphology. In the second thrust, we study InP-based high frequency HBTs. A low resistance InAs ohmic contact is demonstrated, and we presented along with a study of the crystalline qualities in GaAs0.5Sb0.5 films grown on tilted- axis InP substrates. Chapter 2 presents fabrication and characterization of two type-II superlattice structures with 15 monolayer (ML) InAs/12ML GaSb and 17ML InAs/7ML GaSb grown on GaSb (100) substrates by solid-source molecular beam epitaxy (MBE). The X-ray diffraction (XRD) measurements of both the 15ML InAs/12ML GaSb and 17MLInAs/7ML GaSb superlattices indicated excellent material and interface qualities. The cutoff wavelengths of 15ML InAs/12ML GaSb and 17ML InAs/7ML GaSb superlattices photodetectors were measured to be 6.6μm and 10.2μm, respectively. These different spectral ranges were achieved by growing alternating layers of varying thicknesses which allowed for bandgap engineering of the superlattices of InAs and GaSb. Lastly, a mid-IR type-II superlattice photodiode was demonstrated at 80K with a cutoff wavelength at 6.6µm. The device exhibited a near background limited performance (BLIP) detectivity at 80K and higher temperature operation up to 280K. In Chapter 3, we show that the (411) orientation, though not a naturally occurring surface, is a favorable orientation to develop a buffer layer into a super flat surface at a certain high growth temperature. The (411) surface is a combination of localized (311) and (511) surfaces but at a high growth temperature, adatoms can obtain enough energy to overcome the energy barrier between these localized (311) and (511) surfaces and form a uniform (411) surface with potential minima. This results in a super flat surface which is promising for high-density nanostructure growth. In this work, this is the first time that the highest InSb and InAs nanostructures density can be achieved on the (411) surface which is in comparison with the (100), (311), and (511) surfaces. Chapter 4 of this thesis addresses the use of an InAs layer as a low-resistance ohmic contact to InP-based heterostructure devices. Selective area crystal growth of InAs on a dielectric (Benzocyclobutene, BCB polymer) covered InP (100) substrate and direct growth of InAs on InP substrate were performed by MBE. Heavy doping of InAs using Te was carried out to determine the lowest sheet resistance. Based on scanning electron microscope (SEM) and XRD measurements, increasing substrate temperature from 210 ℃ to 350 ℃, led to an improvement in crystallinity from a polycrystalline layer to a single crystal layer with a corresponding improvement of surface morphology. Moreover, a narrow X-ray diffraction peak indicated full-relaxation of the inherent 3.3% lattice-mismatch in InAs/InP layers. Furthermore, around 290 ℃ a tradeoff was reached between crystallinity and optimized dopant incorporation of Te into InAs for the lowest sheet resistance. Lastly, Chapter 5 discusses the effect of substrate tilting on the material properties of MBE grown GaAsSb alloys closely lattice-matched to an InP substrate. InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth; then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution XRD, photoluminescence (PL) and transmission-line measurements (TLM). Substrate tilting improved the crystalline quality of the GaAsSb alloys, as shown by a narrower XRD linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt.